公开(公告)号：US10978595B2

公开(公告)日：2021-04-13

申请号：US16364566

申请日：2019-03-26

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Sanghoon Baek ,  Sungjune Jung ,  Jimin Kwon ,  Geunyeol Bae ,  Kilwon Cho

IPC: H01L29/84 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

Abstract: Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.