公开(公告)号：US20170229309A1

公开(公告)日：2017-08-10

申请号：US15096428

申请日：2016-04-12

申请人： Applied Materials, Inc.

发明人： Jiayin HUANG ,  Lin XU ,  Zhijun CHEN ,  Anchuan WANG

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02049 ,  H01L21/31116 ,  H01L21/67069

摘要： A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.

公开(公告)号：US20150206764A1

公开(公告)日：2015-07-23

申请号：US14157724

申请日：2014-01-17

申请人： APPLIED MATERIALS, INC.

发明人： Xikun WANG ,  Lin XU ,  Anchuan WANG ,  Nitin K. INGLE

IPC分类号： H01L21/311

CPC分类号： H01L21/31122 ,  H01J37/32357 ,  H01L21/0337

摘要： Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

摘要翻译： 描述了相对于氧化硅，氮化硅和/或其它电介质来选择性地蚀刻氧化钛的方法。 所述方法包括使用由含氟前体和/或含氯前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钛反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钛，同时非常缓慢地除去其它暴露的材料。 在远程等离子体蚀刻之前执行方向溅射预处理，并且能够提高选择性以及方向选择性。 在一些实施方案中，钛氧化物蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。