知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.018 seconds)

    GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
    2.
    发明申请
    GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER 有权
    基于GAN的肖特基二极管与ALGAN表面层

    公开(公告)号：US20140374769A1

    公开(公告)日：2014-12-25

    申请号：US14479634

    申请日：2014-09-08

    Applicant: Avogy, Inc.

    Inventor： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

    IPC: H01L29/872 ,  H01L29/47 ,  H01L29/205 ,  H01L21/02 ,  H01L29/66

    CPC classification number: H01L29/872 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66143

    Abstract: A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN substrate having first and second opposing surfaces. The method also includes forming an ohmic metal contact electrically coupled to the first surface, forming an n-type GaN epitaxial layer coupled to the second surface, and forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer. The AlGaN surface layer has a thickness which is less than a critical thickness, and the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer. The method also includes forming a Schottky contact electrically coupled to the n-type AlGaN surface layer, where, during operation, an interface between the n-type GaN epitaxial layer and the n-type AlGaN surface layer is substantially free from a two-dimensional electron gas.

    Abstract translation: 公开了肖特基二极管和使用氮化镓（GaN）材料制造肖特基二极管的方法。 该方法包括提供具有第一和第二相对表面的n型GaN衬底。 该方法还包括形成电耦合到第一表面的欧姆金属接触，形成耦合到第二表面的n型GaN外延层，以及形成与n型GaN结合的n型氮化镓铝（AlGaN）表面层 GaN外延层。 AlGaN表面层具有小于临界厚度的厚度，并且基于AlGaN表面层的铝摩尔分数来确定临界厚度。 该方法还包括形成电耦合到n型AlGaN表面层的肖特基接触，其中在操作期间，n型GaN外延层和n型AlGaN表面层之间的界面基本上不含二维 电子气。

    GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
    3.
    发明申请
    GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE 审中-公开
    基于GAN的肖特基二极管与现场板

    公开(公告)号：US20140051236A1

    公开(公告)日：2014-02-20

    申请号：US14062724

    申请日：2013-10-24

    Applicant: AVOGY, INC.

    Inventor： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

    IPC: H01L29/66

    CPC classification number: H01L29/66143 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66212 ,  H01L29/872

    Abstract: A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.

    Abstract translation: 一种制造III族氮化物半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的III族氮化物衬底，形成耦合到III族氮化物衬底的第一表面的III族氮化物外延层，以及 去除所述III族氮化物外延层的至少一部分以形成第一暴露表面。 该方法还包括形成耦合到第一暴露表面的电介质层，去除电介质层的至少一部分，以及形成耦合到电介质层的剩余部分的金属层，使得电介质层的剩余部分被布置 在III族氮化物外延层和金属层之间。

    GaN-based Schottky barrier diode with algan surface layer
    5.
    发明授权
    GaN-based Schottky barrier diode with algan surface layer 有权
    具有铝酸盐表面层的GaN基肖特基势垒二极管

    公开(公告)号：US09450112B2

    公开(公告)日：2016-09-20

    申请号：US14479634

    申请日：2014-09-08

    Applicant: Avogy, Inc.

    Inventor： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

    IPC: H01L29/47 ,  H01L29/872 ,  H01L29/66 ,  H01L21/02 ,  H01L29/205 ,  H01L29/20

    CPC classification number: H01L29/872 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66143

    Abstract: A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN substrate having first and second opposing surfaces. The method also includes forming an ohmic metal contact electrically coupled to the first surface, forming an n-type GaN epitaxial layer coupled to the second surface, and forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer. The AlGaN surface layer has a thickness which is less than a critical thickness, and the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer. The method also includes forming a Schottky contact electrically coupled to the n-type AlGaN surface layer, where, during operation, an interface between the n-type GaN epitaxial layer and the n-type AlGaN surface layer is substantially free from a two-dimensional electron gas.

    Abstract translation: 公开了肖特基二极管和使用氮化镓（GaN）材料制造肖特基二极管的方法。 该方法包括提供具有第一和第二相对表面的n型GaN衬底。 该方法还包括形成电耦合到第一表面的欧姆金属接触，形成耦合到第二表面的n型GaN外延层，以及形成与n型GaN结合的n型氮化镓铝（AlGaN）表面层 GaN外延层。 AlGaN表面层具有小于临界厚度的厚度，并且基于AlGaN表面层的铝摩尔分数来确定临界厚度。 该方法还包括形成电耦合到n型AlGaN表面层的肖特基接触，其中在操作期间，n型GaN外延层和n型AlGaN表面层之间的界面基本上不含二维 电子气。

Patent Agency Ranking