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公开(公告)号：US20210034935A1
公开(公告)日：2021-02-04
申请号：US16980324
申请日：2019-03-14
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche
IPC: G06K19/067 , H03H9/02
Abstract: A surface acoustic wave tag device is disclosed, comprising: an acoustic wave propagating substrate, at least one transducer structure comprising inter-digitated comb electrodes, and at least one reflecting means, the reflecting means comprising at least one reflector, wherein the acoustic wave propagation substrate is a composite substrate comprising a base substrate and a piezoelectric layer, wherein the crystallographic orientation of the piezoelectric layer with respect to the base substrate is such that the propagation of a shear wave inside the piezoelectric layer and in the direction of propagation corresponding to the acoustic wave is enabled. A physical quantity determining device and a fabrication method of such surface acoustic wave tag device are also disclosed.
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公开(公告)号：US20220341881A1
公开(公告)日：2022-10-27
申请号：US17753508
申请日：2020-09-04
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Thierry LaRoche , Julien Garcia
Abstract: An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.
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公开(公告)号：US11848663B2
公开(公告)日：2023-12-19
申请号：US17263880
申请日：2019-07-25
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche
CPC classification number: H03H9/6483 , H03H9/02669 , H03H9/02724 , H03H9/02771 , H03H9/02905 , H03H9/6489
Abstract: A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.
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公开(公告)号：US20230361751A1
公开(公告)日：2023-11-09
申请号：US18042948
申请日：2021-03-03
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche , Julien Garcia , Emilie Courjon , Florent Bernard
CPC classification number: H03H9/02551 , H03H9/25 , H03H9/02574
Abstract: An acoustic wave sensor device comprises a quartz material layer comprising a planar surface, a first interdigitated transducer formed over the planar surface of the quartz material layer, a first reflection structure formed over the planar surface of the quartz material layer, a second reflection structure formed over the planar surface of the quartz material layer, a first resonance cavity formed between the first interdigitated transducer and the first reflection structure and a second resonance cavity formed between the first interdigitated transducer and the second reflection structure. The planar surface of the quartz material layer is defined by a crystal cut of a quartz material of the quartz material layer with angles φ in the range of −14° to −24°, θ in the range of −25° to −45° and ψ in the range of +8° to +28°.
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公开(公告)号：US20230308074A1
公开(公告)日：2023-09-28
申请号：US18247629
申请日：2021-09-29
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Thierry LaRoche , Julien Garcia , Alexandre Clairet
IPC: H03H9/02
CPC classification number: H03H9/02574 , H03H9/02559 , H03H9/0259 , H03H9/14538
Abstract: A surface acoustic wave (SAW) device comprises an interdigitated transducer structure and at least one acoustic wave reflective structure provided on or in an acoustic wave propagating substrate. The interdigitated transducer structure comprises a first material and the at least one acoustic wave reflective structure comprises a second material different from the first material and/or the acoustic wave reflective structure and the interdigitated transducer structure have different geometrical parameters. A sensor comprises a SAW device as described herein, and a method is used for manufacturing a SAW device comprising at least one acoustic wave reflective structure.
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Patent Agency Ranking
公开(公告)号：US20220326102A1
公开(公告)日：2022-10-13
申请号：US17753510
申请日：2020-09-04
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Thierry LaRoche , Julien Garcia
Abstract: An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.
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公开(公告)号：US20210265980A1
公开(公告)日：2021-08-26
申请号：US17263880
申请日：2019-07-25
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche
Abstract: A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips, positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.
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公开(公告)号：US20210021255A1
公开(公告)日：2021-01-21
申请号：US17043559
申请日：2019-03-14
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche
Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.
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公开(公告)号：US11828668B2
公开(公告)日：2023-11-28
申请号：US17753510
申请日：2020-09-04
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Thierry LaRoche , Julien Garcia
CPC classification number: G01L9/0025 , G01L1/165 , G01L9/008
Abstract: An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.
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公开(公告)号：US20220173721A1
公开(公告)日：2022-06-02
申请号：US17599149
申请日：2020-03-19
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche , Julien Garcia
IPC: H03H9/64 , G01K11/26 , G06K19/067 , G01S13/75
Abstract: A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.
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