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公开(公告)号：US20240213307A1
公开(公告)日：2024-06-27
申请号：US18427607
申请日：2024-01-30
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA , Akimasa KINOSHITA
IPC: H01L29/06 , H01L21/02 , H01L21/04 , H01L29/16 , H01L29/423
CPC classification number: H01L29/06 , H01L21/02378 , H01L21/02529 , H01L21/046 , H01L29/1608 , H01L29/4236
Abstract: A p-type impurity concentration profile in a depth direction of a p-type base region is adjusted by two or more stages of ion implantation to the p-type base region. The two or more stages of ion implantation are each set to have a mutually different acceleration voltage and a dose amount that is lower the higher is the acceleration voltage. The p-type impurity concentration profile is asymmetrical about a depth position of a highest impurity concentration and the impurity concentration decreases from this depth position in a direction to n+-type source regions and in a direction to an n+-type drain region. In the p-type impurity concentration profile, the impurity concentration decreases, forming a step at one or more different depth positions closer to the n+-type drain region than is the depth position of the highest impurity.
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公开(公告)号：US20240304673A1
公开(公告)日：2024-09-12
申请号：US18426507
申请日：2024-01-30
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA
IPC: H01L29/16 , H01L23/528 , H01L29/78
CPC classification number: H01L29/1608 , H01L23/528 , H01L29/7811
Abstract: A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type; a semiconductor region of a second conductivity-type provided on a top surface side of the drift layer in an intermediate part between an active part and an edge termination part; a first insulating film provided on a top surface of the semiconductor region; a wiring layer provided on a top surface of the first insulating film; a second insulating film provided on a top surface of the wiring layer; and a gate pad provided on a top surface of the second insulating film so as to be electrically connected to the wiring layer, wherein the semiconductor region includes a first region having a 4H structure overlapping with at least a part of the wiring layer in a depth direction, and a second region having a 3C structure provided on a top surface side of the first region.
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公开(公告)号：US20180286445A1
公开(公告)日：2018-10-04
申请号：US15994470
申请日：2018-05-31
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA , Hitoshi NAKATA , Takehito SHIMATSU
Abstract: The invention provides a magnetic recording medium including a magnetic layer or a magnetic recording layer having a granular structure in which magnetic crystal grains are well separated from each other. The magnetic recording medium includes a substrate, a seed layer, and a magnetic recording layer, wherein the magnetic recording layer includes a first magnetic layer which is a continuous film consisting of an ordered alloy, and a second magnetic layer having a granular structure consisting of magnetic crystal grains consisting of an ordered alloy and a non-magnetic crystal grain boundary, and the seed layer consists of a material selected from the group consisting of an NaCl-type compound, a spinel-type compound, and a perovskite-type compound.
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公开(公告)号：US20220320268A1
公开(公告)日：2022-10-06
申请号：US17587753
申请日：2022-01-28
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA
Abstract: A semiconductor device includes n-type drift layer, n-type current spreading layer having higher impurity concentration than the drift layer, p-type base region provided on top surface, p-type gate-bottom protection region located in the current spreading layer, having first bottom edge portion formed of curved surface, p-type base-bottom embedded region in contact with bottom surface of the base region, having second bottom edge portion formed of curved surface on side surface facing the gate-bottom protection region, being separated from the gate-bottom protection region, and insulated gate electrode structure provided in trench penetrating through the base region to reach the gate-bottom protection region. Bottom surface of the base-bottom embedded region is deeper than bottom surface of the gate-bottom protection region, and minimum value of curvature radius of the first bottom edge portion is larger than minimum value of curvature radius of the second bottom edge portion.
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公开(公告)号：US20180122416A1
公开(公告)日：2018-05-03
申请号：US15857593
申请日：2017-12-28
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Shinji UCHIDA , Hitoshi NAKATA , Tomohiro MORIYA , Akira FURUTA , Hirohisa OYAMA , Takehito SHIMATSU
CPC classification number: G11B5/732 , G11B5/7325 , G11B5/8404 , G11B5/851
Abstract: A magnetic recording medium is provided that includes, in the order recited, a substrate; a first seed layer; a second seed layer containing ZnO; a third seed layer containing MgO; and a magnetic recording layer containing an ordered alloy. The first seed layer contains Ru and at least one material selected from the group consisting of oxides, carbides, and nitrides. Employing seed layers enables the magnetic recording medium to be a perpendicular magnetic recording medium by having the magnetic recording layer contain an ordered alloy suitable for perpendicular magnetic recording. Recording density is improved thereby while ensuring required thermal stability. Further, the invention achieves an increased thickness of the magnetic layer and a reduced grain size.
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Patent Agency Ranking
公开(公告)号：US20180122415A1
公开(公告)日：2018-05-03
申请号：US15856036
申请日：2017-12-27
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Shinji UCHIDA , Hitoshi NAKATA , Tomohiro MORIYA , Akira FURUTA , Takehito SHIMATSU
CPC classification number: G11B5/7379 , C03C17/3605 , C03C17/3639 , C03C17/3642 , C03C17/3649 , C03C2217/216 , C03C2217/228 , C03C2217/252 , C03C2217/254 , C03C2217/258 , C03C2217/259 , C03C2217/261 , C03C2218/156 , G11B5/65 , G11B5/653 , G11B5/7325
Abstract: The purpose of the present invention is to provide a perpendicular magnetic recording medium which uses an Ru seed layer having a (002)-oriented hcp structure, and has a magnetic recording layer including a (001)-oriented L10 ordered alloy suitable to perpendicular magnetic recording. The magnetic recording medium of the present invention includes a substrate, a first seed layer containing Ru, a second seed layer containing ZnO, a third seed layer containing MgO, and a magnetic recording layer containing an ordered alloy, in this order, the first seed layer having the (002)-oriented hexagonal closest packed structure.
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公开(公告)号：US20240021723A1
公开(公告)日：2024-01-18
申请号：US18475675
申请日：2023-09-27
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA
CPC classification number: H01L29/7811 , H01L29/1608 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/7813 , H01L29/66068
Abstract: In an intermediate region between an active region and an edge termination region, on a front surface of a semiconductor substrate, a gate polysilicon wiring layer is provided via an insulating layer in which a gate insulating film and a field oxide film are stacked sequentially. An inner peripheral end of the field oxide film is positioned directly beneath the gate polysilicon wiring layer, which extends inward from the field oxide film and terminates on the gate insulating film. At the surface of the insulating layer directly beneath the gate polysilicon wiring layer, on the inner peripheral end of the field oxide film, a drop is formed by a difference in thickness due to whether the field oxide film is present. A distance from the drop to a contact hole of the active region is 21 μm or less.
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公开(公告)号：US20220344455A1
公开(公告)日：2022-10-27
申请号：US17682687
申请日：2022-02-28
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Yasuyuki HOSHI , Tomohiro MORIYA
Abstract: A FLR structure is provided in an edge termination region as a voltage withstanding structure. The FLR structure is configured by multiple FLRs that concentrically surround a periphery of an active region. An impurity concentration of the FLRs is less than 1×1018/cm3 or preferably, may be in a range of 3×1017/cm3 to 9×1017/cm3. A thickness of each of the FLRs is in a range of 0.7 μm to 1.1 μm. A first interval between an innermost FLR and an outer peripheral pt-type region is at most about 1.2 μm.
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公开(公告)号：US20160225394A1
公开(公告)日：2016-08-04
申请号：US15093956
申请日：2016-04-08
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA , Hitoshi NAKATA , Hiroto KIKUCHI , Hiroyasu KATAOKA , Akira FURUTA , Takehito SHIMATSU
IPC: G11B5/65
Abstract: The present invention provides a magnetic recording layer that has a high magnetic anisotropy constant Ku and a low Curie temperature Tc, as well as a magnetic recording medium that incorporates such a magnetic recording layer. The magnetic recording medium of the present invention includes a nonmagnetic substrate and a magnetic recording layer containing an ordered alloy. The ordered alloy may contain at least one element selected from the group consisting of Fe and Ni; at least one element selected from the group consisting of Pt, Pd, Au, Rh and Ir; and Ru.
Abstract translation: 本发明提供具有高磁各向异性常数Ku和低居里温度Tc的磁记录层以及包含这种磁记录层的磁记录介质。 本发明的磁记录介质包括非磁性基片和含有有序合金的磁记录层。 有序合金可以含有选自Fe和Ni中的至少一种元素; 选自Pt，Pd，Au，Rh和Ir中的至少一种元素; 和汝。
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公开(公告)号：US20150004437A1
公开(公告)日：2015-01-01
申请号：US14488267
申请日：2014-09-16
Applicant: FUJI ELECTRIC CO., LTD.
Inventor： Tomohiro MORIYA
Abstract: A magnetic recording medium having a thick magnetic recording layer of excellent magnetic characteristics is provided. The magnetic recording medium includes a non-magnetic substrate and a magnetic recording layer. The magnetic recording layer includes a plurality of first magnetic recording layers located at odd-numbered positions from the non-magnetic substrate, and one or more second magnetic recording layers located at even-numbered positions from the non-magnetic substrate. The first magnetic recording layers each have a granular structure that has first magnetic crystal grains with an ordered alloy and a first non-magnetic portion surrounding the first magnetic crystal grains and formed of a material having carbon as main component. The second magnetic recording layers each have a granular structure that has second magnetic crystal grains with an ordered alloy and a second non-magnetic portion surrounding the second magnetic crystal grains and formed of a material different from that of the first non-magnetic portion.
Abstract translation: 提供具有优良磁特性的厚磁记录层的磁记录介质。 磁记录介质包括非磁性基片和磁记录层。 磁记录层包括位于非磁性基板的奇数位置的多个第一磁记录层和位于非磁性基板的偶数位置的一个或多个第二磁记录层。 第一磁记录层各自具有粒状结构，该颗粒结构具有带有有序合金的第一磁性晶粒和围绕第一磁性晶粒的第一非磁性部分，并且由以碳为主要成分的材料形成。 第二磁记录层各自具有粒状结构，其具有带有有序合金的第二磁晶粒和围绕第二磁晶粒的第二非磁性部分，并且由不同于第一非磁性部分的材料形成。
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