公开(公告)号：US20140271097A1

公开(公告)日：2014-09-18

申请号：US14188344

申请日：2014-02-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan WANG ,  Xinglong CHEN ,  Zihui LI ,  Hiroshi HAMANA ,  Zhijun CHEN ,  Ching-Mei HSU ,  Jiayin HUANG ,  Nitin K. INGLE ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN ,  Randhir THAKUR

IPC: H01L21/677

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20170229313A1

公开(公告)日：2017-08-10

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui LI ,  Xing ZHONG ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/3065 ,  C30B33/12

CPC classification number: H01L21/3065 ,  C09K13/06 ,  C30B33/12 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US20170178915A1

公开(公告)日：2017-06-22

申请号：US15043955

申请日：2016-02-15

Applicant: Applied Materials, Inc.

Inventor： Nitin K. INGLE ,  Anchuan WANG ,  Zihui LI ,  Mikhail KOROLIK

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.

公开(公告)号：US20180082849A1

公开(公告)日：2018-03-22

申请号：US15823083

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Nitin K. INGLE ,  Anchuan WANG ,  Zihui LI ,  Mikhail KOROLIK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.

公开(公告)号：US20170133232A1

公开(公告)日：2017-05-11

申请号：US14961495

申请日：2015-12-07

Applicant: Applied Materials, Inc.

Inventor： Zihui LI ,  Xing ZHONG ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US20150371861A1

公开(公告)日：2015-12-24

申请号：US14312202

申请日：2014-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Zihui LI ,  Zhijun CHEN ,  Anchuan WANG

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/3086 ,  H01L21/266 ,  H01L21/3081 ,  H01L21/31144

Abstract: A method of patterning a substrate is described and include two possible layers which may be easily integrated into a photoresist patterning process flow and avoid an observed photoresist peeling problems. A conformal carbon layer or a conformal silicon-carbon-nitrogen layer may be formed between an underlying silicon oxide layer and an overlying photoresist layer. Either inserted layer may avoid remotely-excited fluorine etchants from diffusing through the photoresist and chemically degrading the silicon oxide. The conformal carbon layer may be removed at the same time as the photoresist and the conformal silicon-carbon-nitrogen layer may be removed at the same time as the silicon oxide, limiting process complexity.

Abstract translation: 描述了图案化衬底的方法，并且包括两个可能的层，其可以容易地集成到光致抗蚀剂图案化工艺流程中并避免观察到的光刻胶剥离问题。 可以在下面的氧化硅层和上覆的光致抗蚀剂层之间形成保形碳层或保形硅 - 碳 - 氮层。 任一插入层可以避免远程激发的氟蚀刻剂通过光致抗蚀剂扩散并化学降解氧化硅。 可以在与硅氧化物同时去除光致抗蚀剂和共形硅 - 碳 - 氮层的同时去除共形碳层，从而限制了工艺的复杂性。