公开(公告)号：US09718251B2

公开(公告)日：2017-08-01

申请号：US14826883

申请日：2015-08-14

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Kilwon Cho ,  Joon Hak Oh ,  Boseok Kang ,  Moonjeong Jang ,  Yoonyoung Chung ,  Haena Kim ,  Sang Kyu Kwak

IPC: H01L51/00 ,  G01N27/414 ,  B32B3/26 ,  H01L51/05 ,  B32B5/16 ,  B32B27/14

CPC classification number: B32B3/26 ,  B32B5/16 ,  B32B27/14 ,  B32B2264/0214 ,  B32B2307/202 ,  C09D5/00 ,  H01L51/0055 ,  H01L51/0558

Abstract: Disclosed herein is a laminate comprising: a substrate; an organic surface modifying layer disposed on the substrate; and a porous organic semiconductor layer disposed on the surface modifying layer. Onto the substrate, introduction of the organic surface modifying layer having a low surface energy, and optionally the organic intermediate layer having a low glass transition temperature controls the self assembly of the organic semiconductor layer, allowing the porous organic semiconductor layer to have high crystallinity and large crystal grains. Also, provided is a highly efficient chemical sensor comprising the laminate.

公开(公告)号：US11050024B2

公开(公告)日：2021-06-29

申请号：US16168885

申请日：2018-10-24

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Kilwon Cho ,  Jinsung Kim ,  Boseok Kang

IPC: H01L51/00 ,  H01L51/05 ,  B05D1/18 ,  C08J7/14 ,  C08J7/12 ,  H01L51/42 ,  H01L51/50

Abstract: Disclosed is a method of manufacturing a surface-modified polymer film, including forming a hydroxyl group (—OH) on the surface of a polymer film by subjecting the polymer film to light irradiation and surface treatment with a photoacid generator. The polymer film can be introduced with a hydroxyl group (—OH) group using a photoacid generator, thereby modifying the surface of the polymer film without damage to the polymer film. Also, an organic electronic device including the surface-modified polymer film can be improved in electrical characteristics and stability.

公开(公告)号：US10804480B2

公开(公告)日：2020-10-13

申请号：US15561039

申请日：2016-03-18

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Kilwon Cho ,  Haena Kim ,  Boseok Kang

IPC: H01L51/10 ,  B32B9/00 ,  B32B9/04 ,  C01B32/192 ,  H01L51/44 ,  C01B32/198 ,  H01B1/04 ,  H01L51/00 ,  H01L51/52

Abstract: Disclosed is a graphene laminate including a first graphene layer, containing an electron-donating functional group, and a second graphene layer, disposed on the first graphene layer and configured to include graphene, wherein the second graphene layer is n-doped with the first graphene layer. Thereby, graphene is doped with amino-group-modified graphene, thus preventing the transparency of graphene from decreasing, and the extent of doping of graphene can be adjusted, and the doping effect can last a long time even without any protective layer.

公开(公告)号：US10600962B2

公开(公告)日：2020-03-24

申请号：US16189897

申请日：2018-11-13

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Kilwon Cho ,  Seon Baek Lee ,  Boseok Kang

IPC: H01L51/00 ,  H01L51/05

Abstract: Disclosed is a method of manufacturing an organic semiconductor thin film, including preparing semiconductor ink containing a solvent, a low-molecular-weight organic semiconductor and a high-molecular-weight organic semiconductor and forming an organic semiconductor thin film vertically phase-separated by applying the semiconductor ink on a substrate through a bar-coating process using a bar. In the bar-coating process of the invention, the semiconductor ink blend is used, and the gap between the substrate and the bar is adjusted, thus controlling vertical phase separation. Also, the speed of the bar, the gap of which is adjusted, is regulated, thus controlling crystal growth, whereby the uniformity of the thin film is improved and thus a high-quality organic semiconductor crystalline thin film having a large area can be manufactured in a continuous process. Also, a flexible organic semiconductor transistor, having high stability and high charge mobility, can be provided using the organic semiconductor thin film.

公开(公告)号：US20190013488A1

公开(公告)日：2019-01-10

申请号：US15833090

申请日：2017-12-06

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Kilwon CHO ,  Boseok Kang ,  Seong Kyu Lee

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

Abstract: Disclosed is a nanopatch graphene composite, which includes graphene including a defect and a nanopatch positioned on the defect, and is configured such that a nanopatch is formed through a self-assembling process on the surface of graphene, thus improving the mechanical properties and durability of the graphene composite. Also, a flexible organic transistor, including the nanopatch graphene composite of the invention, is transparent and has high mechanical durability, thus exhibiting device stability, and the molecular alignment of the organic semiconductor layer growing on the nanopatch graphene composite is induced so as to become favorable for charge injection, thereby increasing the performance of the device.