Methods and apparatus for semiconductor sample workflow

    公开(公告)号:US10707137B2

    公开(公告)日:2020-07-07

    申请号:US16405506

    申请日:2019-05-07

    Applicant: FEI Company

    Abstract: Apparatus and methods are described for the automated transfer and storage of transmission electron microscope (TEM) and scanning/transmission electron microscope (STEM) lamella samples throughout a semiconductor manufacturing facility using existing automation infrastructure such as a Front Opening Unified Pod (FOUP). Also provided are wafer facsimiles corresponding to outer dimensions of semiconductor, data storage or solar cell wafers, wherein the facsimiles adapted to store, carry and/or provide a testing platform for testing of samples taken from semiconductor, data storage or solar cell wafers.

    DOSE-BASED END-POINTING FOR LOW-KV FIB MILLING IN TEM SAMPLE PREPARATION

    公开(公告)号:US20200095688A1

    公开(公告)日:2020-03-26

    申请号:US16566647

    申请日:2019-09-10

    Applicant: FEI Company

    Abstract: A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.

    Defect Analysis
    6.
    发明申请
    Defect Analysis 审中-公开

    公开(公告)号:US20180182676A1

    公开(公告)日:2018-06-28

    申请号:US15851357

    申请日:2017-12-21

    Applicant: FEI Company

    Inventor: Thomas G. Miller

    CPC classification number: H01L22/12 G01R31/2831 G01R31/307

    Abstract: A system for analyzing defects comprises determining coordinates of a defect using a wafer inspection tool; identifying a structure of interest near the defect coordinates; directing a focused ion beam toward the wafer to expose the structure of interest; and forming an image of the exposed structure of interest, wherein the focused ion beam is directed to the mill at a location corresponding to the identified structure of interest rather than at the coordinates of the defect.

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