Method and Apparatus for Laser Texturing a Component

    公开(公告)号:US20240399504A1

    公开(公告)日:2024-12-05

    申请号:US18203727

    申请日:2023-05-31

    Abstract: Methods for texturing a surface of a component which include partially submerging the component within a liquid such that a first portion of the component is not submerged in the liquid and a second portion of the component is submerged in the liquid; and contacting at least the first portion of the component with a laser beam at a power and for a period of time sufficient to texture the first portion of the component to a first surface roughness, wherein the second portion of the component is either not textured by the laser beam, or is textured to a lesser degree than the first portion of the component and has a second surface roughness which is less than the first surface roughness.

    Integrated Pressure Sensor for Process Chamber Assemblies

    公开(公告)号:US20240410773A1

    公开(公告)日:2024-12-12

    申请号:US18208010

    申请日:2023-06-09

    Abstract: Methods and apparatus provide in-situ pressure sensors for apparatus used in semiconductor manufacturing processes. In some embodiments, the apparatus may comprise a showerhead body, a first gas channel of the showerhead body, a second gas channel of the showerhead body, one or more first gas pressure sensors positioned on a surface of the first gas channel, and one or more second gas pressure sensors positioned on a surface of the second gas channel. The apparatus may be formed by additive manufacturing including the pressure sensors and electrical connections to the pressure sensors. In some embodiments, a controller may be utilized to control semiconductor processes based on the pressure readings from the in-situ pressure sensors.

    In-situ gasket formation
    5.
    发明公开

    公开(公告)号:US20240271702A1

    公开(公告)日:2024-08-15

    申请号:US18108427

    申请日:2023-02-10

    CPC classification number: F16J15/328

    Abstract: A method for forming an elastomer gasket in-situ on a part used for substrate processing that is tunable to a cross-section and/or length of a sealing surface such as a gasket groove or planar sealing surface. The method may include forming, in-situ, a first layer of at least one type of gasket material directly onto a bottom of the sealing surface of the part, forming subsequent layers of the at least one type of gasket material on at least one previously formed layer, and adjusting a number of subsequent layers of the at least one type of gasket material based on dimensions of the sealing surface.

    METHODS FOR REPAIRING A RECESS OF A CHAMBER COMPONENT

    公开(公告)号:US20210035767A1

    公开(公告)日:2021-02-04

    申请号:US16525465

    申请日:2019-07-29

    Abstract: Embodiments of the present disclosure generally relate to a method for forming and treating a component in semiconductor manufacturing. In one embodiment, a method for treating a chamber component used in vacuum processing includes obtaining the chamber component including a recess formed in a surface of the chamber component, the surface being fabricated from a metal, and the recess has a depth ranging from about 0.5 mm to about 10 mm and a width ranging from about 1 mm to about 15 mm. The method further includes polishing the bottom surface of the recess using a laser to form a polished bottom surface having an Ra number of 1 micron or less. The laser can achieve high quality surface finishing.

    DETECTING DEFECTS OF SEMICONDUCTOR MANUFACTURING ASSEMBLIES

    公开(公告)号:US20240162065A1

    公开(公告)日:2024-05-16

    申请号:US17987356

    申请日:2022-11-15

    Abstract: A method of determining an operational status of a semiconductor manufacturing assembly uses internal vibrations of an in-situ assembly to detect defects. The method may include initiating a first test vibration in an internal structure of the semiconductor manufacturing assembly while the semiconductor manufacturing assembly is in-situ in a semiconductor processing chamber, receiving a first vibration signal caused by the first test vibration, transforming the first vibration signal into a first frequency domain representation of the first vibration signal, determining the operational status of the semiconductor manufacturing assembly based on the first frequency domain representation, and performing a corrective action for the semiconductor manufacturing assembly in response to the operational status.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20230402304A1

    公开(公告)日:2023-12-14

    申请号:US17748270

    申请日:2022-05-19

    CPC classification number: H01L21/67248 G01K7/04 G01K7/223

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing volume for processing a substrate and a pressure system in fluid communication with the processing volume and comprising a throttle valve assembly including a housing, a sensing device disposed in an interior of the housing, and a fan open to the interior of the housing, wherein, during operation of the pressure system to control a pressure within the processing volume, the sensing device is responsive to temperature changes in the interior of the housing such that the fan remains off when a temperature of the interior of the housing is less than a predetermined temperature and automatically turns on when the temperature within interior of the housing is equal to or greater than the predetermined temperature.

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