公开(公告)号：US20140271097A1

公开(公告)日：2014-09-18

申请号：US14188344

申请日：2014-02-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan WANG ,  Xinglong CHEN ,  Zihui LI ,  Hiroshi HAMANA ,  Zhijun CHEN ,  Ching-Mei HSU ,  Jiayin HUANG ,  Nitin K. INGLE ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN ,  Randhir THAKUR

IPC: H01L21/677

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20170229309A1

公开(公告)日：2017-08-10

申请号：US15096428

申请日：2016-04-12

Applicant: Applied Materials, Inc.

Inventor： Jiayin HUANG ,  Lin XU ,  Zhijun CHEN ,  Anchuan WANG

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02049 ,  H01L21/31116 ,  H01L21/67069

Abstract: A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.