公开(公告)号：US10692935B2

公开(公告)日：2020-06-23

申请号：US16066862

申请日：2016-12-28

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Jimin Kwon ,  Sungjune Jung ,  Jae Joon Kim ,  Kilwon Cho ,  Sujeong Kyung

IPC: H01L27/28 ,  H01L27/11 ,  H01L23/522 ,  H01L23/528 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10

Abstract: Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor layer being electrically connected to each other, and at least one electrode of the second transistor layer and at least one electrode of the third transistor layer being electrically connected to each other. Thereby, the static RAM core cell is configured such that organic transistors of the same type are arranged in the same plane and are vertically stacked, thus omitting a complicated patterning process for forming organic transistors of different types upon fabrication of a memory element, and also reducing the area occupied by the memory element to thereby increase the degree of integration of semiconductor circuits.