公开(公告)号：US20220123112A1

公开(公告)日：2022-04-21

申请号：US17538331

申请日：2021-11-30

Applicant: FUJI ELECTRIC CO., LTD. ,  MITSUBISHI ELECTRIC CORPORATION

Inventor： Takeshi TAWARA ,  Tomonori MIZUSHIMA ,  Shinichiro MATSUNAGA ,  Kensuke TAKENAKA ,  Manabu TAKEI ,  Hidekazu TSUCHIDA ,  Kouichi MURATA ,  Akihiro KOYAMA ,  Koji NAKAYAMA ,  Mitsuru SOMETANI ,  Yoshiyuki YONEZAWA ,  Yuji KIUCHI

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/739

Abstract: A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×1015/cm3.

公开(公告)号：US20240234496A1

公开(公告)日：2024-07-11

申请号：US18399996

申请日：2023-12-29

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Kensuke TAKENAKA ,  Shinsuke HARADA

IPC: H01L29/06 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate of a first conductivity type; forming a first semiconductor layer of a first conductivity type at a surface of the silicon carbide semiconductor substrate, the first semiconductor layer having a first surface and a second surface opposite to each other, the second surface facing the silicon carbide semiconductor substrate; implanting ions of an inert element into a region of a surface layer of the first semiconductor layer, thereby, inducing ion implantation damage to a crystal structure of the region in which a long tail occurs, the surface layer being at the first surface of the first semiconductor layer; and implanting a dopant of a second conductivity type into the surface layer of the first semiconductor layer where the crystal structure is damaged, thereby, forming column regions of the second conductivity type.

公开(公告)号：US20240204051A1

公开(公告)日：2024-06-20

申请号：US18497450

申请日：2023-10-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Kensuke TAKENAKA ,  Takeshi TAWARA ,  Shinsuke HARADA

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/063 ,  H01L21/046 ,  H01L22/14 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: A silicon carbide semiconductor substrate has a silicon carbide semiconductor substrate of a first conductivity type and a first semiconductor layer of the first conductivity type, provided at a front surface of the silicon carbide semiconductor substrate and having a doping concentration lower than that of the silicon carbide semiconductor substrate. A portion of the first semiconductor layer contains a dopant of a second conductivity type. A concentration of the dopant of the second conductivity type in the first semiconductor layer differs in a direction parallel to an orientation flat or in a direction orthogonal to the orientation flat, the orientation flat indicating a crystal axis direction, such that a distribution of a net doping concentration in the first semiconductor layer has a variation equal to or less than a predetermined threshold.

公开(公告)号：US20240347587A1

公开(公告)日：2024-10-17

申请号：US18626461

申请日：2024-04-04

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Kensuke TAKENAKA ,  Takeshi TAWARA ,  Shinsuke HARADA

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/1608 ,  H01L29/66068

Abstract: A superjunction silicon carbide semiconductor device has a silicon carbide semiconductor substrate, a first semiconductor layer of the first conductivity type, a parallel pn region with first column regions of the first conductivity type and second column regions of a second conductivity type disposed therein repeatedly alternating with one another, a second semiconductor layer of the first conductivity type, a third semiconductor layer of the second conductivity type, a first semiconductor region of the first conductivity type, trenches, a second semiconductor region of the second conductivity type, a third semiconductor region of the second conductivity type, gate electrodes, and an electrode. The first column regions and the second column regions contain phosphorus as a dopant.

公开(公告)号：US20220285489A1

公开(公告)日：2022-09-08

申请号：US17685930

申请日：2022-03-03

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Kensuke TAKENAKA ,  Takeshi TAWARA ,  Shinsuke HARADA

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed. In the method of manufacturing the superjunction silicon carbide semiconductor device, forming an epitaxial layer 2a, 2b of a second conductivity type on a front surface of a silicon carbide semiconductor substrate 1 of a first conductivity type and selectively forming semiconductor regions 4a, 4b of the first conductivity type by implanting nitrogen ions in the epitaxial layer are repeated multiple times, thereby forming the parallel pn structure.