Embodiments of the present disclosure generally relate to a method for forming and treating a component in semiconductor manufacturing. In one embodiment, a method for treating a chamber component used in vacuum processing includes obtaining the chamber component including a recess formed in a surface of the chamber component, the surface being fabricated from a metal, and the recess has a depth ranging from about 0.5 mm to about 10 mm and a width ranging from about 1 mm to about 15 mm. The method further includes polishing the bottom surface of the recess using a laser to form a polished bottom surface having an Ra number of 1 micron or less. The laser can achieve high quality surface finishing.