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1.发明授权Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 失效一种集成半导体器件，包括化学耐化学气体微传感器及其制造方法
公开(公告)号：US6051854A
公开(公告)日：2000-04-18
申请号：US89816
申请日：1998-06-03
CPC分类号： G01N27/12
摘要： An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.
摘要翻译： 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径，用于由加热器元件产生的热量，从而在器件的操作期间向基板分散的热量可忽略。
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2.发明授权Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 有权一种集成半导体器件，包括化学耐化学气体微传感器及其制造方法公开(公告)号：US06248609B1
公开(公告)日：2001-06-19
申请号：US09506414
申请日：2000-02-17
IPC分类号： H01L2100
CPC分类号： G01N27/12
摘要： An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.
摘要翻译： 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径，用于由加热器元件产生的热量，从而在器件的操作期间向基板分散的热量可忽略。
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公开(公告)号：US6003374A
公开(公告)日：1999-12-21
申请号：US925599
申请日：1997-09-08
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01P15/11 , H01L29/84
CPC分类号： G01P15/11
摘要： An acceleration sensor is described which is formed by planar technology on a substrate. It includes a core of ferromagnetic material and, coupled conductively together by the core, a first winding adapted to be connected to a power supply and a second winding adapted to be connected to circuit means for measuring an electrical magnitude induced therein. The core has two suspended portions which are free to bend as a result of an inertial force due to an accelerative movement of the sensor itself. The bending causes lengthening of the core and hence a variation in the reluctance of the magnetic circuit. If a constant current is supplied to the first winding, a voltage is induced in the second winding as a result of the variation in the magnetic flux caused by the variation in reluctance.
摘要翻译： 描述了通过在基板上的平面技术形成的加速度传感器。 它包括一个铁磁材料的核心，并且通过芯体导电地耦合在一起，适于连接到电源的第一绕组和适于连接到电路装置的第二绕组，该电路装置用于测量在其中感应的电气量。 芯具有由于传感器本身的加速运动而由于惯性力而自由弯曲的两个悬挂部分。 弯曲导致芯的延长，从而导致磁路的磁阻变化。 如果向第一绕组提供恒定电流，则由于磁阻变化引起的磁通量的变化，在第二绕组中产生电压。
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公开(公告)号：US20050009300A1
公开(公告)日：2005-01-13
申请号：US10893021
申请日：2004-07-16
IPC分类号： H01L23/31 , H01L23/36 , H01L23/373 , H01L23/482 , H01L21/44
CPC分类号： H01L24/01 , H01L23/3157 , H01L23/36 , H01L23/3735 , H01L23/4827 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082
摘要： The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
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公开(公告)号：US06969637B2
公开(公告)日：2005-11-29
申请号：US10893021
申请日：2004-07-16
IPC分类号： H01L23/31 , H01L23/36 , H01L23/373 , H01L23/482 , H01L21/44 , H01L21/301 , H01L21/46 , H01L21/48 , H01L21/50
CPC分类号： H01L24/01 , H01L23/3157 , H01L23/36 , H01L23/3735 , H01L23/4827 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082
摘要： The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
摘要翻译： 电子器件形成在包括半导体材料体的模具中，该半导体材料体具有被覆盖结构覆盖的第一面和第二面。 在切割成骰子之前，在制造晶片期间，金属的整体散热器在第二面上电镀生长。 覆盖结构包括钝化区域和不透明聚酰亚胺的保护区域; 保护区域和钝化区域在接触焊盘上方打开以引导引线通过。
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6.发明授权Method of producing suspended elements for electrical connection between two portions of a micromechanism which can move relative to one another 有权制造可以相对于彼此移动的微机构的两个部分之间的电连接的悬挂元件的方法公开(公告)号：US06779247B1
公开(公告)日：2004-08-24
申请号：US09676017
申请日：2000-09-29
IPC分类号： G11B5127
CPC分类号： G11B7/22 , G11B5/53 , G11B7/122 , Y10T29/49021 , Y10T29/49041
摘要： A method of producing suspended elements for electrical connection between two portions of a micro-mechanism that can move relative to one another provides for the formation of a layer of sacrificial material, the formation of the electrical connection elements on the layer of sacrificial material, and the selective removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film with at least one adhesive side that can be applied dry to the surface of the micro-mechanism.
摘要翻译： 一种用于在微机构的两部分之间进行电连接的悬挂元件的制造方法，该微机构可以相对于彼此移动，从而形成牺牲材料层，在牺牲材料层上形成电连接元件，以及 选择性地去除电连接元件下面的牺牲材料层，牺牲材料层是具有至少一个可以干燥地施加到微机构表面的粘合剂侧的薄膜。
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7.发明授权Process for manufacturing integrated semiconductor devices comprising a chemoresistive gas microsensor 有权用于制造包括化学耐药性微量传感器的集成半导体器件的方法公开(公告)号：US06326229B1
公开(公告)日：2001-12-04
申请号：US09405893
申请日：1999-09-24
IPC分类号： H01L2100
CPC分类号： G01N27/12
摘要： To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region of metallic material, formed at the same time and on the same level as metallic connection regions for the sensor, a heater element, electrically and physically separated from the sacrificial region and a gas sensitive element, electrically and physically separated from the heater element; openings are formed laterally with respect to the heater element and to the gas sensitive element, which extend as far as the sacrificial region and through which the sacrificial region is removed at the end of the manufacturing process.
摘要翻译： 为了制造包括化学耐化学气体微传感器的集成半导体器件，首先形成半导体材料体，在半导体材料体上依次形成与金属连接同时形成的金属材料的牺牲区域， 用于传感器的区域，与牺牲区电气和物理分离的加热器元件和气体敏感元件，与加热器元件电和物理分离; 开口相对于加热器元件和气体敏感元件横向形成，气体敏感元件延伸到牺牲区域并且在制造过程结束时除去牺牲区域。
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8.发明授权Method for the electrical and/or mechanical interconnection of components of a microelectronic system 有权用于微电子系统的部件的电和/或机械互连的方法公开(公告)号：US06423938B1
公开(公告)日：2002-07-23
申请号：US09662984
申请日：2000-09-15
IPC分类号： H05B100
CPC分类号： H01L24/81 , H01L23/345 , H01L24/98 , H01L2224/05568 , H01L2224/05573 , H01L2224/16148 , H01L2224/81191 , H01L2224/81192 , H01L2224/81234 , H01L2224/81815 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19043 , H01L2224/05599
摘要： A method for the electrical and/or mechanical interconnection of components of a microelectronic system includes at least one first component and at least one second component to be connected, and at least one local Joule-effect micro-heater is incorporated in one of the first and second components at a respective soldering point therebetween. The method includes supplying electrical energy to the micro-heater to utilize the heat produced therefrom by the Joule effect to solder the first and second components at the respective soldering point.
摘要翻译： 用于微电子系统的部件的电和/或机械互连的方法包括至少一个第一部件和要连接的至少一个第二部件，并且至少一个局部焦耳效应微加热器被并入第一部件 和在它们之间的相应焊接点处的第二部件。 该方法包括向微加热器提供电能以利用焦耳效应产生的热量来在相应焊接点处焊接第一和第二部件。
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公开(公告)号：US06784522B2
公开(公告)日：2004-08-31
申请号：US09874381
申请日：2001-06-04
IPC分类号： H01L2972
CPC分类号： H01L24/01 , H01L23/3157 , H01L23/36 , H01L23/3735 , H01L23/4827 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082
摘要： The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
摘要翻译： 电子器件形成在包括半导体材料体的模具中，该半导体材料体具有被覆盖结构覆盖的第一面和第二面。 在切割成骰子之前，在制造晶片期间，金属的整体散热器在第二面上电镀生长。 覆盖结构包括钝化区域和不透明聚酰亚胺的保护区域; 保护区域和钝化区域在接触焊盘上方打开以引导引线通过。
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10.发明授权Method for assembling an actuator device for a hard disk, comprising a read/write transducer, a microactuator, and a suspension, and the actuator device thus obtained 有权组装用于硬盘的致动器装置的方法，包括读/写换能器，微致动器和悬架，以及由此获得的致动器装置公开(公告)号：US06501623B1
公开(公告)日：2002-12-31
申请号：US09357078
申请日：1999-07-20
IPC分类号： G11B555
CPC分类号： G11B5/5552 , G11B5/11
摘要： A microactuator is attached to a first face of a coupling formed on a suspension, so that an R/W transducer projects from an opposite face. A hole in the coupling permits passage of an adhesive mass interposed between a rotor of the microactuator and the R/W transducer. A strip of adhesive material extends between a die accommodating the microactuator and the coupling, and externally surrounds the microactuator. The coupling acts as a protective shield for the microactuator, both mechanically and electrically. The coupling covers the microactuator at the front, and prevents foreign particles from blocking the microactuator. In addition, the coupling electrically insulates the R/W transducer, which is sensitive to magnetic fields, from regions of the microactuator biased to a high voltage. With the coupling, the strip forms a sealing structure, which in practice surrounds the microactuator on all sides.
摘要翻译： 微型致动器附接到形成在悬架上的联接器的第一面上，使得R / W传感器从相对的面突出。 联接器中的孔允许插入在微致动器的转子和R / W换能器之间的粘合剂块的通过。 一条粘合剂材料在容纳微型致动器的模具和联接器之间延伸，并且外部包围微型致动器。 联轴器作为微型致动器的机械和电气保护屏蔽。 联轴器覆盖前部的微型致动器，并防止外来颗粒堵塞微型致动器。 另外，该耦合将对磁场敏感的R / W传感器与微型制动器的偏压高电压绝缘。 通过联接，条带形成密封结构，实际上围绕着所有侧面上的微致动器。
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