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    High aspect ratio glass wafer
    1.
    发明授权
    High aspect ratio glass wafer 有权

    公开(公告)号：US10935698B2

    公开(公告)日：2021-03-02

    申请号：US15903787

    申请日：2018-02-23

    申请人： Corning Incorporated

    发明人： Michael Lucien Genier ,  John Tyler Keech ,  Robert Sabia

    IPC分类号： G02B1/11 ,  H01L27/12 ,  H01L21/68 ,  C03C17/00 ,  C03C3/06 ,  C03C1/00

    摘要： A glass wafer having a first major surface, a second major surface that is parallel to and opposite of the first major surface, a thickness between the first major surface and the second major surface, and an annular edge portion that extends from an outermost diameter of the glass wafer toward the geometrical center of the glass wafer. The glass wafer has a diameter from greater than or equal to 175 mm to less than or equal to 325 mm and a thickness of less than 0.350 mm. A width of the edge portion is less than 10 mm.

    BOTTOM-UP ELECTROLYTIC VIA PLATING METHOD
    3.
    发明申请
    BOTTOM-UP ELECTROLYTIC VIA PLATING METHOD 审中-公开
    底镀电镀方法

    公开(公告)号：US20160128202A1

    公开(公告)日：2016-05-05

    申请号：US14933315

    申请日：2015-11-05

    申请人： CORNING INCORPORATED

    发明人： Robert Alan Bellman ,  John Tyler Keech ,  Ekaterina Aleksandrovna Kuksenkova ,  Scott Christopher Pollard

    IPC分类号： H05K3/00 ,  H05K3/42

    CPC分类号： H05K3/0094 ,  C25D1/04 ,  C25D5/022 ,  C25D7/123 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/15 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/423 ,  H01L2924/00

    摘要： Disclosed herein is a bottom-up electrolytic via plating method wherein a first carrier substrate and a second substrate having at least one through-via are temporarily bonded together. The method includes applying a seed layer on a surface of the first substrate, forming a surface modification layer on the seed layer or the second substrate, bonding the second substrate to the first substrate with the surface modification layer to create an assembly wherein the seed layer and the surface modification layer are disposed between the first and second substrates, applying conductive material to the through-via, removing the second substrate having the through-via containing conductive material from the assembly.

    摘要翻译： 本文公开了一种自下而上的电解通孔电镀方法，其中具有至少一个通孔的第一载体基板和第二基板临时粘合在一起。 该方法包括将种子层施加在第一衬底的表面上，在种子层或第二衬底上形成表面改性层，用表面改性层将第二衬底粘合到第一衬底以产生组件，其中种子层 并且所述表面改性层设置在所述第一和第二基板之间，将导电材料施加到所述通孔，从所述组件移除具有包含导电材料的所述通孔的所述第二基板。

    COATED GLASS ARTICLES AND PROCESSES FOR PRODUCING THE SAME
    4.
    发明申请
    COATED GLASS ARTICLES AND PROCESSES FOR PRODUCING THE SAME 有权

    公开(公告)号：US20220017408A1

    公开(公告)日：2022-01-20

    申请号：US17488397

    申请日：2021-09-29

    申请人： Corning Incorporated

    发明人： John Tyler Keech ,  Jean-Francois Oudard ,  Robert Sabia ,  Leena Kumari Sahoo ,  Leonard Gerard Wamboldt

    IPC分类号： C03C17/34 ,  C03C23/00 ,  H01J37/32 ,  C23C14/50 ,  G02B1/115

    摘要： According to one embodiment, a method for producing a coated glass article may include applying an anti-reflective coating onto a glass substrate. The glass substrate may include a first major surface, and a second major surface opposite the first major surface. The anti-reflective coating may be applied to the first major surface of the glass substrate. A substrate thickness may be measured between the first major surface and the second major surface. The glass substrate may have an aspect ratio of at least about 100:1. The coated glass article may have a reflectance of less than 2% for all wavelengths from 450 nanometers to 700 nanometers. The anti-reflective coating may include one or more layers. The cumulative layer stress of the anti-reflective coating may have an absolute value less than or equal to about 167,000 MPa nm.

    Coated glass articles and processes for producing the same
    6.
    发明授权
    Coated glass articles and processes for producing the same 有权

    公开(公告)号：US11161778B2

    公开(公告)日：2021-11-02

    申请号：US15808079

    申请日：2017-11-09

    申请人： Corning Incorporated

    发明人： John Tyler Keech ,  Robert Sabia ,  Jean-Francois Oudard ,  Leena Kumari Sahoo ,  Leonard Gerard Wamboldt

    IPC分类号： C03C17/34 ,  C03C23/00 ,  H01J37/32 ,  C23C14/50 ,  G02B1/115

    摘要： According to one embodiment, a method for producing a coated glass article may include applying an anti-reflective coating onto a glass substrate. The glass substrate may include a first major surface, and a second major surface opposite the first major surface. The anti-reflective coating may be applied to the first major surface of the glass substrate. A substrate thickness may be measured between the first major surface and the second major surface. The glass substrate may have an aspect ratio of at least about 100:1. The coated glass article may have a reflectance of less than 2% for all wavelengths from 450 nanometers to 700 nanometers. The anti-reflective coating may include one or more layers. The cumulative layer stress of the anti-reflective coating may have an absolute value less than or equal to about 167,000 MPa nm.

    CARRIER-BONDING METHODS AND ARTICLES FOR SEMICONDUCTOR AND INTERPOSER PROCESSING
    7.
    发明申请
    CARRIER-BONDING METHODS AND ARTICLES FOR SEMICONDUCTOR AND INTERPOSER PROCESSING 审中-公开
    用于半导体和介质处理的载体接合方法和文章

    公开(公告)号：US20150102498A1

    公开(公告)日：2015-04-16

    申请号：US14511411

    申请日：2014-10-10

    申请人： Corning Incorporated

    发明人： Darwin Gene Enicks ,  John Tyler Keech ,  Aric Bruce Shorey ,  Windsor Pipes Thomas, III

    IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L23/498

    摘要： A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in FEOL semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers. Alternatively, the thin sheet may be a substrate on which semiconductor circuits are formed during FEOL processing.

    摘要翻译： 一种经由表面改性层（30）设置在载体（10）上以形成制品（2）的薄片（20），其中所述制品可以经受高温处理，如在FEOL半导体加工中，不排气并具有 在加工过程中，薄片保持在载体上而不与其分离，然后在室温剥离力下将其从其中分离出来，使得薄片和载体中的较薄的一个完整。 具有通孔（60）阵列（50）的插入件（56）可以形成在薄片上，以及形成在插入件上的器件（66）。 或者，薄片可以是在FEOL处理期间形成半导体电路的基板。

    Waveguide-based optical systems and methods for augmented reality systems
    9.
    发明授权
    Waveguide-based optical systems and methods for augmented reality systems 有权

    公开(公告)号：US10929667B2

    公开(公告)日：2021-02-23

    申请号：US16156355

    申请日：2018-10-10

    申请人： Corning Incorporated

    发明人： John Tyler Keech ,  Mark Francis Krol

    IPC分类号： G06K9/00 ,  G02B27/00 ,  G02B6/12 ,  G02B6/122 ,  G02B27/01

    摘要： An augmented reality optical system comprises a waveguide structure that includes a waveguide layer supported by a substrate. An input grating and an output grating reside within the waveguide layer and are laterally spaced apart. Input light from a display is made incident upon the input grating. The input light is coupled into the waveguide layer and travels therein as multiple guided modes to the output grating. The input and output gratings provide phase matching so that the guided modes are coupled out of the waveguide layer by the output grating continuously along the output grating to form output light. Meantime, light from a scene is transmitted perpendicularly through the output grating so that the output light and the light from the scene are combined by the eye of a user to form an augmented reality image.