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    Array substrate and manufacturing method thereof, display substrate, and display device
    1.
    发明授权
    Array substrate and manufacturing method thereof, display substrate, and display device 有权

    公开(公告)号：US11244969B2

    公开(公告)日：2022-02-08

    申请号：US16509548

    申请日：2019-07-12

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Xueyan Tian ,  Zheng Liu ,  Shuai Zhang

    IPC: H01L27/12 ,  H01L27/32 ,  H01L23/498 ,  H01L51/00 ,  H01L51/56

    Abstract: The present disclosure discloses an array substrate, a manufacturing method thereof, a display substrate, and a display device, belonging to the technical field of display. The array substrate includes: a flexible base, and, a TFT and a connecting line which are on a side of the flexible base. The array substrate has a display area and a lead area. The TFT is in the display area. The connecting line is in the lead area. The connecting line is used to electrically connect the TFT to a drive circuit. A manufacturing material of the connecting line includes a flexible conductive material. Since the material forming the connecting line includes a flexible conductive material, and the flexible conductive material has electrical conductivity and is not easily broken, the breaking probability of the connecting line is reduced, and the yield of the display device is effectively improved.

    Low temperature polycrystalline silicon TFT array substrate and method of producing the same, display apparatus
    3.
    发明授权
    Low temperature polycrystalline silicon TFT array substrate and method of producing the same, display apparatus 有权

    公开(公告)号：US09947697B2

    公开(公告)日：2018-04-17

    申请号：US14769891

    申请日：2014-09-30

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Chunping Long ,  Yinan Liang ,  Zheng Liu ,  Zuqiang Wang ,  Xueyan Tian

    IPC: H01L27/12 ,  H01L27/32

    CPC classification number: H01L27/1288 ,  H01L27/1255 ,  H01L27/3262 ,  H01L2227/323

    Abstract: The present disclosure provides a low temperature polycrystalline silicon field effect TFT array substrate and a method for producing the same and a display apparatus. The method: using a stepped photo resist process to form a polycrystalline silicon active layer and a lower polar plate of a polycrystalline silicon storage capacitor simultaneously on a substrate in one lithographic process; forming a gate insulation layer on the polycrystalline silicon active layer and the lower polar plate of the polycrystalline silicon storage capacitor; forming a metal layer on the gate insulation layer and etching the metal layer to form a gate electrode and gate lines connected with the gate electrode, a source electrode, a drain electrode and data lines connected with the source electrode and the drain electrode; forming a passivation layer, a photo resist layer and a pixel electrode layer in sequence and patterning the passivation layer, the photo resist layer and the pixel electrode layer to form patterns of an interlayer insulation layer via hole and a pixel electrode in one lithographic process; forming a pixel definition layer on the pixel electrode. The present disclosure may reduce times of lithographic processes for the low temperature polycrystalline silicon field effect TFT array substrate, improve the yield and reduce the costs.

    LASER ANNEALING DEVICE, PRODUCTION PROCESS OF POLYCRYSTALLINE SILICON THIN FILM, AND POLYCRYSTALLINE SILICON THIN FILM PRODUCED BY THE SAME
    4.
    发明申请
    LASER ANNEALING DEVICE, PRODUCTION PROCESS OF POLYCRYSTALLINE SILICON THIN FILM, AND POLYCRYSTALLINE SILICON THIN FILM PRODUCED BY THE SAME 有权
    激光退火装置，多晶硅薄膜的生产工艺及其生产的多晶硅薄膜

    公开(公告)号：US20160254151A1

    公开(公告)日：2016-09-01

    申请号：US14761998

    申请日：2014-12-29

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Xueyan Tian

    IPC: H01L21/02 ,  H01L27/12 ,  B23K26/00 ,  H01L21/67

    CPC classification number: H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/127 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/0268 ,  H01L21/02683 ,  H01L21/268 ,  H01L21/67115 ,  H01L27/1274

    Abstract: The invention relates to the field of laser annealing, and discloses a laser annealing device, a production process of a polycrystalline silicon thin film, and a polycrystalline silicon thin film produced by the same. The laser annealing device comprises an annealing chamber, in which a laser generator is provided, wherein an annealing window, through which the laser passes, and two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein the light-cutting end face of each of the light-cutting plates is a wedge-shaped end face. In technical solutions of the invention, since the light-cutting end face is a wedge-shaped end face, the included angle formed by the reflected beam, which is formed by the reflection of the incident beam arriving at the light-cutting end face, and the ingoing beam, which passes through the annealing window, is relatively large, and the vibrating directions of them differ relatively greatly. Hence, the phenomenon of interference will hardly occur, and thus the interference mura generated on the polycrystalline silicon thin film due to the interference is reduced, the quality of the polycrystalline silicon thin film is improved, and the percent of pass of the product is also increased.

    Abstract translation: 本发明涉及激光退火领域，并且公开了一种激光退火装置，多晶硅薄膜的制造方法及其制造的多晶硅薄膜。 激光退火装置包括退火室，其中提供激光发生器，其中激光通过的退火窗和在退火窗上方相对设置的两个光切割板也设置在退火室中，其中， 每个光切割板的切光端面是楔形端面。 在本发明的技术方案中，由于光切割端面是楔形端面，所以通过入射光束到达光切割端面的反射形成的由反射光束形成的夹角， 并且通过退火窗的进入梁相对较大，并且它们的振动方向相差较大。 因此，几乎不会发生干涉现象，从而降低了由于干涉而在多晶硅薄膜上产生的干涉，提高了多晶硅薄膜的质量，并且产品的通过百分比也是 增加。

    Glossy display panel, manufacturing method thereof and display device
    5.
    发明授权
    Glossy display panel, manufacturing method thereof and display device 有权

    公开(公告)号：US12080726B2

    公开(公告)日：2024-09-03

    申请号：US17265742

    申请日：2020-04-30

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Xueyan Tian ,  Jianchao Zhu ,  Libin Liu ,  Liangjian Li ,  Caiyu Qu ,  Dengyun Chen ,  Ximeng Li

    IPC: H01L27/12 ,  H01L27/02 ,  H10K59/131

    CPC classification number: H01L27/1259 ,  H01L27/0292 ,  H01L27/124 ,  H10K59/131

    Abstract: A glossy display panel, a manufacturing method thereof and a display device are provided. The glossy display panel includes a display area and a non-display area; wherein the non-display area includes a binding area, and the glossy display panel includes a first conductive pattern located on a base substrate and located in the binding area; a first insulating layer covering the first conductive pattern, wherein the first insulating layer is provided with a first via hole, and an orthographic projection of the first via hole onto the base substrate is located within an orthographic projection of the first conductive pattern onto the base substrate; a glossy reflection layer, wherein an orthographic projection of the glossy reflection layer onto the base substrate does not overlap with an orthographic projection of the binding area onto the base substrate; and a chip on film.

    Display substrate assembly and method of manufacturing the same, and display apparatus
    6.
    发明授权
    Display substrate assembly and method of manufacturing the same, and display apparatus 有权

    公开(公告)号：US11302761B2

    公开(公告)日：2022-04-12

    申请号：US16631002

    申请日：2019-07-25

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Xueyan Tian ,  Caiyu Qu ,  Zheng Liu ,  Xinshe Yin

    IPC: H01L27/32 ,  H01L21/02 ,  H01L29/06

    Abstract: In an embodiment, there is provided a display substrate assembly. The display substrate assembly includes: a base substrate; a light-shielding layer on the base substrate, the light-shielding layer having a plurality of light-shielding elements; and a plurality of polysilicon layers respectively on sides of the plurality of light-shielding elements away from the base substrate; wherein the plurality of light-shielding elements have different sizes such that energy lights reflected and/or refracted through the plurality of light-shielding elements of different sizes respectively generate different thermal energy distributions on the plurality of polysilicon layers corresponding to the plurality of light-shielding elements, causing the plurality of polysilicon layers to have different crystal forms. Meanwhile, a method of manufacturing the display substrate assembly and a display apparatus including the aforementioned display substrate assembly are also provided.

    Carbon nanotube thin film transistor and manufacturing method thereof
    7.
    发明授权
    Carbon nanotube thin film transistor and manufacturing method thereof 有权

    公开(公告)号：US10205109B2

    公开(公告)日：2019-02-12

    申请号：US15518664

    申请日：2016-09-19

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Xueyan Tian

    IPC: H01L51/05 ,  H01L29/66 ,  H01L29/786 ,  H01L51/00

    Abstract: A carbon nanotube thin film transistor and a manufacturing method thereof are provided in the embodiments of the present disclosure. The carbon nanotube thin film transistor includes: a base substrate; a gate electrode, a semiconductor layer, a source electrode and a drain electrode, which are disposed on the base substrate, the semiconductor layer includes a poly(3-hexylthiophene) layer and a mixing layer of semiconducting carbon nanotube and poly(3-hexylthiophene) which are stacked. The semiconducting carbon nanotube thin film transistor has a high purity, thus the metallic carbon nanotubes are substantially cleared out and the electrical property of the thin film transistor is ensured, so that the manufactured carbon nanotube thin film transistor has good electrical properties.

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