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    Display System with Single Crystal Si Thin Film Transistors
    1.
    发明申请
    Display System with Single Crystal Si Thin Film Transistors 有权
    具有单晶Si薄膜晶体管的显示系统

    公开(公告)号：US20100259517A1

    公开(公告)日：2010-10-14

    申请号：US12823547

    申请日：2010-06-25

    申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    IPC分类号： G06F3/038 ,  G02F1/136

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Display system with single crystal SI thin film transistors
    2.
    发明授权
    Display system with single crystal SI thin film transistors 有权
    具有单晶SI薄膜晶体管的显示系统

    公开(公告)号：US07768611B2

    公开(公告)日：2010-08-03

    申请号：US11893594

    申请日：2007-08-16

    申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    IPC分类号： G02F1/1343 ,  G02F1/1339

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Display system with single crystal Si thin film transistors
    3.
    发明授权
    Display system with single crystal Si thin film transistors 有权
    具有单晶Si薄膜晶体管的显示系统

    公开(公告)号：US08072406B2

    公开(公告)日：2011-12-06

    申请号：US12823547

    申请日：2010-06-25

    申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    IPC分类号： G09G3/36

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Bonding pad for gallium nitride-based light-emitting device
    4.
    发明授权
    Bonding pad for gallium nitride-based light-emitting device 失效
    用于氮化镓基发光器件的接合焊盘

    公开(公告)号：US07002180B2

    公开(公告)日：2006-02-21

    申请号：US10187468

    申请日：2002-06-28

    申请人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

    发明人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

    IPC分类号： H01L27/15

    CPC分类号： H01L33/40

    摘要： A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

    摘要翻译： 用于电极的焊盘与包括铝的p型氮化镓基半导体材料接触。 接合焊盘还可以包括一种或多种选自钯，铂，镍和金的金属。 接合焊盘可以用于在诸如发光二极管或激光二极管的半导体器件中的p电极上附接接合线，而不会导致电极的光透射和欧姆特性的劣化。 接合焊盘可以与与n型氮化镓基半导体材料（n电极）欧姆接触的与电极基本相同的材料形成。 这允许在制造基本上降低制造器件的成本的氮化镓基发光器件时同时形成焊盘和n电极。

    Electrode for p-type gallium nitride-based semiconductors
    6.
    发明授权
    Electrode for p-type gallium nitride-based semiconductors 失效
    p型氮化镓基半导体电极

    公开(公告)号：US06734091B2

    公开(公告)日：2004-05-11

    申请号：US10187465

    申请日：2002-06-28

    申请人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

    发明人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

    IPC分类号： H01L2128

    CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/32

    摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

    摘要翻译： 公开了一种用于p型氮化镓基半导体材料的改进的电极，其包括氧化金属层和金属材料的第一和第二层。 电极通过在p型半导体层上沉积三个或更多个金属层而形成，使得至少一个金属层与p型半导体层接触。 然后至少两个金属层在氧的存在下进行退火处理以氧化至少一个金属层以形成金属氧化物。 电极为p型氮化镓基半导体材料提供良好的欧姆接触，从而降低氮化镓基半导体器件的工作电压。

    Quantum-well diode laser
    7.
    发明授权
    Quantum-well diode laser 失效
    量子阱二极管激光器

    公开(公告)号：US5251225A

    公开(公告)日：1993-10-05

    申请号：US880622

    申请日：1992-05-08

    申请人： Stephen J. Eglash ,  Hong K. Choi

    发明人： Stephen J. Eglash ,  Hong K. Choi

    IPC分类号： H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34306

    摘要： A GaInAsSb quantum-well laser for highly efficient conversion of input energy to output infrared light is described. The laser consists of an MBE grown active region formed of a plurality of GaInAsSb quantum-well layers separated by AlGaAsSb barrier layers. The active region is sandwiched between AlGaAsSb cladding layers in which the Al content is greater than the Al content in the barrier layers.

    摘要翻译： 描述了用于将输入能量高效转换成输出红外光的GaInAsSb量子阱激光器。 激光器由由AlGaAsSb阻挡层分离的多个GaInAsSb量子阱层形成的MBE生长的有源区组成。 有源区夹在其中Al含量大于势垒层中的Al含量的AlGaAsSb包覆层之间。

    Process for producing .alpha.-L-aspartyl-L-phenylalanine methyl ester
    9.
    发明授权
    Process for producing .alpha.-L-aspartyl-L-phenylalanine methyl ester 失效
    制备α-L-天冬氨酰-L-苯丙氨酸甲酯的方法

    公开(公告)号：US5334746A

    公开(公告)日：1994-08-02

    申请号：US161437

    申请日：1993-12-06

    申请人： Kyung S. Choi ,  Dae K. Joo ,  Min S. Han ,  E Nam Hwang ,  Hong K. Choi

    发明人： Kyung S. Choi ,  Dae K. Joo ,  Min S. Han ,  E Nam Hwang ,  Hong K. Choi

    IPC分类号： C07C227/18 ,  C07K5/075 ,  C07C229/00

    CPC分类号： C07C227/18 ,  C07K5/0613

    摘要： A process for the preparation of .alpha.-L-aspartyl-L-phenylalanine methyl ester in high yield, which comprises the steps of esterifying L-phenylalanine with methanol while undergoing continuous evaporation to remove the water formed during esterification, coupling the produced L-phenylalanine methyl ester with N-formyl-L-aspartic anhydride, deformylating the produced N-formyl-L-aspartyl-L-phenylalanine methyl ester, crystallizing the formed .alpha.-L-aspartyl-L-phenylalanine methyl ester as .alpha.-L-aspartyl-L-phenylalanine methyl ester hydrochloric acid salt, recovering the first .alpha.-L-aspartyl-L-phenylalanine methyl ester hydrochloric acid salt, esterifying .alpha.-L-aspartyl-L-phenylalanine in the filtrate to produce the second .alpha.-L-aspartyl-L-phenylalanine methyl ester, and combining the first and second .alpha.-L-aspartyl-L-phenylalanine methyl ester product.

    摘要翻译： 一种以高产率制备α-L-天冬氨酰基-L-苯丙氨酸甲酯的方法，其包括以下步骤：在连续蒸发下用甲醇酯化L-苯丙氨酸以除去在酯化期间形成的水，将生成的L-苯丙氨酸 甲基酯与N-甲酰基-L-天冬氨酸酐反应，使生成的N-甲酰基-L-天冬氨酰基-L-苯丙氨酸甲酯变形，使形成的α--L-天冬氨酰基-L-苯丙氨酸甲酯结晶为α-L-天冬氨酰 - L-苯丙氨酸甲酯盐酸盐，回收第一个α-L-天冬氨酰基-L-苯丙氨酸甲酯盐酸盐，在滤液中酯化α-L-天冬氨酰基-L-苯丙氨酸，产生第二个α-L-天冬氨酰基 - L-苯丙氨酸甲酯，并将第一和第二α-L-天冬氨酰基-L-苯丙氨酸甲酯产物混合。