公开(公告)号：US20170178915A1

公开(公告)日：2017-06-22

申请号：US15043955

申请日：2016-02-15

Applicant: Applied Materials, Inc.

Inventor： Nitin K. INGLE ,  Anchuan WANG ,  Zihui LI ,  Mikhail KOROLIK

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.

公开(公告)号：US20180082849A1

公开(公告)日：2018-03-22

申请号：US15823083

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Nitin K. INGLE ,  Anchuan WANG ,  Zihui LI ,  Mikhail KOROLIK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.