HEATED PEDESTAL WITH LOW IMPEDANCE RF ROD

    公开(公告)号:US20250062104A1

    公开(公告)日:2025-02-20

    申请号:US18234731

    申请日:2023-08-16

    Abstract: Embodiments of substrate supports for use in process chambers are provided herein. In some embodiments, a substrate support for a process chamber includes: a pedestal having a support surface for supporting a substrate, one or more heating elements disposed therein, and an RF electrode disposed therein; a hollow shaft coupled to a lower surface of the pedestal; and an RF rod extending through the hollow shaft and having an upper portion that includes an upper end coupled to the RF electrode, wherein the upper end of the RF rod has at least one of (a) a cross sectional width that is wider than a lower portion of the RF rod or (b) one or more slots.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20230402304A1

    公开(公告)日:2023-12-14

    申请号:US17748270

    申请日:2022-05-19

    CPC classification number: H01L21/67248 G01K7/04 G01K7/223

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing volume for processing a substrate and a pressure system in fluid communication with the processing volume and comprising a throttle valve assembly including a housing, a sensing device disposed in an interior of the housing, and a fan open to the interior of the housing, wherein, during operation of the pressure system to control a pressure within the processing volume, the sensing device is responsive to temperature changes in the interior of the housing such that the fan remains off when a temperature of the interior of the housing is less than a predetermined temperature and automatically turns on when the temperature within interior of the housing is equal to or greater than the predetermined temperature.

    BIMETALLIC FACEPLATE FOR SUBSTRATE PROCESSING

    公开(公告)号:US20240124980A1

    公开(公告)日:2024-04-18

    申请号:US17964260

    申请日:2022-10-12

    CPC classification number: C23C16/45563

    Abstract: A bimetallic faceplate for substrate processing is provided including a plate having a plurality of gas distribution holes and formed of a first metal having a first coefficient of thermal expansion, the plate having at least one groove around a center of the plate and spaced from the center of the plate; and a metallic element disposed in the at least one groove and fixed to the plate in the at least one groove, the metallic element having a second coefficient of thermal expansion different from the first coefficient of thermal expansion, the metallic element being symmetrically arranged on or in the plate. A chamber for substrate processing is provided that includes a bimetallic faceplate. Also, a method of making a bimetallic faceplate is provided.

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