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    3D static RAM core cell having vertically stacked structure, and static RAM core cell assembly comprising same
    1.
    发明授权
    3D static RAM core cell having vertically stacked structure, and static RAM core cell assembly comprising same 有权

    公开(公告)号：US10692935B2

    公开(公告)日：2020-06-23

    申请号：US16066862

    申请日：2016-12-28

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Jimin Kwon ,  Sungjune Jung ,  Jae Joon Kim ,  Kilwon Cho ,  Sujeong Kyung

    IPC: H01L27/28 ,  H01L27/11 ,  H01L23/522 ,  H01L23/528 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10

    Abstract: Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor layer being electrically connected to each other, and at least one electrode of the second transistor layer and at least one electrode of the third transistor layer being electrically connected to each other. Thereby, the static RAM core cell is configured such that organic transistors of the same type are arranged in the same plane and are vertically stacked, thus omitting a complicated patterning process for forming organic transistors of different types upon fabrication of a memory element, and also reducing the area occupied by the memory element to thereby increase the degree of integration of semiconductor circuits.

    Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate
    7.
    发明授权
    Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate 有权

    公开(公告)号：US11117804B2

    公开(公告)日：2021-09-14

    申请号：US15867913

    申请日：2018-01-11

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Kilwon Cho ,  Min Seok Yoo ,  Hyo Chan Lee

    IPC: C01B32/182 ,  C01B32/186 ,  C23C14/34 ,  C23C16/26 ,  C23C16/04 ,  C23C16/02

    Abstract: Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

    Thin-film transistor-based pressure sensor and method of manufacturing same
    9.
    发明授权
    Thin-film transistor-based pressure sensor and method of manufacturing same 有权

    公开(公告)号：US10978595B2

    公开(公告)日：2021-04-13

    申请号：US16364566

    申请日：2019-03-26

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Sanghoon Baek ,  Sungjune Jung ,  Jimin Kwon ,  Geunyeol Bae ,  Kilwon Cho

    IPC: H01L29/84 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

    Abstract: Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

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