摘要:
Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.
摘要:
A coated article includes a low-emissivity (low-E) coating supported by a substrate (e.g., glass substrate) for use in a window, where the low-E coating is exposed to ultraviolet (UV) radiation in order to improve the coating's and thus the coated article's electrical, optical and/or thermal blocking properties. Exposing the low-E coating to UV radiation, e.g., emitted from a UV lamp(s) and/or UV laser(s), allows for selective heating of a contact/seed layer which transfers energy to the adjacent IR reflecting layer.
摘要:
Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.
摘要:
Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.
摘要:
Certain example embodiments relate to a sunlight-scattering thin-film coating disposed on a substrate for greenhouse applications. The surface morphology of the coating promotes a better and more uniform light distribution. For instance, at least one thin-film layer disposed on a substrate may be textured so as to create surface features on the order of 0.1-5 microns, with the surface features being sized to cause (a) light having a wavelength of greater than or equal to about 800 nm incident thereon to primarily scatter to angles less than 30 degrees relative to a major surface of the substrate and (b) light having a wavelength of less than or equal to about 700 nm incident thereon to primarily scatter to angles greater than 20 degrees relative to the major surface of the substrate. This arrangement may advantageously direct beneficial light towards plant life while directing parasitic light away from the plant life.
摘要:
Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.
摘要:
Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. In certain example embodiments, the front electrode is formed on a flat or substantially flat (non-textured) surface of a glass substrate (e.g., via sputtering), and the surface of the front electrode is textured (e.g., via etching). In completing manufacture of the PV device, the etched surface of the front electrode faces the active semiconductor film of the PV device.
摘要:
A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). The first conductive layer of or including copper is located between at least the rear substrate and the second conductive layer of or including molybdenum, and wherein the semiconductor absorber film is located between at least the back contact and the front substrate.
摘要:
A back contact configuration for a CIGS-type photovoltaic device is provided. The back contact configuration includes an interfacial seed layer, made up of one or more layers/sublayers, disposed between a Mo based rear contact/electrode and a CIGS inclusive semiconductor absorber. The interfacial seed layer may be of or include one or more element(s) that make up, or help make up, the CIGS inclusive semiconductor absorber. Various methods and compositions of the interfacial seed layer are disclosed, including a seed layer comprising metallic and/or substantially metallic Cu—In—Ga, CIGS, and/or a stack of alternating layers of or including Cu, In and Ga. Methods for making the back contact configuration, including an interfacial seed layer, are also provided.
摘要:
Certain example embodiments of this invention relate to patterned glass that can be used as a cylindrical lens array in a concentrated photovoltaic application, and/or methods of making the same. In certain example embodiments, the lens arrays may be used in combination with strip solar cells and/or single-axis tracking systems. That is, in certain example embodiments, lenses in the lens array may be arranged so as to concentrate incident light onto respective strip solar cells, and the entire assembly may be connected to a single-axis tracking system that is programmed to follow the East-West movement of the sun. A low-iron glass may be used in connection with certain example embodiments. Such techniques may advantageously help to reduce cost per watt related, in part, to the potentially reduced amount of semiconductor material to be used for such example embodiments.