公开(公告)号：US4302679A

公开(公告)日：1981-11-24

申请号：US064594

申请日：1979-08-07

Applicant: David Edwards, Jr. ,  Christopher P. Lanni

Inventor： David Edwards, Jr. ,  Christopher P. Lanni

IPC: G01L21/32 ,  H01J41/04 ,  B01D59/44 ,  H01J49/26

CPC classification number: G01L21/32 ,  H01J41/04

Abstract: An ion gauge having a reduced "x-ray limit" and means for measuring that limit. The gauge comprises an ion gauge of the Bayard-Alpert type having a short collector and having means for varying the grid-collector voltage.The "x-ray limit" (i.e. the collector current resulting from x-rays striking the collector) may then be determined by the formula: ##EQU1## where: I.sub.x ="x-ray limit",I.sub.l and I.sub.h =the collector current at the lower and higher grid voltage respectively; and,.alpha.=the ratio of the collector current due to positive ions at the higher voltage to that at the lower voltage.

Abstract translation: 具有减小的“X射线极限”的离子计和用于测量该极限的装置。 该量规包括具有短集电极的Bayard-Alpert型离子计，并具有用于改变集电极电压的装置。 然后可以通过以下公式确定“x射线极限”（即，从x射线撞击到集电器的集电极电流），其中：Ix =“x射线极限”，Il和Ih =集电极电流 分别在较低和较高的电网电压; 并且α=在较高电压下由于正离子引起的集电极电流与在较低电压下的集电极电流的比率。

公开(公告)号：US4724325A

公开(公告)日：1988-02-09

申请号：US855191

申请日：1986-04-23

Applicant: Allen E. Armstrong ,  Victor M. Benveniste ,  David Edwards, Jr.

Inventor： Allen E. Armstrong ,  Victor M. Benveniste ,  David Edwards, Jr.

IPC: H01L21/265 ,  H01J37/20 ,  H01J37/317 ,  H01L21/00

CPC classification number: H01L21/67103 ,  H01J37/20

Abstract: An ion beam treatment system for treating silicon wafers placed in the ion beam path. A rotatably mounted wafer pedestal has a plurality of wafer supporting substrates spaced about the pedestal. The substrates are constructed from an elastomer that is chosen for its ability to transfer heat generated by ion collision with the wafers away from the wafers. Each wafer substrate defines a series of elongated depressions across its surface. Certain of these depressions are connected to a pressure source at a wafer loading/unloading station to help acquire the wafers during loading and to facilitate removal of the wafers during unloading. Other depressions vent the interface between the wafers and the substrate to atmosphere to avoid undue pressure build-up on the wafers as they lift off the substrate.

Abstract translation: 一种用于处理放置在离子束路径中的硅晶片的离子束处理系统。 可旋转地安装的晶片基座具有围绕基座间隔开的多个晶片支撑基板。 衬底由弹性体构成，该弹性体被选择用于将离子碰撞产生的热量与晶片远离晶片转移的能力。 每个晶片衬底在其表面上限定一系列细长的凹陷。 这些凹陷中的某些连接到晶片装载/卸载站处的压力源，以在加载期间帮助获取晶片，并且有助于在卸载期间移除晶片。 其他凹陷将晶片和基板之间的界面排出到大气中，以避免在晶片剥离基板时晶片上过度的压力积聚。

公开(公告)号：US5155368A

公开(公告)日：1992-10-13

申请号：US686043

申请日：1991-04-16

Applicant: David Edwards, Jr. ,  Billy W. Ward

Inventor： David Edwards, Jr. ,  Billy W. Ward

IPC: H01J37/09 ,  H01J37/04 ,  H01J37/147 ,  H01J37/30

CPC classification number: H01J37/045 ,  H01J2237/028

Abstract: Ion beam apparatus provides beam blanking by utilizing an aperture through which the beam passes during unblanked periods, and elements for deflecting the beam during blanking so that the beam is deflected away from the aperture. Electrodes between the aperture element and the deflecting elements generate a potential exceeding the kinetic energy of charged particles emitted from the aperture element due to ions striking the aperture element during blanking. Charged particles emitted from the aperture element are thus prevented from striking the beam deflecting elements, thereby reducing hydrocarbon cracking, insulator accumulation, and charge accumulation on the deflecting elements. Beam stability is thereby enhanced. Charged particles emitted from the aperture element are also returned to the aperture element, so that an accurate measure of ion beam current is obtained by measuring current flow to the aperture element.

Abstract translation: 离子束装置通过利用光束在未曝光期间通过的孔而提供光束消隐，以及用于在遮光期间偏转光束的元件，使得光束偏离光圈。 孔径元件和偏转元件之间的电极产生超过从孔元件发射的带电粒子的动能的电位，因为在消隐期间由于离子撞击孔元件。 因此，防止了从孔元件发射的带电粒子撞击光束偏转元件，从而减少了偏转元件上的碳氢化合物裂缝，绝缘体积聚和电荷积聚。 从而增强了梁的稳定性。 从孔径元件发射的带电粒子也返回到孔径元件，从而通过测量到孔径元件的电流来获得离子束电流的精确测量。

公开(公告)号：US4471661A

公开(公告)日：1984-09-18

申请号：US374933

申请日：1982-05-05

Applicant: David Edwards, Jr.

Inventor： David Edwards, Jr.

IPC: G01L19/14 ,  G01L21/14 ,  G01L21/32

CPC classification number: G01L21/32 ,  G01L19/14 ,  G01L21/14

Abstract: In electronic devices for measuring pressures in vacuum systems, the metal elements which undergo thermal deterioration are made readily replaceable by making them parts of a simple plug-in unit. Thus, in ionization gauges, the filament and grid or electron collector are mounted on the novel plug-in unit. In thermocouple pressure gauges, the heater and attached thermocouple are mounted on the plug-in unit. Plug-in units have been designed to function, alternatively, as ionization gauge and as thermocouple gauge, thus providing new gauges capable of measuring broader pressure ranges than is possible with either an ionization gauge or a thermocouple gauge.

Abstract translation: 在用于测量真空系统中的压力的​​电子设备中，通过使它们成为简单的插件单元的部件，可以容易地更换经历热劣化的金属元件。 因此，在电离计中，灯丝和栅格或电子收集器安装在新颖的插入单元上。 在热电偶压力表中，加热器和附加的热电偶安装在插件上。 插入式单元的设计可以用作电离计和热电偶规格，从而提供能够测量比用电离计或热电偶量规更宽的压力范围的新量规。

公开(公告)号：US4976843A

公开(公告)日：1990-12-11

申请号：US474348

申请日：1990-02-02

Applicant: Billy W. Ward ,  David Edwards, Jr. ,  Robert A. Casella

Inventor： Billy W. Ward ,  David Edwards, Jr. ,  Robert A. Casella

IPC: B23K15/06 ,  H01J37/02 ,  H01J37/09

CPC classification number: B23K15/06 ,  H01J37/026 ,  H01J37/09 ,  H01J2237/31749

Abstract: An apparatus is described for allowing an ion beam and an electron beam to travel toward a predetermined region of a substrate surface during the sputter etching and imaging of insulating and other targets while preventing deflection of the electron beam by sources of stray electrostatic fields on the substrate surface. A metal shield is provided having a funnel-shaped portion leading to an orifice. The incident finely focused ion beam, together with the electron beam, which is used to neutralize the charge created by the incident ion beam, pass to the target through the orifice. The shield also physically supports a gas injection needle that injects a gas through the orifice toward the predetermined region.

Abstract translation: 描述了一种装置，用于在溅射蚀刻和绝缘和其它目标的成像期间允许离子束和电子束朝向衬底表面的预定区域行进，同时防止电子束由衬底上的杂散静电场的源偏转 表面。 设置有通向孔的漏斗形部分的金属屏蔽。 与用于中和由入射离子束产生的电荷的电子束一起入射的精细聚焦离子束通过孔传递到靶。 护罩还物理地支撑气体注射针，其将气体通过孔朝向预定区域注入。

公开(公告)号：US4409817A

公开(公告)日：1983-10-18

申请号：US247613

申请日：1981-03-25

Applicant: David Edwards, Jr.

Inventor： David Edwards, Jr.

IPC: G01M3/22 ,  G01M3/20

CPC classification number: G01M3/226

Abstract: Apparatus and method for detecting leakage in a vacuum system involves a moisture trap chamber connected to the vacuum system and to a pressure gauge. Moisture in the trap chamber is captured by freezing or by a moisture adsorbent to reduce the residual water vapor pressure therein to a negligible amount. The pressure gauge is then read to determine whether the vacuum system is leaky. By directing a stream of carbon dioxide or helium at potentially leaky parts of the vacuum system, the apparatus can be used with supplemental means to locate leaks.

Abstract translation: 用于检测真空系统泄漏的装置和方法包括连接到真空系统和压力计的吸湿室。 捕集室中的水分通过冷冻或通过水分吸附剂捕获，以将其中的残余水蒸气压降低到可忽略的量。 然后读取压力表以确定真空系统是否泄漏。 通过在真空系统的潜在泄漏部分引导二氧化碳或氦气流，可以使用补充装置来定位泄漏。

公开(公告)号：US5103102A

公开(公告)日：1992-04-07

申请号：US315732

申请日：1989-02-24

Applicant: Nicholas P. Economou ,  David Edwards, Jr. ,  Nicholas Guarino

Inventor： Nicholas P. Economou ,  David Edwards, Jr. ,  Nicholas Guarino

IPC: G03F1/08 ,  B01J3/00 ,  B23K15/06 ,  B23K26/00 ,  C23C16/48 ,  G03F1/16 ,  H01J37/18

CPC classification number: H01J37/18 ,  H01J2237/006

Abstract: An apparatus for generating a localized, non-contact vacuum seal at a selected process region of a workpiece surface includes a vacuum body with a workpiece-facing surface having a plurality of concentric grooves and a central bore thorugh which a process energy beam can be transmitted. A method of generating a localized vacuum seal includes placing the vacuum body into selected proximity with the process region of the workpiece surface, and differentially evacuating the grooves, thereby defining differentially pumped vacuum chambers which reduce the influx of atmospheric particles to the process region. A selected control gas can be introduced into a vacuum body groove to further reduce the influx of atmospheric particles to the process region, and selected process gases can be introduced into the vacuum body to react with the process beam.

公开(公告)号：US4214473A

公开(公告)日：1980-07-29

申请号：US970842

申请日：1978-12-18

Applicant: David Edwards, Jr. ,  William Schneider

Inventor： David Edwards, Jr. ,  William Schneider

IPC: G01N25/02 ,  G01N25/14

CPC classification number: G01N25/142 ,  G01N25/02

Abstract: Simple apparatus for analyzing trace impurities in a gas, such as helium or hydrogen, comprises means for drawing a measured volume of the gas as sample into a heated zone. A segregable portion of the zone is then chilled to condense trace impurities in the gas in the chilled portion. The gas sample is evacuated from the heated zone including the chilled portion. Finally, the chilled portion is warmed to vaporize the condensed impurities in the order of their boiling points. As the temperature of the chilled portion rises, pressure will develop in the evacuated, heated zone by the vaporization of an impurity. The temperature at which the pressure increase occurs identifies that impurity and the pressure increase attained until the vaporization of the next impurity causes a further pressure increase is a measure of the quantity of the preceding impurity.

Abstract translation: 用于分析气体（例如氦气或氢气）中的微量杂质的简单装置包括用于将测量体积的气体作为样品抽吸到加热区中的装置。 然后冷却该区域的可分离部分以冷凝冷冻部分中的气体中的痕量杂质。 将气体样品从包括冷冻部分的加热区抽真空。 最后，将冷却的部分加热，使其冷凝的杂质以其沸点的顺序蒸发。 随着冷却部分的温度升高，通过杂质的蒸发，在抽空的加热区域中将产生压力。 发生压力增加的温度表明杂质和压力增加达到，直到下一个杂质的蒸发导致进一步的压力增加是前面杂质的量的量度。