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公开(公告)号：US20200266608A1
公开(公告)日：2020-08-20
申请号：US16867594
申请日：2020-05-06
Applicant: APPLE INC.
Inventor： Chin Han Lin , Weiping Li , Xiaofeng Fan
Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.
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公开(公告)号：US10700493B2
公开(公告)日：2020-06-30
申请号：US16524313
申请日：2019-07-29
Applicant: APPLE INC.
Inventor： Chin Han Lin , Weiping Li , Xiaofeng Fan
Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.
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公开(公告)号：US20180283984A1
公开(公告)日：2018-10-04
申请号：US15947882
申请日：2018-04-09
Applicant: APPLE INC.
Inventor： Denis G. Chen , Brian S. Medower , Chin Han Lin
Abstract: Optical apparatus includes a primary radiation source, which emits first optical radiation along a first optical axis. A DOE includes at least an entrance surface, upon which the first optical radiation from the primary radiation source is incident, and an exit surface, through which one or more primary diffraction orders of the first optical radiation are emitted from the DOE. At least one secondary radiation source is configured to direct second optical radiation to impinge on the DOE along a second optical axis, which is non-parallel to the first optical axis, causing at least a part of the second optical radiation to be diffracted by the DOE such that one or more secondary diffraction orders of the second optical radiation are emitted through the entrance face of the DOE. At least one detector is configured to sense at least one of the secondary diffraction orders of the second optical radiation.
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公开(公告)号：US20240106192A1
公开(公告)日：2024-03-28
申请号：US17951410
申请日：2022-09-23
Applicant: Apple Inc.
Inventor： Fei Tan , Keith Lyon , Tong Chen , Chin Han Lin , Xiaofeng Fan , Arnaud Laflaquiere
CPC classification number: H01S5/0262 , G01S7/4812 , G02B7/287 , G03B13/20 , G03B13/36 , H01L31/125 , H01S5/042 , H01S5/423
Abstract: Disclosed herein are electronic devices that include arrays of dual function light transmit and receive pixels. The pixels of such arrays include a photodetector (PD) structure and a vertical-cavity, surface-emitting laser (VCSEL) diode, both formed in a common stack of epitaxial semiconductor layers. The pixels of the array may be configured by a controller or processor to function either as a light emitter by biasing the VCSEL diode, or as a light detector or receiver by a different bias applied to the PD structure, and this functionality may be altered in time. The array of dual function pixels may be positioned interior to an optical display of an electronic device, in some cases to provide depth sensing or autofocus. The array of pixels may be registered with a camera of an electronic device, such as to provide depth sensing or autofocus.
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公开(公告)号：US20210003385A1
公开(公告)日：2021-01-07
申请号：US16913645
申请日：2020-06-26
Applicant: Apple Inc.
Inventor： Fei Tan , Arnaud Laflaquiere , Chin Han Lin , Keith Lyon , Marc A. Drader , Weiping Li
Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.
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Patent Agency Ranking
公开(公告)号：US10153614B1
公开(公告)日：2018-12-11
申请号：US15844662
申请日：2017-12-18
Applicant: APPLE INC.
Inventor： Chin Han Lin , Weiping Li , Xiaofeng Fan
Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.
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公开(公告)号：US20160336717A1
公开(公告)日：2016-11-17
申请号：US15019981
申请日：2016-02-10
Applicant: Apple Inc.
Inventor： Chin Han Lin , Kevin A. Sawyer , Neil MacKinnon , Venkataram R. Raju , Weiping Li , Xiaofeng Fan
CPC classification number: H01S5/02469 , H01S5/0042 , H01S5/0217 , H01S5/0224 , H01S5/423
Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.
Abstract translation: 制造光电器件的方法包括在半导体衬底上制造多个垂直发射极。 发射器的各个顶表面被结合到散热器，之后半导体衬底在发射器的相应底表面之下移除。 阳极和阴极触点均附接到底表面，以便驱动发射器从底表面发光。 在另一个实施例中，将半导体衬底的上表面接合到具有与发射器的各个顶表面对准的通孔的载体衬底上，然后在发射器的相应底表面之下移除半导体衬底，并且分别 发射器的底表面结合到散热器。
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公开(公告)号：US20250102628A1
公开(公告)日：2025-03-27
申请号：US18763961
申请日：2024-07-03
Applicant: Apple Inc.
Inventor： Fei Tan , Pengfei Qiao , Alexander Hein , Chin Han Lin , Tong Chen , Takashi Hosoda , Arnaud Laflaquiere
Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.
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公开(公告)号：US20230152081A1
公开(公告)日：2023-05-18
申请号：US18094255
申请日：2023-01-06
Applicant: Apple Inc.
Inventor： Fei Tan , Arnaud Laflaquiere , Chin Han Lin , Keith Lyon , Marc A. Drader , Weiping Li
IPC: G01B9/02097 , H01S5/026 , H01S5/343 , H01S5/183 , H01S5/30 , G01B9/02 , G01B11/02 , G01S17/34 , G01S7/4912
CPC classification number: G01B9/02097 , H01S5/0262 , H01S5/3432 , H01S5/18313 , H01S5/3095 , G01B9/02092 , G01B11/026 , H01S5/183 , G01S17/34 , G01S7/4916
Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.
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公开(公告)号：US11549799B2
公开(公告)日：2023-01-10
申请号：US16913645
申请日：2020-06-26
Applicant: Apple Inc.
Inventor： Fei Tan , Arnaud Laflaquiere , Chin Han Lin , Keith Lyon , Marc A. Drader , Weiping Li
IPC: G01B9/02 , G01B9/02097 , H01S5/026 , H01S5/343 , H01S5/183 , H01S5/30 , G01B11/02 , G01S17/34 , G01S7/4912
Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.
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