PLANAR PATTERNED TRANSPARENT CONTACT, DEVICES WITH PLANAR PATTERNED TRANSPARENT CONTACTS, AND/OR METHODS OF MAKING THE SAME
    1.
    发明申请
    PLANAR PATTERNED TRANSPARENT CONTACT, DEVICES WITH PLANAR PATTERNED TRANSPARENT CONTACTS, AND/OR METHODS OF MAKING THE SAME 审中-公开
    平面图形透明触点,具有平面图形透明触点的器件,和/或制造它们的方法

    公开(公告)号:US20130005135A1

    公开(公告)日:2013-01-03

    申请号:US13174349

    申请日:2011-06-30

    IPC分类号: H01L21/283

    摘要: Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.

    摘要翻译: 某些实例涉及用于制备图案化的基本上透明的接触膜的改进方法以及通过这些方法制备的接触膜。 在某些情况下,接触膜可以被图案化并且基本上是平面的。 因此,接触膜可以被图案化,而不用有意地从层和/或膜去除任何材料,例如通过光刻可能需要。 在某些示例性实施例中,包括至少两层的氧交换系统可以沉积在衬底上,并且这些层可以选择性地暴露于热和/或能量以促进氧离子或原子从层中转移较高的焓 的形成到具有较低的形成焓的层。 在某些情况下,氧转移可以允许改变膜的选择性部分的导电性。 这有利地导致相对于导电性和/或电阻率图案化的平面接触膜。

    Planar patterned transparent contact, devices with planar patterned transparent contacts, and/or methods of making the same
    3.
    发明授权
    Planar patterned transparent contact, devices with planar patterned transparent contacts, and/or methods of making the same 有权
    平面图案化透明触点,具有平面图案化透明触点的装置和/或制造它们的方法

    公开(公告)号:US08747959B2

    公开(公告)日:2014-06-10

    申请号:US13174362

    申请日:2011-06-30

    IPC分类号: C08F2/46 B05D3/00 C23C16/40

    摘要: Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.

    摘要翻译: 某些实例涉及用于制备图案化的基本上透明的接触膜的改进方法以及通过这些方法制备的接触膜。 在某些情况下,接触膜可以被图案化并且基本上是平面的。 因此,可以对接触膜进行图案化,而不用有意地从层和/或膜去除任何材料,例如通过光刻可能需要。 在某些示例性实施例中,包含至少两个层的氧交换系统可以沉积在衬底上,并且这些层可以选择性地暴露于热和/或能量以促进氧离子或原子从层中传递更高的焓 的形成到具有较低的形成焓的层。 在某些情况下,氧转移可以允许改变膜的选择性部分的导电性。 这有利地导致相对于导电性和/或电阻率图案化的平面接触膜。

    Apparatus and method for making sputtered films with reduced stress asymmetry
    4.
    发明授权
    Apparatus and method for making sputtered films with reduced stress asymmetry 有权
    制备具有减小的应力不对称的溅射膜的装置和方法

    公开(公告)号:US09567666B2

    公开(公告)日:2017-02-14

    申请号:US12318919

    申请日:2009-01-12

    摘要: Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.

    摘要翻译: 本发明的某些示例性实施例涉及用于减少溅射多晶膜中的应力不对称性的技术。 在某些示例性实施例中,提供包括一个或多个基本上垂直的非导电屏蔽的溅射装置,其中这种屏蔽件有助于减少溅射材料焊剂的倾斜分量,从而促进更对称的微晶的生长 。 在某些示例性实施例中,溅射膜的行进方向拉伸应力和交叉涂层机拉伸应力之间的差异优选小于约15%,更优选小于约10%,还更优选小于约5%。

    Light scattering coating for greenhouse applications, and/or coated article including the same
    5.
    发明授权
    Light scattering coating for greenhouse applications, and/or coated article including the same 有权
    用于温室应用的光散射涂层和/或包括其的涂层制品

    公开(公告)号:US09499436B2

    公开(公告)日:2016-11-22

    申请号:US13064600

    申请日:2011-04-01

    摘要: Certain example embodiments relate to a sunlight-scattering thin-film coating disposed on a substrate for greenhouse applications. The surface morphology of the coating promotes a better and more uniform light distribution. For instance, at least one thin-film layer disposed on a substrate may be textured so as to create surface features on the order of 0.1-5 microns, with the surface features being sized to cause (a) light having a wavelength of greater than or equal to about 800 nm incident thereon to primarily scatter to angles less than 30 degrees relative to a major surface of the substrate and (b) light having a wavelength of less than or equal to about 700 nm incident thereon to primarily scatter to angles greater than 20 degrees relative to the major surface of the substrate. This arrangement may advantageously direct beneficial light towards plant life while directing parasitic light away from the plant life.

    摘要翻译: 某些示例实施例涉及设置在用于温室应用的基板上的日光散射薄膜涂层。 涂层的表面形态促进了更好和更均匀的光分布。 例如,设置在基板上的至少一个薄膜层可以被纹理化,以便产生大约0.1-5微米的表面特征,其中表面特征的尺寸使得(a)波长大于 或等于大约800nm入射到其上以主要散射到相对于衬底的主表面小于30度的角度,以及(b)入射到其上的波长小于或等于约700nm的光主要散射到更大的角度 相对于基材的主表面超过20度。 这种布置可以有利地将有利的光引向植物生命,同时将寄生光引导远离植物的寿命。

    Apparatus and method for making sputtered films with reduced stress asymmetry
    6.
    发明申请
    Apparatus and method for making sputtered films with reduced stress asymmetry 有权
    制备具有减小的应力不对称的溅射膜的装置和方法

    公开(公告)号:US20100175988A1

    公开(公告)日:2010-07-15

    申请号:US12318919

    申请日:2009-01-12

    IPC分类号: C23C14/35

    摘要: Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.

    摘要翻译: 本发明的某些示例性实施例涉及用于减少溅射多晶膜中的应力不对称性的技术。 在某些示例性实施例中,提供包括一个或多个基本上垂直的非导电屏蔽的溅射装置,其中这种屏蔽件有助于减少溅射材料焊剂的倾斜分量,从而促进更对称的微晶的生长 。 在某些示例性实施例中,溅射膜的行进方向拉伸应力和交叉涂层机拉伸应力之间的差异优选小于约15%,更优选小于约10%,还更优选小于约5%。

    Front electrode having etched surface for use in photovoltaic device and method of making same
    7.
    发明申请
    Front electrode having etched surface for use in photovoltaic device and method of making same 审中-公开
    具有用于光伏器件的蚀刻表面的前电极及其制造方法

    公开(公告)号:US20090194155A1

    公开(公告)日:2009-08-06

    申请号:US12068119

    申请日:2008-02-01

    IPC分类号: H01L31/00 C23C14/34

    摘要: Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. In certain example embodiments, the front electrode is formed on a flat or substantially flat (non-textured) surface of a glass substrate (e.g., via sputtering), and the surface of the front electrode is textured (e.g., via etching). In completing manufacture of the PV device, the etched surface of the front electrode faces the active semiconductor film of the PV device.

    摘要翻译: 本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏(PV)装置及其制造方法。 在某些示例性实施例中,前电极具有面向PV器件的光电半导体膜的有纹理(例如蚀刻)的表面。 在某些示例性实施例中,前电极形成在玻璃基板(例如,通过溅射)的平坦或基本上平坦的(非纹理的)表面上,并且前电极的表面是有纹理的(例如通过蚀刻)。 在完成PV器件的制造中,前电极的蚀刻表面面对PV器件的有源半导体膜。

    Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
    8.
    发明授权
    Back contact for photovoltaic devices such as copper-indium-diselenide solar cells 有权
    光伏器件如铜铟二硒化物太阳能电池的背接触

    公开(公告)号:US09246025B2

    公开(公告)日:2016-01-26

    申请号:US13455232

    申请日:2012-04-25

    摘要: A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). The first conductive layer of or including copper is located between at least the rear substrate and the second conductive layer of or including molybdenum, and wherein the semiconductor absorber film is located between at least the back contact and the front substrate.

    摘要翻译: 光电器件(例如,太阳能电池)包括:前基板(例如玻璃基板); 半导体吸收膜; 包括铜(Cu)的第一导电层或包括或包括钼(Mo)的第二导电层的背接触; 和背面基板(例如,玻璃基板)。 或包括铜的第一导电层位于至少后基板和包括钼的第二导电层之间,并且其中半导体吸收膜位于至少后接触件和前基板之间。

    Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
    9.
    发明授权
    Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same 有权
    电镀CIGS光伏器件的背面电极配置及其制造方法

    公开(公告)号:US08809674B2

    公开(公告)日:2014-08-19

    申请号:US13455317

    申请日:2012-04-25

    IPC分类号: H01L31/18

    摘要: A back contact configuration for a CIGS-type photovoltaic device is provided. The back contact configuration includes an interfacial seed layer, made up of one or more layers/sublayers, disposed between a Mo based rear contact/electrode and a CIGS inclusive semiconductor absorber. The interfacial seed layer may be of or include one or more element(s) that make up, or help make up, the CIGS inclusive semiconductor absorber. Various methods and compositions of the interfacial seed layer are disclosed, including a seed layer comprising metallic and/or substantially metallic Cu—In—Ga, CIGS, and/or a stack of alternating layers of or including Cu, In and Ga. Methods for making the back contact configuration, including an interfacial seed layer, are also provided.

    摘要翻译: 提供了CIGS型光伏器件的背面接触构造。 背接触配置包括由一个或多个层/子层组成的界面种子层,其设置在Mo基后接触/电极和含CIGS的半导体吸收体之间。 界面种子层可以是或包括构成或帮助构成CIGS的半导体吸收体的一种或多种元素。 公开了界面种子层的各种方法和组成,包括包含金属和/或基本上金属的Cu-In-Ga,CIGS和/或交替层或包括Cu,In和Ga的堆叠的种子层。 还提供了包括界面种子层的背面接触构造。