公开(公告)号：US5251225A

公开(公告)日：1993-10-05

申请号：US880622

申请日：1992-05-08

申请人： Stephen J. Eglash ,  Hong K. Choi

发明人： Stephen J. Eglash ,  Hong K. Choi

IPC分类号： H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34306

摘要： A GaInAsSb quantum-well laser for highly efficient conversion of input energy to output infrared light is described. The laser consists of an MBE grown active region formed of a plurality of GaInAsSb quantum-well layers separated by AlGaAsSb barrier layers. The active region is sandwiched between AlGaAsSb cladding layers in which the Al content is greater than the Al content in the barrier layers.

摘要翻译： 描述了用于将输入能量高效转换成输出红外光的GaInAsSb量子阱激光器。 激光器由由AlGaAsSb阻挡层分离的多个GaInAsSb量子阱层形成的MBE生长的有源区组成。 有源区夹在其中Al含量大于势垒层中的Al含量的AlGaAsSb包覆层之间。

公开(公告)号：US5315608A

公开(公告)日：1994-05-24

申请号：US916467

申请日：1992-07-17

申请人： Hong K. Choi ,  Stephen J. Eglash ,  Tso Y. Fan ,  C. David Nabors

发明人： Hong K. Choi ,  Stephen J. Eglash ,  Tso Y. Fan ,  C. David Nabors

IPC分类号： H01S5/343 ,  H01S3/16

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34306

摘要： An eye-safe short pulse room-temperature solid state laser emitting at about 2.1 microns is optically pumped by diode lasers emitting at about 1.9 microns Absorption spectra of Ho ions in YAG (Yttrium Aluminum Garnet) and YLF (Yttrium Lithium Fluoride) host crystals are described. Optical pumping is performed by high-power diode lasers emitting at about 1.91 microns consisting of a GaInAsSb/AlGaAsSb quantum-well active region and AlGaAsSb cladding layers grown on GaSb substrates.

摘要翻译： 在约2.1微米处发射的眼睛安全的短脉冲室温固态激光器通过以约1.9微米发射的二极管激光器进行光泵浦.YAG（钇铝石榴石）和YLF（钇氟化锂）主体晶体中的Ho离子的吸收光谱为 描述。 光泵浦由在大约1.91微米处发射的大功率二极管激光器执行，该激光器由GaInBb / AlGaAsSb量子阱有源区和在GaSb衬底上生长的AlGaAsSb覆层组成。

公开(公告)号：US08072406B2

公开(公告)日：2011-12-06

申请号：US12823547

申请日：2010-06-25

申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

IPC分类号： G09G3/36

CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

公开(公告)号：US20100259517A1

公开(公告)日：2010-10-14

申请号：US12823547

申请日：2010-06-25

申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

IPC分类号： G06F3/038 ,  G02F1/136

CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

公开(公告)号：US07768611B2

公开(公告)日：2010-08-03

申请号：US11893594

申请日：2007-08-16

申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

IPC分类号： G02F1/1343 ,  G02F1/1339

CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

公开(公告)号：US07002180B2

公开(公告)日：2006-02-21

申请号：US10187468

申请日：2002-06-28

申请人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

发明人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

IPC分类号： H01L27/15

CPC分类号： H01L33/40

摘要： A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

摘要翻译： 用于电极的焊盘与包括铝的p型氮化镓基半导体材料接触。 接合焊盘还可以包括一种或多种选自钯，铂，镍和金的金属。 接合焊盘可以用于在诸如发光二极管或激光二极管的半导体器件中的p电极上附接接合线，而不会导致电极的光透射和欧姆特性的劣化。 接合焊盘可以与与n型氮化镓基半导体材料（n电极）欧姆接触的与电极基本相同的材料形成。 这允许在制造基本上降低制造器件的成本的氮化镓基发光器件时同时形成焊盘和n电极。

公开(公告)号：US5409830A

公开(公告)日：1995-04-25

申请号：US263493

申请日：1994-06-21

申请人： Byung L. Lim ,  Hong Rhym ,  Jin H. Lee ,  Tae Y. Choi ,  E. Nam Hwang ,  Hong K. Choi

发明人： Byung L. Lim ,  Hong Rhym ,  Jin H. Lee ,  Tae Y. Choi ,  E. Nam Hwang ,  Hong K. Choi

IPC分类号： C12P13/22 ,  C12N1/20

CPC分类号： C12P13/22 ,  C12R1/19 ,  Y10S435/849

摘要： A novel E. coli strain which can produce L-phenylalanine and is resistant to high osmotic pressure and a process for producing L-phenylalanine by use of the novel E. coli (KCCM 10,016) are disclosed.

摘要翻译： 公开了一种能够生产L-苯丙氨酸并具有高渗透压的新型大肠杆菌菌株和使用新型大肠杆菌（KCCM10,016）生产L-苯丙氨酸的方法。

公开(公告)号：US5334746A

公开(公告)日：1994-08-02

申请号：US161437

申请日：1993-12-06

申请人： Kyung S. Choi ,  Dae K. Joo ,  Min S. Han ,  E Nam Hwang ,  Hong K. Choi

发明人： Kyung S. Choi ,  Dae K. Joo ,  Min S. Han ,  E Nam Hwang ,  Hong K. Choi

IPC分类号： C07C227/18 ,  C07K5/075 ,  C07C229/00

CPC分类号： C07C227/18 ,  C07K5/0613

摘要： A process for the preparation of .alpha.-L-aspartyl-L-phenylalanine methyl ester in high yield, which comprises the steps of esterifying L-phenylalanine with methanol while undergoing continuous evaporation to remove the water formed during esterification, coupling the produced L-phenylalanine methyl ester with N-formyl-L-aspartic anhydride, deformylating the produced N-formyl-L-aspartyl-L-phenylalanine methyl ester, crystallizing the formed .alpha.-L-aspartyl-L-phenylalanine methyl ester as .alpha.-L-aspartyl-L-phenylalanine methyl ester hydrochloric acid salt, recovering the first .alpha.-L-aspartyl-L-phenylalanine methyl ester hydrochloric acid salt, esterifying .alpha.-L-aspartyl-L-phenylalanine in the filtrate to produce the second .alpha.-L-aspartyl-L-phenylalanine methyl ester, and combining the first and second .alpha.-L-aspartyl-L-phenylalanine methyl ester product.

摘要翻译： 一种以高产率制备α-L-天冬氨酰基-L-苯丙氨酸甲酯的方法，其包括以下步骤：在连续蒸发下用甲醇酯化L-苯丙氨酸以除去在酯化期间形成的水，将生成的L-苯丙氨酸 甲基酯与N-甲酰基-L-天冬氨酸酐反应，使生成的N-甲酰基-L-天冬氨酰基-L-苯丙氨酸甲酯变形，使形成的α--L-天冬氨酰基-L-苯丙氨酸甲酯结晶为α-L-天冬氨酰 - L-苯丙氨酸甲酯盐酸盐，回收第一个α-L-天冬氨酰基-L-苯丙氨酸甲酯盐酸盐，在滤液中酯化α-L-天冬氨酰基-L-苯丙氨酸，产生第二个α-L-天冬氨酰基 - L-苯丙氨酸甲酯，并将第一和第二α-L-天冬氨酰基-L-苯丙氨酸甲酯产物混合。

公开(公告)号：US06881983B2

公开(公告)日：2005-04-19

申请号：US10207649

申请日：2002-07-26

申请人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

发明人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

公开(公告)号：US06479313B1

公开(公告)日：2002-11-12

申请号：US09866442

申请日：2001-05-25

申请人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

发明人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  H01L21/2683 ,  H01L21/3245 ,  H01L33/0095

摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

摘要翻译： 用x射线辐射照射化合物半导体材料以活化掺杂剂材料。 主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。 该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。 该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。