公开(公告)号：US20210233802A1

公开(公告)日：2021-07-29

申请号：US17227354

申请日：2021-04-11

申请人： APPLIED MATERIALS, INC.

发明人： Felix DENG ,  Yueh Sheng OW ,  Tuck Foong KOH ,  Nuno Yen-Chu CHEN ,  Yuichi WADA ,  Sree Rangasai V. KESAPRAGADA ,  Clinton GOH

IPC分类号： H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20210001520A1

公开(公告)日：2021-01-07

申请号：US16919736

申请日：2020-07-02

申请人： APPLIED MATERIALS, INC.

发明人： Tuck Foong KOH ,  Chien-Kang HSIUNG ,  Yueh Sheng OW ,  Felix DENG ,  Yue CUI ,  Nuno Yen-Chu CHEN ,  Ananthkrishna JUPUDI ,  Clinton GOH ,  Vinodh RAMACHANDRAN

IPC分类号： B29C35/08 ,  H05B6/80 ,  H05B6/70 ,  H05B6/68

摘要： Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.

公开(公告)号：US20240266220A1

公开(公告)日：2024-08-08

申请号：US18105390

申请日：2023-02-03

申请人： Applied Materials, Inc.

发明人： Jonathan Bryant MELLEN ,  Clinton GOH ,  Cheng SUN

IPC分类号： H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67 ,  H01L23/544

CPC分类号： H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67207 ,  H01L23/544 ,  H01J2237/022 ,  H01J2237/334 ,  H01L2223/5446

摘要： A method for dicing a die from a substrate for bonding that leverages laser and multiple etch processes. The method may include performing a laser cutting process to form a cut that removes a first portion of a dicing street in the substrate, performing a first plasma etch process to increase the laser kerf width to a first plasma etch width that is less than a dicing street width and to remove any non-silicon material from a bottom of the cut, and performing a second plasma etch process to increase the first plasma etch width to the dicing street width and to remove any remaining portion of the dicing street to completely separate the die from the substrate.

公开(公告)号：US20210217656A1

公开(公告)日：2021-07-15

申请号：US17217179

申请日：2021-03-30

申请人： APPLIED MATERIALS, INC.

发明人： Felix DENG ,  Yueh Sheng OW ,  Tuck Foong KOH ,  Nuno Yen-Chu CHEN ,  Yuichi WADA ,  Sree Rangasai V. KESAPRAGADA ,  Clinton GOH

IPC分类号： H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.