摘要:
The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.
摘要:
An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.
摘要:
An organic photodetector comprising a first electrode (11 to 31) that is plane and formed on a substrate (10 to 30) that is plane, a convex active layer (12 to 32) formed on the first electrode, and a second electrode (13 to 33) formed on the active layer, means for concentrating light radiation in the active layer being incorporated in the photodetector.
摘要:
Sheet comprising a flexible support and a coating at least partially covering at least one face of the support, the support being made of a support material exhibiting dielectric properties, the coating being made of a coating material different from the support material and exhibiting magneto-dielectric properties or dielectric properties.
摘要:
The invention relates to a manufacturing process of a pixel array of a thermal pattern sensor comprising the steps of: providing a substrate; depositing a first layer of electrically conductive material, including depositing electrically conductive tracks, depositing of connector pins and depositing a ground strip; depositing of second layer of pyroelectric material covering the tracks and leaving at least part of the connector pins free; depositing of third layer of electrically conductive material; depositing of fourth layer of dielectric material in contact with the third layer; depositing of a fifth layer including electrically conductive heating tracks; depositing of a sixth protective layer, wherein the step of depositing the second and/or third and/or fourth and/or sixth layer is carried out by slot-die coating.
摘要:
An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function Φ1; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function φ2 and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function φ2 of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 108Ω.
摘要:
A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO). The material includes at least ATO and/or ITO.
摘要:
An organic transistor including at least one lower substrate made of plastic material, two electrodes, respectively a source electrode and a drain electrode, deposited on the plastic substrate, a semiconductor layer made of an organic semiconductor material and deposited on the electrodes and the plastic substrate, a dielectric layer deposited on the semiconductor layer, and a gate electrode formed on said dielectric layer. It further includes a porous layer extending between the plastic substrate and the semiconductor layer, said porous layer extending at least between the source and drain electrodes, to decrease the dielectric constant of the surface of said plastic substrate.
摘要:
A photodetector is provided, including an active layer configured to generate charge carriers of a first type and of a second type by absorption of electromagnetic radiation; a first electrode configured to collect the charge carriers of the first type; and a second electrode configured to collect the charge carriers of the second type, the first electrode including a layer configured to collect the charge carriers of the first type, the layer including self-assembled monolayers, and nanowires comprising metal and functionalized by the self-assembled monolayers, the self-assembled monolayers of the layer are configured to functionalize the nanowires and to modify a work function of a material forming the nanowires. A method for manufacturing a photodetector and an electrode for a photodetector are also provided.
摘要:
Thermal pattern sensor comprising several pixels arranged on a substrate, each pixel including at least one pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material, and in which at least one protective dielectric layer is arranged between the portion of pyroelectric material and the upper electrode and comprises at least one of the following materials: fluoropolymer, self-assembled molecular monolayer, dielectric material soluble in a solvent orthogonal to the pyroelectric material.