公开(公告)号：US20080272378A1

公开(公告)日：2008-11-06

申请号：US12137519

申请日：2008-06-11

Applicant: Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L29/15 ,  H01L21/31

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

Abstract: There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.

Abstract translation: 提供一种形成氮化物半导体层的方法，包括以下步骤：首先提供其上形成有墩结构的图案化外延层的基板。 然后在图案化的外延层上形成保护层，露出墩结构的顶表面。 接下来，在通过墩结构连接到氮化物半导体层的图案化外延层上形成氮化物半导体层，其中氮化物半导体层，墩结构和图案化外延层一起形成暴露氮化物的底表面的空间 半导体层。 此后，执行弱化处理以去除氮化物半导体层的底表面的一部分并削弱墩结构的顶表面和氮化物半导体层之间的连接点。 最后，通过连接点将衬底与氮化物半导体层分离。

公开(公告)号：US20080054293A1

公开(公告)日：2008-03-06

申请号：US11562421

申请日：2006-11-22

Applicant: Chih-Ming Lai ,  Po-Chun Liu

Inventor： Chih-Ming Lai ,  Po-Chun Liu

IPC: H01L33/00

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: A method of manufacturing a nitride semiconductor substrate is provided. A partial surface treatment process is performed to rough a portion of a surface of a substrate. Next, a nitride semiconductor layer is formed over the substrate. Since the nitride semiconductor layer simply grows on the unroughened surface of the substrate through selective area epitaxy growth and lateral epitaxy growth, some of the threading dislocations in the nitride semiconductor layer are blocked. Thereby, the threading dislocation density of the grown nitride semiconductor layer is reduced.

Abstract translation: 提供一种制造氮化物半导体衬底的方法。 进行部分表面处理工艺以粗糙化衬底表面的一部分。 接下来，在衬底上形成氮化物半导体层。 由于氮化物半导体层通过选择性区域外延生长和横向外延生长简单地在衬底的未粗化表面上生长，所以氮化物半导体层中的一些穿透位错被阻挡。 因此，生长的氮化物半导体层的穿透位错密度降低。

公开(公告)号：US20100181577A1

公开(公告)日：2010-07-22

申请号：US12749495

申请日：2010-03-29

Applicant: Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L29/20 ,  H01L29/12

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

Abstract: There is provided a nitride semiconductor substrate. The nitride semiconductor substrate comprises a substrate, a patterned epitaxy layer, a protective layer and a gallium nitride semiconductor layer. The patterned epitaxy layer is disposed on the substrate, wherein the patterned epitaxy layer comprises a pier structure and the patterned epitaxy layer has an upper surface and a lower surface opposite to the upper surface and the lower surface faces to the substrate. The protective layer covers a portion of the upper surface of the patterned epitaxy layer to expose a top surface of the pier structure. The gallium nitride (GaN) semiconductor layer extends substantially across an entire area above the patterned epitaxy layer and connected to the exposed top surface of the pier structure.

Abstract translation: 提供了一种氮化物半导体衬底。 氮化物半导体衬底包括衬底，图案化外延层，保护层和氮化镓半导体层。 图案化外延层设置在基板上，其中图案化外延层包括墩结构，并且图案化外延层具有上表面和与上表面相对的下表面，下表面面向基板。 保护层覆盖图案化外延层的上表面的一部分以暴露码头结构的顶表面。 氮化镓（GaN）半导体层基本上延伸在图案化外延层上方的整个区域上并连接到暴露的墩结构的顶表面。

公开(公告)号：US08058705B2

公开(公告)日：2011-11-15

申请号：US12551534

申请日：2009-08-31

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract translation: 具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。 这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

公开(公告)号：US07687378B2

公开(公告)日：2010-03-30

申请号：US11467167

申请日：2006-08-25

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

公开(公告)号：US20080006849A1

公开(公告)日：2008-01-10

申请号：US11467167

申请日：2006-08-25

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L29/76 ,  H01L29/745

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

公开(公告)号：US08647901B2

公开(公告)日：2014-02-11

申请号：US12137519

申请日：2008-06-11

Applicant: Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L21/02

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

Abstract: There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.

Abstract translation: 提供一种形成氮化物半导体层的方法，包括以下步骤：首先提供其上形成有墩结构的图案化外延层的基板。 然后在图案化的外延层上形成保护层，露出墩结构的顶表面。 接下来，在通过墩结构连接到氮化物半导体层的图案化外延层上形成氮化物半导体层，其中氮化物半导体层，墩结构和图案化外延层一起形成暴露氮化物的底表面的空间 半导体层。 此后，执行弱化处理以去除氮化物半导体层的底表面的一部分并削弱墩结构的顶表面和氮化物半导体层之间的连接点。 最后，通过连接点将衬底与氮化物半导体层分离。

公开(公告)号：US20100013054A1

公开(公告)日：2010-01-21

申请号：US12551534

申请日：2009-08-31

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L29/201

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract translation: 具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。 这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

公开(公告)号：US07772595B2

公开(公告)日：2010-08-10

申请号：US11554603

申请日：2006-10-31

Applicant: Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L27/15

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

Abstract: There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.

Abstract translation: 提供一种形成氮化物半导体层的方法，包括以下步骤：首先提供其上形成有墩结构的图案化外延层的基板。 然后在图案化的外延层上形成保护层，露出墩结构的顶表面。 接下来，在通过墩结构连接到氮化物半导体层的图案化外延层上形成氮化物半导体层，其中氮化物半导体层，墩结构和图案化外延层一起形成暴露氮化物的底表面的空间 半导体层。 此后，执行弱化处理以去除氮化物半导体层的底表面的一部分并削弱墩结构的顶表面和氮化物半导体层之间的连接点。 最后，通过连接点将衬底与氮化物半导体层分离。

公开(公告)号：US20080054292A1

公开(公告)日：2008-03-06

申请号：US11554603

申请日：2006-10-31

Applicant: Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

Inventor： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

IPC: H01L33/00 ,  H01L21/00

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

Abstract: There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.

Abstract translation: 提供一种形成氮化物半导体层的方法，包括以下步骤：首先提供其上形成有墩结构的图案化外延层的基板。 然后在图案化的外延层上形成保护层，露出墩结构的顶表面。 接下来，在通过墩结构连接到氮化物半导体层的图案化外延层上形成氮化物半导体层，其中氮化物半导体层，墩结构和图案化外延层一起形成暴露氮化物的底表面的空间 半导体层。 此后，执行弱化处理以去除氮化物半导体层的底表面的一部分并削弱墩结构的顶表面和氮化物半导体层之间的连接点。 最后，通过连接点将衬底与氮化物半导体层分离。