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公开(公告)号:US20240032183A1
公开(公告)日:2024-01-25
申请号:US18373128
申请日:2023-09-26
Applicant: Applied Materials, Inc.
Inventor: Costel BILOIU , David T. BLAHNIK , Wai-Ming TAM , Charles T. CARLSON , Frank SINCLAIR
CPC classification number: H05H7/02 , H05H7/12 , H05H9/00 , H05H2007/025
Abstract: An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.
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公开(公告)号:US20240179828A1
公开(公告)日:2024-05-30
申请号:US18431579
申请日:2024-02-02
Applicant: Applied Materials, Inc.
Inventor: David T. BLAHNIK , Charles T. CARLSON , Robert B. VOPAT , Frank SINCLAIR , Paul J. MURPHY , Krag R. SENIOR
IPC: H05H7/22
CPC classification number: H05H7/22 , H05H2007/222
Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.
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公开(公告)号:US20240420919A1
公开(公告)日:2024-12-19
申请号:US18210524
申请日:2023-06-15
Applicant: Applied Materials, Inc.
Inventor: Aaron P. WEBB , Krag R. SENIOR , Chris CZAJKA , Charles T. CARLSON , Jason M. SCHALLER
IPC: H01J37/30 , H01J37/317 , H05H9/04
Abstract: An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator comprising at least one acceleration stage including a resonator coil coupled to a drift tube assembly, the drift tube assembly including a first drift tube coupled to a first end of a first insulting rod via interference fit, a second drift tube coupled to a first end of a second insulting rod via interference fit, and a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.
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公开(公告)号:US20200217423A1
公开(公告)日:2020-07-09
申请号:US16642827
申请日:2018-09-28
Applicant: Applied Materials, Inc.
Inventor: Benjamin B. RIORDON , Charles T. CARLSON , Aaron WEBB , Gary WYKA
Abstract: The present disclosure generally relates to an isolation device for use in processing systems. The isolation device has a body with an inlet opening disposed at a first end coupled to a processing system component such as a remote plasma source and outlet openings, for example two, disposed at a second end which are coupled to a processing system component such as a process chamber. Flaps disposed within the body are actuatable to an open position from a closed position or to a closed position from an open position, to selectively allow or prevent passage of a fluid from the processing system component coupled to the isolation device to the other processing system component coupled thereto.
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公开(公告)号:US20190293199A1
公开(公告)日:2019-09-26
申请号:US16341703
申请日:2017-12-01
Applicant: Applied Materials, Inc.
Inventor: Charles T. CARLSON , Tammy Jo PRIDE , Benjamin B. RIORDON , Aaron WEBB
Abstract: Embodiments of the disclosure generally relate to a flapper valve. The flapper valve may be used with processing chambers, such as semiconductor substrate processing chambers. In one embodiment, a flapper valve includes a housing having a first opening at a first end thereof and a second opening at a second end thereof, a first flapper pivotably disposed in the housing, and a second flapper pivotably disposed in the housing. The first and second flappers are movable to selectively open and close at least one of the first opening and the second opening.
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公开(公告)号:US20190148186A1
公开(公告)日:2019-05-16
申请号:US16157808
申请日:2018-10-11
Applicant: Applied Materials, Inc.
Inventor: Jason M. SCHALLER , Robert Brent VOPAT , Charles T. CARLSON , Jeffrey Charles BLAHNIK , Timothy J. FRANKLIN , David BLAHNIK , Aaron WEBB
IPC: H01L21/67 , H01L21/673
Abstract: Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290° C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.
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公开(公告)号:US20190139793A1
公开(公告)日:2019-05-09
申请号:US16170683
申请日:2018-10-25
Applicant: Applied Materials, Inc.
Inventor: Jean DELMAS , Charles T. CARLSON , Robert Brent VOPAT
IPC: H01L21/67 , H01L21/324 , F22G7/00
Abstract: A system for annealing substrates is provided. The system includes a first boiler having an input coupled to a water source; a second boiler having an input connected to an output of the first boiler; and a batch processing chamber coupled to the output of the second boiler, wherein the batch processing chamber is configured to anneal a plurality of substrates using steam from the second boiler.
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