DIFFERENTIAL ACOUSTIC WAVE PRESSURE SENSORS

    公开(公告)号:US20220326102A1

    公开(公告)日:2022-10-13

    申请号:US17753510

    申请日:2020-09-04

    Applicant: FREC'N'SYS

    Abstract: An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.

    SURFACE ACOUSTIC WAVE SENSOR DEVICE FORMED ON A QUARTZ SUBSTRATE

    公开(公告)号:US20230361751A1

    公开(公告)日:2023-11-09

    申请号:US18042948

    申请日:2021-03-03

    Applicant: FREC'N'SYS

    CPC classification number: H03H9/02551 H03H9/25 H03H9/02574

    Abstract: An acoustic wave sensor device comprises a quartz material layer comprising a planar surface, a first interdigitated transducer formed over the planar surface of the quartz material layer, a first reflection structure formed over the planar surface of the quartz material layer, a second reflection structure formed over the planar surface of the quartz material layer, a first resonance cavity formed between the first interdigitated transducer and the first reflection structure and a second resonance cavity formed between the first interdigitated transducer and the second reflection structure. The planar surface of the quartz material layer is defined by a crystal cut of a quartz material of the quartz material layer with angles φ in the range of −14° to −24°, θ in the range of −25° to −45° and ψ in the range of +8° to +28°.

    SURFACE ACOUSTIC WAVE DEVICE ON COMPOSITE SUBSTRATE

    公开(公告)号:US20210028760A1

    公开(公告)日:2021-01-28

    申请号:US17042768

    申请日:2019-03-20

    Applicant: FREC'N'SYS

    Abstract: A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.

    Differential acoustic wave pressure sensor with improved signal-to-noise ratio

    公开(公告)号:US11828668B2

    公开(公告)日:2023-11-28

    申请号:US17753510

    申请日:2020-09-04

    Applicant: FREC'N'SYS

    CPC classification number: G01L9/0025 G01L1/165 G01L9/008

    Abstract: An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.

    Transducer structure for source suppression in saw filter devices

    公开(公告)号:US11606079B2

    公开(公告)日:2023-03-14

    申请号:US16980328

    申请日:2019-03-14

    Applicant: FREC'N'SYS

    Abstract: A transducer structure for a surface acoustic wave device, comprising a pair of inter-digitated comb electrodes, wherein the pair of inter-digitated comb electrodes comprises neighboring electrode means belonging to different comb electrodes and having a pitch p being defined as the edge-to-edge electrode means distance between two neighboring electrode means, the pitch p satisfying the Bragg condition; characterized in that the pair of inter-digitated comb electrodes comprises at least one region in which two or more neighboring electrode means belong to the same comb electrode while having an edge-to-edge distance to each other corresponding to the pitch p. The present disclosure relates also to a surface acoustic wave filter device.

    TRANSDUCER STRUCTURE FOR AN ACOUSTIC WAVE DEVICE

    公开(公告)号:US20220407491A1

    公开(公告)日:2022-12-22

    申请号:US17753429

    申请日:2020-09-18

    Applicant: FREC'N'SYS

    Abstract: A transducer structure for a surface acoustic device comprises a composite substrate comprising a piezoelectric layer, a pair of inter-digitated comb electrodes, comprising a plurality of electrode means with a pitch p satisfying the Bragg condition, wherein the inter-digitated comb electrodes are embedded in the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The present disclosure relates also to an acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating the transducer structure. The present disclosure relates also to the use of the frequency of the bulk wave propagating in the electrode means of the transducer structure in an acoustic wave device to generate contribution at high frequency, in particular, above 3 GHz.

    DIFFERENTIAL ACCOUSTIC WAVE SENSORS

    公开(公告)号:US20220341881A1

    公开(公告)日:2022-10-27

    申请号:US17753508

    申请日:2020-09-04

    Applicant: FREC'N'SYS

    Abstract: An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.

    TRANSDUCER STRUCTURE FOR AN ACOUSTIC WAVE DEVICE

    公开(公告)号:US20220337220A1

    公开(公告)日:2022-10-20

    申请号:US17753428

    申请日:2020-09-18

    Applicant: FREC'N'SYS

    Abstract: A transducer structure for a surface acoustic device comprises a composite substrate comprising a piezoelectric layer, a pair of inter-digitated comb electrodes, comprising a plurality of electrode means with a pitch p satisfying the Bragg condition, wherein the inter-digitated comb electrodes are embedded in the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The present disclosure relates also to an acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating the transducer structure. The present disclosure relates also to the use of the frequency of the bulk wave propagating in the electrode means of the transducer structure in an acoustic wave device to generate contribution at high frequency, in particular, above 3 GHz.

    Surface acoustic wave device on composite substrate

    公开(公告)号:US11437973B2

    公开(公告)日:2022-09-06

    申请号:US17042768

    申请日:2019-03-20

    Applicant: FREC'N'SYS

    Abstract: A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.

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