公开(公告)号：US09633844B2

公开(公告)日：2017-04-25

申请号：US13703122

申请日：2012-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L27/12 ,  H01L21/321

CPC classification number: H01L21/02675 ,  H01L21/02436 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02664 ,  H01L21/02686 ,  H01L21/32115 ,  H01L27/1285

Abstract: Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can include: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film.

公开(公告)号：US20140065804A1

公开(公告)日：2014-03-06

申请号：US13980478

申请日：2012-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC: H01L21/02

CPC classification number: H01L21/02502 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/32055

Abstract: An embodiment of the present invention relates to a low temperature polysilicon thin film and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer on a substrate (S11); forming a seed layer comprising a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process (S12); forming an amorphous silicon layer on the seed layer (S13); and performing an excimer laser annealing process on the amorphous silicon layer (S14).

Abstract translation: 本发明的实施例涉及一种低温多晶硅薄膜及其制造方法。 制造方法包括：在基板上形成缓冲层（S11）; 通过图案化工艺在缓冲层上形成包含多个均匀分布的晶核的晶种层（S12）; 在籽晶层上形成非晶硅层（S13）; 对非晶硅层进行准分子激光退火处理（S14）。

公开(公告)号：US08940625B2

公开(公告)日：2015-01-27

申请号：US13980478

申请日：2012-12-10

Applicant: Boe Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC: H01L21/20 ,  H01L21/02 ,  C23C16/24 ,  H01L21/268 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/56

CPC classification number: H01L21/02502 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/32055

Abstract: An embodiment of the present invention relates to a low temperature polysilicon thin film and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer on a substrate (S11); forming a seed layer comprising a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process (S12); forming an amorphous silicon layer on the seed layer (S13); and performing an excimer laser annealing process on the amorphous silicon layer (S14).

Abstract translation: 本发明的实施例涉及一种低温多晶硅薄膜及其制造方法。 制造方法包括：在基板上形成缓冲层（S11）; 通过图案化工艺在缓冲层上形成包含多个均匀分布的晶核的晶种层（S12）; 在籽晶层上形成非晶硅层（S13）; 对非晶硅层进行准分子激光退火处理（S14）。