公开(公告)号：US20170294320A1

公开(公告)日：2017-10-12

申请号：US15484527

申请日：2017-04-11

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang CUI ,  Xing ZHONG ,  Jie LIU ,  Linlin WANG

IPC: H01L21/3213 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02071 ,  H01L21/28088 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: A method for processing a semiconductor substrate is described herein. The method described herein includes generating fluorine radicals and ions, delivering the fluorine radicals through an ion blocker to a processing region, and removing one or more portions of a gate structure to expose one or more portions of a gate dielectric material disposed thereunder. The gate structure includes at least two ceramic or metal layers, and the gate dielectric material is made of a high-k dielectric material. A substrate having the gate structure and gate dielectric material formed thereon is disposed in the processing region, and the temperature of the substrate is maintained at about 60 degrees Celsius or higher. By etching the gate structure using fluorine radicals at a temperature greater or equal to 60 degrees Celsius, the at least two ceramic or metal layers have a flat cross sectional profile.

公开(公告)号：US20170229313A1

公开(公告)日：2017-08-10

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui LI ,  Xing ZHONG ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/3065 ,  C30B33/12

CPC classification number: H01L21/3065 ,  C09K13/06 ,  C30B33/12 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US20170291199A1

公开(公告)日：2017-10-12

申请号：US15485105

申请日：2017-04-11

Applicant: Applied Materials, Inc.

Inventor： Xing ZHONG ,  Zhijun CHEN ,  Zhenjiang CUI ,  Nitin K. INGLE

IPC: B08B5/00 ,  H01L21/02

CPC classification number: H01L21/02057 ,  H01L21/76224

Abstract: A method for removing halogen from a surface of a substrate is described herein. The method described herein includes flowing oxygen gas and an inert gas such as nitrogen gas into a RPS. The gases in the RPS are energized to form oxygen radicals and nitrogen radicals. The oxygen and nitrogen radicals are used to remove halogen content on the surface of the substrate. The chamber pressure of the halogen content removal process is very low, ranging from about 50 mTorr to about 100 mTorr. By using oxygen gas and an inert gas and with a low chamber pressure, the halogen content on the surface of the substrate is reduced while keeping the oxidation level of the surface of the substrate to at most 10 Angstroms.

公开(公告)号：US20170133232A1

公开(公告)日：2017-05-11

申请号：US14961495

申请日：2015-12-07

Applicant: Applied Materials, Inc.

Inventor： Zihui LI ,  Xing ZHONG ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.