Magnetoresistive sensor with laminate electrical interconnect
    1.
    发明授权
    Magnetoresistive sensor with laminate electrical interconnect 有权
    具有叠层电气互连的磁阻传感器

    公开(公告)号:US06683761B2

    公开(公告)日:2004-01-27

    申请号:US09981765

    申请日:2001-10-17

    Abstract: An electrical interconnect is configured to provide an electrical connection between a first point and a second point. The interconnect includes a specular reflection layer adjacent a conductor layer. The conductor is configured to conduct electrons between the first and second points and the planar specular reflection layer confines the electrons to the conductor through specular reflection. This reduces electrical resistance of the electrical interconnect measured in a direction parallel with the specular reflection layer.

    Abstract translation: 电互连被配置为提供第一点和第二点之间的电连接。 互连包括邻近导体层的镜面反射层。 导体被配置为在第一和第二点之间传导电子,并且平面镜面反射层通过镜面反射将电子限制在导体上。 这降低了在与镜面反射层平行的方向上测量的电互连的电阻。

    HARD MAGNET WITH CAP AND SEED LAYERS AND DATA STORAGE DEVICE READ/WRITE HEAD INCORPORATING THE SAME
    3.
    发明申请
    HARD MAGNET WITH CAP AND SEED LAYERS AND DATA STORAGE DEVICE READ/WRITE HEAD INCORPORATING THE SAME 有权
    具有盖和种子层的硬磁体和数据存储装置读/写头相同

    公开(公告)号:US20090274931A1

    公开(公告)日:2009-11-05

    申请号:US12112671

    申请日:2008-04-30

    Abstract: A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer. The intermediate layer includes the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The first component is different than the second component. Additionally, a read/write head including the hard magnet.

    Abstract translation: 一种包括形成多层结构的方法。 多层结构包括种子层,其包含选自由Pt族金属,Fe,Mn,Ir和Co组成的组的第一组分。多层结构还包括包含第一组分和第二组分的中间层,所述第二组分选自 由Pt族金属,Fe,Mn,Ir,Co组成的第二成分与第一成分不同。 多层结构还包括包含第一部件的盖层。 该方法还包括将多层结构加热至退火温度以引起中间层的相变。 还有一种包括种子层的硬磁体,其包含选自由Pt族金属,Fe,Mn,Ir和Co组成的组的第一组分。硬磁体还包括包含第一组分的盖层。 硬磁体还包括种子层和盖层之间的中间层。 中间层包括第一组分和选自Pt族金属,Fe,Mn,Ir和Co的第二组分。第一组分不同于第二组分。 另外,包括硬磁体的读/写头。

    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING
    4.
    发明申请
    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 有权
    具有减小的屏蔽到屏蔽间隔的磁感测装置

    公开(公告)号:US20090174968A1

    公开(公告)日:2009-07-09

    申请号:US11971664

    申请日:2008-01-09

    Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.

    Abstract translation: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间,并且包括邻近第一屏蔽的晶种层,与第二屏蔽相邻的盖层,以及种子层和盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料,以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

    Magnetoresistive sensor having low resistivity dual path conductor and optimized magnetic
    5.
    发明授权
    Magnetoresistive sensor having low resistivity dual path conductor and optimized magnetic 失效
    具有低电阻率双路导体和优化磁性的磁阻传感器

    公开(公告)号:US06954343B2

    公开(公告)日:2005-10-11

    申请号:US10142563

    申请日:2002-05-08

    CPC classification number: G11B5/3903 G11B5/313 G11B5/3932

    Abstract: A transducing head has a magnetoresistive sensor and a first and a second dual path conductor/magnet structure for providing current to the magnetoresistive sensor and for stabilizing the magnetoresistive sensor. The first and the second dual path conductor/magnet structures are arranged in an abutted-junction configuration on opposite sides of the magnetoresistive sensor. Each of the first and the second dual path conductor/magnet structures has at least one bias layer and at least one conductor layer. Each bias layer is formed upon a bias seed layer positioned over one of the conductor layers. Each bias seed layer is selected to result in the bias layer formed upon it having a coercivity between about 1 kOe and about 5 kOe and an in-plane remnant squareness greater than about 0.8. Most preferably, each of the first and the second dual path conductor/magnet structures is formed of at least two conductor layers interspersed with at least one bias layer.

    Abstract translation: 换能头具有磁阻传感器和用于向磁阻传感器提供电流并稳定磁阻传感器的第一和第二双通道导体/磁体结构。 第一和第二双路导体/磁体结构在磁阻传感器的相对侧上以邻接结构形式布置。 第一和第二双路导体/磁体结构中的每一个具有至少一个偏置层和至少一个导体层。 每个偏置层形成在位于一个导体层上的偏置种子层上。 选择每个偏置种子层以产生在其上具有矫顽力在约1kOe和约5kOe之间的偏置层和大于约0.8的面内残余矩形度。 最优选地,第一和第二双路径导体/磁体结构中的每一个由至少两个散布有至少一个偏置层的导体层形成。

    Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers
    6.
    发明授权
    Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers 有权
    垂直记录介质在软磁层中具有反铁磁交换耦合

    公开(公告)号:US06818330B2

    公开(公告)日:2004-11-16

    申请号:US09939190

    申请日:2001-08-24

    Abstract: A perpendicular magnetic recording medium with antiferromagnetic coupling in a soft magnetic underlayer. The soft magnetic underlayer includes a first magnetic soft layer, a first interface layer on the first magnetic soft layer, a second magnetic soft layer, a second interface layer on the second magnetic soft layer, and a non-magnetic coupling layer between the first interface layer and the second interface layer. The first and second magnetic soft layers are antiferromagnetically exchange coupled to one another through the non-magnetic coupling layer, wherein the first and second interface layers increase the exchange coupling between the first and second magnetic soft layers.

    Abstract translation: 在软磁性底层中具有反铁磁耦合的垂直磁记录介质。 软磁性底层包括第一磁性软层,第一磁性软层上的第一界面层,第二磁性软层,第二磁性软层上的第二界面层,以及第一界面之间的非磁性耦合层 层和第二界面层。 第一和第二磁性软层通过非磁性耦合层彼此反铁磁交换耦合,其中第一和第二界面层增加第一和第二磁性软层之间的交换耦合。

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