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公开(公告)号：US20040233964A1
公开(公告)日：2004-11-25
申请号：US10769995
申请日：2004-02-03
发明人： Fusao Yamanaka , Yoji Okazaki , Chiaki Goto , Shinichi Shimotsu
IPC分类号： H01S003/08
CPC分类号： G02B19/0057 , G02B19/0014 , G02B19/0028 , G02B19/009 , G02B27/0961 , H01S5/005 , H01S5/02284 , H01S5/4012 , H01S5/4031
摘要： Laser beams are synthesized by offsetting in different positions in the direction of the fast axis beam bundles radiated from semiconductor lasers, converging the optical axes of the beam bundles in the fast axis view, and introducing the beam bundles into an optical fiber after converging them in the directions of the fast and slow axes. A convergent angle transforming optical system is disposed further upstream of the upstream-most position in the positions where the optical axes of the beam bundles converged in the fast axis view intersect in the fast axis view. The whole beam bundle formed of the beam bundles converged in the fast axis view is passed through the convergent angle transforming optical system so that the angle of convergence of the whole beam bundle or part of the beam bundles is made smaller in the fast axis view, and introduced into the optical fiber.
摘要翻译： 激光束通过在从半导体激光器辐射的快轴束束的方向上的不同位置偏移来合成，将束束的光轴在快轴视图中聚焦，并且将束束在将它们聚集在光纤中后将其引入光纤中 快轴和慢轴的方向。 会聚角度变换光学系统被设置在光束束的光轴会聚在快轴轴线中的快速轴视图中相交的位置处的最上游位置的更上游。 聚焦在快轴视图中的束束形成的整束束束通过会聚角变换光学系统，使得整个束束或束束的一部分的会聚角度在快轴视图中变小， 并引入到光纤中。
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公开(公告)号：US20040240489A1
公开(公告)日：2004-12-02
申请号：US10857547
申请日：2004-06-01
发明人： Yuichi Teramura , Fusao Yamanaka , Yoji Okazaki
IPC分类号： H01S003/30
CPC分类号： G03F7/70216 , G02B6/08 , G02B19/0014 , G02B19/0057 , G02B27/0994 , G03F7/70025 , H01S5/005 , H01S5/02216 , H01S5/02284 , H01S5/02292 , H01S5/4012 , H01S5/4025
摘要： In a laser module, a laser beam which is emitted from a laser element is focused by a condensing optical system and caused to enter an incidence end of an optical fiber. A laser device is provided with a plurality of these laser modules. Emission end portions of the optical fibers are bundled to form a laser emission portion. A thickness of cladding h of each optical fiber is set to a value calculated in accordance with the following equation: 1 cladding thickness null null null h null ( emission null null null light null null null amount of null null null one null null null laser null null null module null null null W required intensity null null null C null packing ratio null null null P - core diameter null null null t ) null 2 As a result, it is possible to emit a laser-beam with a high intensity that is required for functionality as a laser light source, for the purpose of raising resolution of an exposure apparatus.
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3.发明申请Semiconductor laser device containing controlled interface oxygen at both end facets 有权半导体激光器件在两个端面均含有受控界面氧公开(公告)号：US20030048823A1
公开(公告)日：2003-03-13
申请号：US10232525
申请日：2002-09-03
发明人： Fusao Yamanaka
IPC分类号： H01S005/00
CPC分类号： H01S5/028 , H01S5/0282
摘要： In a semiconductor laser device: a multilayer structure including a plurality of semiconductor layers is formed on a substrate; and at least one dielectric layer is formed on each of two end facets of the multilayer structure, where the at least one dielectric layer on each of the two end facets includes a reflectance control layer. In addition, at least one portion of the multilayer structure in at least one vicinity of at least one of the two end facets contains 10 to 1,500 times more oxygen than the other portions of the multilayer structure.
摘要翻译： 在半导体激光装置中，在基板上形成包括多个半导体层的多层结构体， 并且至少一个电介质层形成在所述多层结构的两个端面中的每一个上，其中所述两个端面中的每一个上的所述至少一个电介质层包括反射控制层。 此外，至少在两个端面中的至少一个附近的多层结构的至少一部分含有比多层结构的其它部分多10至1500倍的氧。
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4.发明申请Laser apparatus having protection member at light-emission end of multimode optical fiber 有权具有多模光纤的发光端的保护部件的激光装置公开(公告)号：US20040096159A1
公开(公告)日：2004-05-20
申请号：US10670473
申请日：2003-09-26
IPC分类号： G02B006/26 , G02B006/42
CPC分类号： G02B6/4201 , G02B6/4206 , G02B6/424 , G02B6/4249 , G02B6/4254 , G02B6/4257 , G02B6/4273
摘要： In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.
摘要翻译： 在激光装置中，多个半导体激光元件分别发射激光束; 多模光纤具有光入射端和发光端; 聚光系统收集从多个半导体激光元件发射的激光束，并将收集的激光束耦合到多模光纤的光入射端; 并且在多模光纤的发光端设置保护部件，将发光端保护于大气，并且具有位于与发光端至少预定距离的发光窗口。
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5.发明申请Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward from shortest current path between end facets of cladding layers 有权半导体激光器件，其中电光转换层的端部从包覆层的端面之间的最短电流路径向外突出公开(公告)号：US20020196829A1
公开(公告)日：2002-12-26
申请号：US10175456
申请日：2002-06-20
发明人： Fusao Yamanaka
IPC分类号： H01S005/00
CPC分类号： H01S5/1082 , H01S5/0283 , H01S5/16
摘要： A semiconductor laser device constituted by a stack of semiconductor layers formed on a substrate. The semiconductor layers include a first cladding layer of a first conductive type, an electric-to-optical conversion layer, and a second cladding layer of a second conductive type, formed in this order. In the semiconductor laser device, resonator surfaces are formed at opposite ends of the stack, and the end facet of the electric-to-optical conversion layer at each of at least one of the opposite ends of the stack protrudes outward from the shortest current path between the end facets of the first cladding layer and the second cladding layer at the end of the stack through semiconductor layers located between the first cladding layer and the second cladding layer.
摘要翻译： 一种半导体激光器件，由在衬底上形成的一叠半导体层构成。 半导体层包括依次形成的第一导电类型的第一包层，电 - 光转换层和第二导电类型的第二包覆层。 在半导体激光器件中，谐振器表面形成在堆叠的相对端，并且电堆的相对端中的至少一个的电 - 光转换层的端面从最短电流路径向外突出 通过位于第一包层和第二包层之间的半导体层，在堆叠端部的第一包层的端面与第二包层之间。
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公开(公告)号：US20030214987A1
公开(公告)日：2003-11-20
申请号：US10405931
申请日：2003-04-03
IPC分类号： H01S003/04 , H01S005/00
CPC分类号： H01S5/4012 , H01L2224/48091 , H01S5/0021 , H01S5/02212 , H01S5/0222 , H01S5/02284 , H01S5/32341 , H01S5/4031 , H01L2924/00014
摘要： In a disclosed laser module, a usage amount of organic adhesive is set to no more than 1.0 g/ml. Thus, an equilibrium density of outgas components from the adhesive after an air removal treatment is less than 1000 ppm. In another laser module, a heat sink at which a semiconductor laser element is adhered on a submount, an electrode terminal wire-connected with the laser element, a photodiode wire-connected with the electrode terminal, and a zeolite adsorbent are fixedly provided on a stem. These are ring-welded in a container in a dry air atmosphere (80% nitrogen, 20% oxygen). In still another laser module, sixteen multiplexed lasers are disposed in a container. The container is connected with an air circulation apparatus, which is provided with a filter for removing contaminants, a rotary pump for circulating inert gas, and a valve for controlling replenishment of the gas.
摘要翻译： 在公开的激光模块中，将有机粘合剂的使用量设定为不超过1.0g / ml。 因此，除气处理后的粘合剂的气体组分的平衡密度小于1000ppm。 在另一激光模块中，将半导体激光元件粘附在基座上的散热器，与激光元件连接的电极端子，与电极端子连接的光电二极管和沸石吸附剂固定地设置在 干。 它们在干燥空气气氛（80％氮气，20％氧气）中在容器中环焊。 在另一个激光模块中，十六个复用激光器设置在容器中。 容器与具有用于除去污染物的过滤器，用于循环惰性气体的旋转泵和用于控制气体补充的阀的空气循环装置连接。
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7.发明申请Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer 有权具有端面保护层的半导体激光元件，其包括通过氧化或氮化第一子层的表面而形成的端面上形成的未氧化或无氮化的第一子层和第二子层公开(公告)号：US20030123506A1
公开(公告)日：2003-07-03
申请号：US10322599
申请日：2002-12-19
发明人： Fusao Yamanaka
IPC分类号： H01S005/00
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/22
摘要： A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d2 of the second sublayer and the total thickness d1 of the first and second sublayers satisfy a relationship, 0.1nulld2/d1null0.9.
摘要翻译： 半导体激光元件包括：具有谐振器面的层叠; 以及形成在所述谐振器面中的至少一个上的至少一个保护层。 所述至少一个保护层中的每一个包括至少第一，第二和第三子层。 所述第一子层在所述至少第一，第二和第三子层中形成为最靠近所述堆叠，并且由不含氧（或氮）作为构成元素的材料制成。 第二子层由通过氧化（或氮化）第一子层的一部分而产生的氧化物（或氮化物）制成。 所述第三子层在所述至少第一，第二和第三子层中形成为离堆叠最远，并且由氧化物（或氮化物）制成。 第二子层的厚度d2和第一和第二子层的总厚度d1满足0.1 <= d2 / d1 <= 0.9的关系。
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8.发明申请Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 有权在谐振器端面附近具有电流非注入区域的半导体激光器件及其制造方法公开(公告)号：US20020061044A1
公开(公告)日：2002-05-23
申请号：US09973814
申请日：2001-10-11
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/2203 , H01S5/3434
摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A Sio2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the Sio2 film other than the device perimeter.
摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。 在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。 然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。 接下来，剥离光致抗蚀剂。 在整个表面上形成Sio2膜。 在对应于脊部的SiO 2膜的一部分形成窗口之后，在除了器件周边以外的Sio2膜的区域上形成p电极。
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公开(公告)号：US20040252388A1
公开(公告)日：2004-12-16
申请号：US10767457
申请日：2004-01-30
发明人： Fusao Yamanaka , Yoji Okazaki , Chiaki Goto
IPC分类号： G02B005/04
CPC分类号： G02B19/0057 , G02B19/0028 , G02B27/0905
摘要： In a laser light multiplexing apparatus: a collimating optical system collimates light beams emitted from semiconductor lasers so that the slow axes of the light beams become coplanar, and optical axes of the light beams become parallel to each other; a light beam rearrangement optical system constituted by prisms respectively arranged in correspondence with the light beams rearranges the light beams in such a manner that directions of the fast axes of the light beams are changed at different locations along a direction in which the light beams propagate, and the fast axes of the light beams become coplanar; and a convergence optical system converges a bundle of the light beams rearranged by the light beam rearrangement optical system, in directions of the fast axes and the slow axes of the light beams, and makes the converged bundle of the light beams enter an optical fiber.
摘要翻译： 在激光多路复用装置中：准直光学系统对从半导体激光器发出的光束进行准直，使得光束的慢轴变得共面，并且光束的光轴彼此平行; 由与光束对应地分别配置的棱镜构成的光束重排光学系统以沿着光束传播方向的不同位置改变光束的快轴方向的方式重新排列光束， 光束的快轴变为共面; 会聚光学系统在由光束重排光学系统重新排列的光束在光束的快轴和慢轴方向上收敛，并使光束的会聚光束进入光纤。
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10.发明申请Laser element, method of producing the laser element, and a laser module employing the laser element 有权激光元件，激光元件的制造方法以及使用该激光元件的激光模块公开(公告)号：US20040184493A1
公开(公告)日：2004-09-23
申请号：US10766808
申请日：2004-01-30
发明人： Fusao Yamanaka , Teruhiko Kuramachi
IPC分类号： H01S003/04
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/005 , H01S5/0213 , H01S5/02252 , H01S5/02272 , H01S5/02284 , H01S5/02469 , H01S5/3202 , H01S5/3216 , H01S5/32341 , H01S5/4012 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.
摘要翻译： 在制造激光元件的方法中，将钎焊材料放置在氮化物系半导体激光棒与散热器的固定面之间，钎焊材料含有金，锡和硅中的一种作为主要成分， 基片半导体激光棒具有形成在基板上的至少三个发光点，散热器由铜或铜合金制成，并且固定面具有预定形状。 然后，利用具有与规定形状对应的形状的工具将氮化物系半导体激光棒按压到散热片，将氮化物系半导体激光棒固定在散热片的固定面上，熔化固化钎焊材料 的固定面。
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