公开(公告)号：US10005025B2

公开(公告)日：2018-06-26

申请号：US14877753

申请日：2015-10-07

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Monika Agarwal ,  Hamid Mohiuddin ,  Kadthala R. Narendrnath

IPC: B01D53/32 ,  B01D53/68 ,  H01J37/32

CPC classification number: B01D53/32 ,  B01D53/68 ,  B01D2257/2025 ,  B01D2257/2027 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2258/0216 ,  B01D2259/818 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32844 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

公开(公告)号：US09627231B2

公开(公告)日：2017-04-18

申请号：US14015650

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Kadthala Ramaya Narendrnath ,  Gangadhar Sheelavant ,  Monika Agarwal ,  Ashish Bhatnagar

IPC: B32B7/12 ,  B32B3/20 ,  H01L21/67 ,  B32B7/14 ,  H01L21/683 ,  H01L21/687

CPC classification number: B32B37/1292 ,  B32B7/14 ,  H01L21/67005 ,  H01L21/67092 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6835 ,  H01L21/68785 ,  H01L2221/68318 ,  H01L2221/68381 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/27438 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29013 ,  H01L2224/29014 ,  H01L2224/29078 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/83862 ,  H01L2224/83877 ,  H01L2224/98 ,  H01L2924/15151 ,  Y10T156/10 ,  Y10T279/23 ,  Y10T428/24851 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Methods for bonding substrates, forming assemblies using the same, along with improved methods for refurbishing said assemblies are disclosed that take advantage of at least one channel formed in an adhesive utilized to join two substrates to improve fabrication, performance and refurbishment of the assemblies. In one embodiment an assembly includes a first substrate secured to a second substrate by an adhesive layer. The assembly includes a channel having at least one side bounded by the adhesive layer and having an outlet exposed to an exterior of the assembly.

公开(公告)号：US10131126B2

公开(公告)日：2018-11-20

申请号：US15453456

申请日：2017-03-08

Applicant: Applied Materials, Inc.

Inventor： Kadthala Ramaya Narendrnath ,  Gangadhar Sheelavant ,  Monika Agarwal ,  Ashish Bhatnagar

IPC: B32B7/12 ,  B32B7/14 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  B32B37/12

Abstract: Methods for fabricating and refurbishing an assembly are disclosed herein. The method begins by applying an adhesive layer onto a first substrate. A second substrate is placed onto the adhesive layer, thereby securing the two substrates together, the adhesive layer bounding at least one side of a channel that extends laterally between the substrates to an exterior of the assembly. And, the substrates and the adhesive layer are subjected to a bonding procedure and allowing outgassing of volatiles from the adhesive layer to escape from between the substrates through the channel, wherein the substrates bonded by the adhesive layer form a component for a semiconductor vacuum processing chamber.