公开(公告)号：US20220236600A1

公开(公告)日：2022-07-28

申请号：US17472711

申请日：2021-09-13

Applicant: Beijing BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Xiaoxiang ZHANG ,  Xiaolong LI ,  Yihe JIA ,  Lianjie YANG ,  Xiangqian DING ,  Yongzhi SONG

IPC: G02F1/1343 ,  G02F1/1333

Abstract: Provided is a display substrate, a manufacturing method thereof and a display panel. The display substrate includes a base substrate, a display region and a bonding region located at a side of the display region on the base substrate, wherein the bonding region includes a first protective layer and a bonding electrode disposed on the base substrate; the first protective layer is provided with a groove; the bonding electrode is at least partially disposed in the groove; in a direction parallel to the base substrate, the groove, the bonding electrode and the first protective layer extend to an edge of the bonding region in a direction away from the display region; and a material of the first protective layer is less hard than a material of the bonding electrode.

公开(公告)号：US20210356856A1

公开(公告)日：2021-11-18

申请号：US16343756

申请日：2018-10-26

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoxiang ZHANG ,  Mingxuan LIU ,  Huibin GUO ,  Yongzhi SONG ,  Xiaolong LI ,  Wenqing XU ,  Zumou WU

IPC: G03F1/32 ,  H01L21/027

Abstract: A phase shift mask includes a transparent substrate and light-shielding portions. The light-shielding portions include a first light-shielding portion, and over one side of it, a first compensating light-shielding portion, which has a first distance to the first light-shielding portion and a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask. The light-shielding portions can further include a second compensating light-shielding portion, having a second distance to another side of the first light-shielding portion and a second width smaller than the resolution of the exposing machine. The first distance and the second distance respectively allow the first and the second compensating light-shielding portion to reduce an exposure at a region corresponding to two sides of the first light-shielding portion during the exposure process. A method manufacturing an electronic component utilizing the phase shift mask is also provided.

公开(公告)号：US20210110759A1

公开(公告)日：2021-04-15

申请号：US16970818

申请日：2019-10-12

Applicant: BOE Technology Group Co,, Ltd.

Inventor： Wei QIN ,  Weixing LIU ,  Tieshi WANG ,  Kai GUO ,  Xiaolong LI ,  Kuanjun PENG ,  Zhiqiang XU ,  Wanpeng TENG

IPC: G09G3/32 ,  G09G3/20

Abstract: An embodiment of the present disclosure provides a driving circuit, a driving method thereof, a display panel and a display device. The driving circuit includes a first transistor electrically connected between a signal input terminal and a light emitting device to be driven, a duration control circuit configured to provide a signal of a duration data signal terminal to a gate of the first transistor in response to a signal of a duration scanning signal terminal, and a latch circuit electrically connected with the gate of the first transistor and configured to latch the signal of the gate of the first transistor.

公开(公告)号：US20200090591A1

公开(公告)日：2020-03-19

申请号：US16616234

申请日：2019-04-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tieshi WANG ,  Kuanjun PENG ,  Wei QIN ,  Chengchung YANG ,  Xueling GAO ,  Xiaolong LI ,  Zhiqiang XU ,  Yan WEI ,  Shengnan LI

IPC: G09G3/3258

Abstract: A pixel driving circuit, a driving method and a display device are provided. The pixel driving circuit includes a driving unit, a capacitor unit, a data write-in unit connected to a corresponding gate line, a corresponding data line and the driving unit, a power source control unit connected to a first light-emitting control end, a power source signal input end and the driving unit, and a first light-emitting control unit connected to a second light-emitting control end, the power source signal input end and the driving unit and configured to, within a predetermined time period of a light-emitting stage, control the power source signal input end to be electrically connected to the driving unit under the control of the second light-emitting control end, stop the operation of the driving unit, and enable the light-emitting unit not to emit light.

公开(公告)号：US20190204663A1

公开(公告)日：2019-07-04

申请号：US16043773

申请日：2018-07-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangxiang ZOU ,  Zezhou YANG ,  Xiaolong LI

IPC: G02F1/1335 ,  G02F1/017

CPC classification number: G02F1/133509 ,  G02F1/017 ,  G02F1/133528 ,  G02F1/133555 ,  G02F2001/01791

Abstract: The present disclosure relates to a liquid crystal display panel, a display device, and a display method. The liquid crystal display panel includes: a first substrate and a second substrate opposed to each other; a liquid crystal layer located between the first substrate and the second substrate; and a quantum dot layer located on a side of the second substrate away from the liquid crystal layer, and including a plurality of quantum dots of different dimensions.

公开(公告)号：US20180337262A9

公开(公告)日：2018-11-22

申请号：US15116980

申请日：2015-10-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong LI ,  Zheng LIU ,  Xiaoyong LU ,  Dong LI ,  Chunping LONG

IPC: H01L29/66 ,  H01L21/20 ,  H01L27/12 ,  H01L21/265 ,  H01L29/06 ,  H01L21/28

CPC classification number: H01L29/66757 ,  H01L21/2026 ,  H01L21/265 ,  H01L21/28 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/06 ,  H01L29/78696

Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.

公开(公告)号：US20180331206A1

公开(公告)日：2018-11-15

申请号：US15543726

申请日：2016-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jian MIN ,  Xiaolong LI ,  Tao GAO ,  Liangjian LI ,  Zhengyin XU

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/027 ,  H01L21/30 ,  H01L29/36 ,  H01L29/786

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02675 ,  H01L21/0272 ,  H01L21/0274 ,  H01L21/3003 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/36 ,  H01L29/78618 ,  H01L29/78675

Abstract: The present application discloses a method of fabricating a polycrystalline silicon thin film transistor, the method including forming an amorphous silicon layer on a base substrate having a pattern corresponding to a polycrystalline silicon active layer of the thin film transistor; the amorphous silicon layer having a first region corresponding to a source electrode and drain electrode contact region in the polycrystalline silicon active layer and a second region corresponding to a channel region in the polycrystalline silicon active layer; forming a first dopant layer on a side of the second region distal to the base substrate; forming a second dopant layer on a side of the first region distal to the base substrate; and crystallizing the amorphous silicon layer, the first dopant layer, and the second dopant layer to form the polycrystalline silicon active layer, the polycrystalline silicon active layer being doped with a dopant of the first dopant layer in the second region and doped with a dopant of the second dopant layer in the first region during the step of crystallizing the amorphous silicon layer.

公开(公告)号：US20170236705A1

公开(公告)日：2017-08-17

申请号：US15518642

申请日：2016-01-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dong LI ,  Xiaoyong LU ,  Xiaolong LI ,  Zheng LIU ,  Shuai ZHANG ,  Yucheng CHAN ,  Chienhung LIU ,  Chunping LONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/0268 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L27/1222 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods thereof, and a display device. The manufacturing method of a low temperature poly-silicon thin film comprises steps of: forming an amorphous silicon thin film on a base; and performing a laser annealing process on the amorphous silicon thin film by using a mask plate to form a low temperature poly-silicon thin film, wherein the mask plate includes a transmissive region and a shielding region surrounding the transmissive region, and two sides of the shielding region adjacent to the transmissive region are in concave-convex shapes. Performance of the low temperature poly-silicon thin film formed by the manufacturing method of a low temperature poly-silicon thin film in the present application is enhanced.

公开(公告)号：US20160365360A1

公开(公告)日：2016-12-15

申请号：US15095649

申请日：2016-04-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong LI ,  Huijuan ZHANG ,  Xiaoyong LU ,  Zheng LIU ,  Yucheng CHAN ,  Chunping LONG

IPC: H01L27/12 ,  H01J37/32 ,  H01L21/67 ,  H01L29/786 ,  H01L21/3065

Abstract: The present disclosure discloses a smoothing device, a smoothing method, a thin film transistor, a display substrate and a display device. The smoothing device comprises a cavity, a plasma generating component, a magnetic field generating component, an electric field generating component and a carrier located within the cavity. The plasmas generated by the plasma generating component are subjected to the Lorentz force parallel to the surface of the object to be smoothed under the effect of the magnetic field generated by the magnetic field generating component, and subjected to an electric field force in the direction perpendicular to the surface of the object to be smoothed and pointing to the object to be smoothed under the effect of the electric field generated by the electric field generating component.

Abstract translation: 本公开公开了一种平滑装置，平滑方法，薄膜晶体管，显示基板和显示装置。 平滑装置包括空腔，等离子体产生部件，磁场产生部件，电场产生部件和位于腔内的载体。 由等离子体产生部件产生的等离子体在由磁场产生部件产生的磁场的作用下经受平行于被平衡物体的表面的洛伦兹力，并且在垂直方向上受到电场力 到要平滑的物体的表面，并且在由电场产生部件产生的电场的作用下指向待平滑的物体。

公开(公告)号：US20160349572A1

公开(公告)日：2016-12-01

申请号：US14892066

申请日：2015-06-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

Inventor： Yupeng WANG ,  Xiaolong LI ,  Lifeng LIN ,  Chao TIAN ,  Hongming ZHAN

IPC: G02F1/1335

CPC classification number: G02F1/133528 ,  G02F1/1336 ,  G02F2001/133562 ,  G02F2001/133567 ,  G02F2201/46 ,  G02F2203/48 ,  G02F2203/62 ,  G02F2203/66 ,  G06F1/163

Abstract: A display device includes a display component (1), which includes a liquid crystal panel and a backlight source (11) with the liquid crystal panel including a liquid crystal cell, a first polarizing sheet (12) located on a side of the liquid crystal cell near the backlight source, and a second polarizing sheet (16) located on a side of the liquid crystal cell away from the backlight source. One of the first polarizing sheet (12) and the second polarizing sheet (16) is movable.

Abstract translation: 显示装置包括显示部件（1），其包括液晶面板和背光源（11），液晶面板包括液晶单元，第一偏振片（12）位于液晶面 靠近背光源的单元，以及位于液晶单元侧离开背光源的第二偏振片（16）。 第一偏振片（12）和第二偏振片（16）中的一个是可移动的。