Abstract:
A nitride cantilever is formed with an integral conical silicon tip at the free end thereof. A top layer of silicon dioxide is patterned into a tip mask on a doped or epitaxial silicon layer in a silicon substrate. Photoresist is spun on the silicon substrate and patterned and the silicon is etched to define a cantilever pattern in the substrate with the tip mask positioned to be near the free end of a nitride cantilever to be subsequently formed. A bottom layer of silicon dioxide is formed on the silicon substrate and then patterned and etched to define a masking aperture on the bottom silicon dioxide layer. The bottom of the silicon substrate is anisotropically etched through the masking aperture and the etch stops at the doped silicon layer. Alternatively, electrochemical etching is done by applying an electric potential across the P-N junction between the doped silicon layer and the appropriately-doped substrate. This releases the free end of the doped silicon layer from the silicon substrate. The anisotropic etch preferentially etches all of the crystal planes of the silicon substrate except the (111) planes to leave a silicon base from which extends the silicon surface layer as a cantilever. A nitride layer is then formed on the silicon substrate and dry etched from the top surface of the doped silicon surface layer to form a nitride cantilever on the bottom of the silicon substrate. The doped silicon layer is etched away while the tip mask helps to form a pointed silicon tip near the free end of the nitride cantilever.A microfabricated cantilever includes a (100) silicon base having a (111) oblique side. A nitride layer is formed over the (111) oblique side of the silicon base and extends outwardly from the top surface of the silicon base to form a nitride cantilever having one end fixed to the silicon base and having a free end. On the free end is fixed a single-crystal sharp conical silicon tip which extends upwardly.
Abstract:
Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.
Abstract:
A stylet for inserting an electrode array into a cochlea includes a first sensor insertable within a lumen of the electrode array and sensitive to force applied by a lumen wall to the first sensor and a first actuator adapted to move the electrode array in response to the force sensed by the first sensor.
Abstract:
A method for calibrating a computer program that simulates a physical process and a photomask are disclosed. A first physical artifact may be exposed to the physical process to produce a second physical artifact. The first physical artifact may include one or more features characterized by traceably measured known dimensions. One or more features of the second physical artifact may be measured to produce one or more measured dimensions. The physical process may be simulated with a computer simulation using the known dimensions of the first physical artifact as inputs to produce an output. The output may be compared to the measured dimensions of the second physical artifact to produce a result. A figure of merit may be assigned to the computer simulation based on the result. The photomask may have one or more features with one or more traceably measured dimensions.
Abstract:
A calibration standard, for calibrating lateral or angular dimensional measurement systems, is provided. The standard may include a first substrate spaced from a second substrate. The standard may be cross-sectioned in a direction substantially perpendicular or substantially non-perpendicular to an upper surface of the first substrate. The cross-sectioned portion of the standard may form a viewing surface of the calibration standard. The standard may include at least one layer disposed between the first and second substrates. The layer, or a feature etched into the first or second substrate or a feature etched into the layer may have a traceably measured thickness or may be oriented at a traceably measured angle with respect to the viewing surface. A thickness or angle of the layer or other feature may be traceably measured using any technique for calibrating a measurement system with a standard reference material traceable to a national testing authority.
Abstract:
A scanning mechanism is provided for use in a scanning probe microscope. The scanning mechanism includes a stationary portion; a moveable portion; a plurality of springs attaching the moveable portion to the fixed portion, the plurality of springs providing tension against movement of the moveable portion relative to the stationary portion, the tension provided by the plurality of springs having a substantially linear spring constant over a scan distance; and one or more voice coils attached to either the moveable portion or the stationary portion for moving the moveable portion relative to the stationary portion in one or more orthogonal directions.
Abstract:
A stylet for inserting an electrode array into a cochlea includes a first sensor insertable within a lumen of the electrode array and sensitive to force applied by a lumen wall to the first sensor and a first actuator adapted to move the electrode array in response to the force sensed by the first sensor.
Abstract:
A process and structure for mounting a small sample in an opening in a larger substrate by using an intermediate size structure, wherein the small sample is mounted in a small opening in the intermediate size structure which then, in turn, is mounted in an intermediate size opening in the large substrate. As a result, the formation of gaps around the edge of the sample may be voided. The process is carried out by first mounting the test sample in a opening formed with tapered sidewalls through a die with the upper surface of the sample directly abutting the edges of the smallest portion of the tapered opening in the die, The die is then mounted in an opening with tapered sidewalls in a test wafer. The opening in the die is sized to equal, at the smallest end of the tapered sidewalls of the opening, the width and length of the square sample. By placing down on a common flat surface abutting one another, both the surface of interest of the sample, and the surface of the die adjacent the smallest portion of the tapered sidewall opening, the die and the sample may be secured to one another by an adhesive introduced into the gap on the respective rear sides of the die and sample. Virtually no gap is visible between the surface of the sample and the surface of the die abutting one another when the sample and the die are joined in this manner. The secured-together die and sample are then inverted and placed in a larger opening in the test wafer and then bonded to the wafer. When a gap is thus formed between the wafer and the die, this is usually far enough from the sample so as to not be within the field of view of equipment focused on the sample.
Abstract:
A microminiature cantilever structure is provided having a cantilever arm with a piezoresistive resistor embedded in at least the fixed end of the cantilever arm. Deflection of the free end of the cantilever arm produces stress in the base of the cantilever. That stress changes the piezoresistive resistor's resistance at the base of the cantilever in proportion to the cantilever arm's deflection. Resistance measuring apparatus is coupled to the piezoresistive resistor to measure its resistance and to generate a signal corresponding to the cantilever arm's deflection. The microminiature cantilever is formed on a semiconductor substrate. A portion of the free end of the cantilever arm is doped to form an electrically separate U-shaped piezoresistive resistor. The U-shaped resistor has two legs oriented parallel to an axis of the semiconductor substrate having a non-zero piezoresistive coefficient. A metal layer is deposited over the semiconductor's surface and patterned to form an electrical connection between the piezoresistive resistor and a resistance measuring circuit, enabling measurement of the piezoresistive resistor's resistance. Finally, the semiconductor substrate below said cantilever arm is substantially removed so as to form a cantilevered structure, and a tip is connected to the free end of the cantilever arm to facilitate the structure's use in an atomic force microscope.
Abstract:
A microminiature cantilever structure is provided having a cantilever arm with a piezoresistive resistor embedded in at least the fixed end of the cantilever arm. Deflection of the free end of the cantilever arm produces stress in the base of the cantilever. That stress changes the piezoresistive resistor's resistance at the base of the cantilever in proportion to the cantilever arm's deflection. Resistance measuring apparatus is coupled to the piezoresistive resistor to measure its resistance and to generate a signal corresponding to the cantilever arm's deflection. The microminiature cantilever is formed on a semiconductor substrate. A portion of the free end of the cantilever arm is doped to form an electrically separate U-shaped piezoresistive resistor. The U-shaped resistor has two legs oriented parallel to an axis of the semiconductor substrate having a non-zero piezoresistive coefficient. A metal layer is deposited over the semiconductor's surface and patterned to form an electrical connection between the piezoresistive resistor and a resistance measuring circuit, enabling measurement of the piezoresistive resistor's resistance. Finally, the semiconductor substrate below the cantilever arm is substantially removed so as to form a cantilevered structure, and a tip is connected to the free end of the cantilever arm to facilitate the structure's use in an atomic force microscope.