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1.发明申请公开(公告)号：US20230086151A1
公开(公告)日：2023-03-23
申请号：US17483085
申请日：2021-09-23
摘要： Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises performing a first vacuum processing procedure on a substrate, obtaining temperature measurements of the substrate from a vacuum thermocouple, obtaining temperature measurements of the substrate from a non-contact infrared sensor, calibrating the non-contact infrared sensor based on the temperature measurements from the vacuum thermocouple and the temperature measurements from the non-contact infrared sensor, and performing a second vacuum processing procedure on the substrate using the calibrated non-contact infrared sensor.
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公开(公告)号：US20230343615A1
公开(公告)日：2023-10-26
申请号：US17726808
申请日：2022-04-22
IPC分类号： H01L21/67 , H01L21/673 , H01L21/687
CPC分类号： H01L21/67248 , H01L21/6732 , H01L21/68742
摘要： A system for degassing substrates provides reduced infrared sources in a degas chamber. In some embodiments, the system includes a degas chamber with a microwave source and an infrared temperature sensor positioned in a bottom of the degas chamber, at least one hoop with an annular shape that is configured to support or lift a substrate and is formed from at least one first material that is opaque to microwaves and has an emissivity of 0.1 or less, and at least one actuator with a movable vertical shaft. Each of the at least one actuator is attached under one of the hoops at an outer perimeter of the hoop. The portion of the movable vertical shaft that is exposed to microwaves from the microwave source in the degas chamber is formed from at least one second material that is opaque to microwaves and has an emissivity of 0.1 or less.
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公开(公告)号：US20220406643A1
公开(公告)日：2022-12-22
申请号：US17351530
申请日：2021-06-18
IPC分类号： H01L21/687 , H01L21/67 , H05B6/64
摘要： Embodiments of substrate supports for use in microwave degas chambers are provided herein. In some embodiments, a substrate support for use in a microwave degas chamber includes a support plate having one or more support features for supporting a substrate; a susceptor comprising a plate disposed on the support plate, wherein the susceptor includes one or more openings, wherein the one or more support features extend through corresponding ones of the one or more openings; and a metal foil disposed beneath a side of the susceptor facing the support plate.
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公开(公告)号：US20230100602A1
公开(公告)日：2023-03-30
申请号：US17486210
申请日：2021-09-27
摘要： A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.
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公开(公告)号：US20210217656A1
公开(公告)日：2021-07-15
申请号：US17217179
申请日：2021-03-30
发明人： Felix DENG , Yueh Sheng OW , Tuck Foong KOH , Nuno Yen-Chu CHEN , Yuichi WADA , Sree Rangasai V. KESAPRAGADA , Clinton GOH
IPC分类号： H01L21/762 , H01L21/67
摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.
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公开(公告)号：US20240258076A1
公开(公告)日：2024-08-01
申请号：US18103192
申请日：2023-01-30
发明人： Tuck Foong KOH , Sarath BABU , Yuichi WADA
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32477 , H01J37/32715 , H01L21/6833 , H01J2237/0206 , H01J2237/2007
摘要： Embodiments of the disclosure include a substrate support including a metal body with a substrate face, a plurality of lift pin holes formed in the body, and a dielectric coating disposed on the substrate face of the body. Each of the plurality lift pin holes includes a through hole and a chamfer face configured to mate with a lift pin sleeve. The dielectric coating includes a substrate supporting surface, a thickness, and a pattern disposed in the substrate supporting surface.
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公开(公告)号：US20210233802A1
公开(公告)日：2021-07-29
申请号：US17227354
申请日：2021-04-11
发明人： Felix DENG , Yueh Sheng OW , Tuck Foong KOH , Nuno Yen-Chu CHEN , Yuichi WADA , Sree Rangasai V. KESAPRAGADA , Clinton GOH
IPC分类号： H01L21/762 , H01L21/67
摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.
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公开(公告)号：US20210001520A1
公开(公告)日：2021-01-07
申请号：US16919736
申请日：2020-07-02
发明人： Tuck Foong KOH , Chien-Kang HSIUNG , Yueh Sheng OW , Felix DENG , Yue CUI , Nuno Yen-Chu CHEN , Ananthkrishna JUPUDI , Clinton GOH , Vinodh RAMACHANDRAN
摘要： Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.
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公开(公告)号：US20160322234A1
公开(公告)日：2016-11-03
申请号：US15142220
申请日：2016-04-29
发明人： Jen Sern LEW , Tuck Foong KOH , Sriskantharajah THIRUNAVUKARASU , Karthik ELUMALAI , ENG SHENG PEH , JUN-LIANG SU
IPC分类号： H01L21/324 , F27B9/02 , F27B9/10 , H01L21/67
CPC分类号： H01L21/3247 , F27B9/02 , F27B9/10 , F27B17/0025 , H01L21/67109 , H01L21/67248 , H01L21/67288
摘要： Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.
摘要翻译： 本文提供了用于校正衬底畸形的方法和装置的实施例。 在一些实施例中，衬底平坦化系统包括：具有第一衬底支撑件和第一喷头的第一处理室，其中所述第一衬底支撑件不包括夹紧机构; 第一加热器，设置在所述第一基板支撑件中以加热放置在所述第一基板支撑件的第一支撑表面上的基板; 第二加热器，被配置为将流过所述第一喷淋头的处理气体加热到所述第一处理室的第一处理容积中; 以及具有第二基板支撑件的第二处理室，其中所述第二基板支撑件不被加热，并且其中所述第一处理室和所述冷却室都是非真空室。
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