Abstract:
In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.
Abstract:
In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.
Abstract:
Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
Abstract:
Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
Abstract:
The invention includes methods of fabrication and apparatuses. In at least some embodiments of the applicants' invention, the methods include processes of: maskless selective deposition of non-layered structures, selective etching and/or deposition without use of a separate mask and/or lithography techniques, retaining selected portions of sacrificial material during removal (e.g. etching) of other portions of sacrificial material, depositing materials other than the structural and sacrificial materials, including more than one type of structural and/or sacrificial material, and fabrication of interlacing elements. Embodiments of the methods of the invention provide increased capabilities, properties, flexibility and in the fabrication of three-dimensional structures by electro-deposition or other techniques. In certain embodiments, the apparatuses of the invention include structures having non-layered elements, retained sacrificial materials, three or more different deposited materials, and interlaced elements.
Abstract:
Various embodiments of the invention are directed to formation of mesoscale or microscale devices using electrochemical fabrication techniques where structures are formed from a plurality of layers as opened structures which can be folded over or other otherwise combined to form structures of desired configuration. Each layer is formed from at least one structural material and at least one sacrificial material. The initial formation of open structures may facilitate release of the sacrificial material, ability to form fewer layers to complete a structure, ability to locate additional materials into the structure, ability to perform additional processing operations on regions exposed while the structure is open, and/or the ability to form completely encapsulated and possibly hollow structures.
Abstract:
Multilayer test probe structures are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments each probe structure may include a plurality of contact arms or contact tips that are used for contacting a specific pad or plurality of pads wherein the arms and/or tips are configured in such away so as to provide a scrubbing motion (e.g. a motion perpendicular to a primary relative movement motion between a probe carrier and the IC) as the probe element or array is made to contact an IC, or the like, and particularly when the motion between the probe or probes and the IC occurs primarily in a direction that is perpendicular to a plane of a surface of the IC. In some embodiments arrays of multiple probes are provided and even formed in desired relative position simultaneously.
Abstract:
Multilayer probe structures for testing semiconductor die are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments the structures may include generally helical shaped configurations, helical shape configurations with narrowing radius as the probe extends outward from a substrate, bellows-like configurations, and the like. In some embodiments arrays of multiple probes are provided.
Abstract:
Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.
Abstract:
Some embodiments of the invention are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that partially coats the surface of the probe. Other embodiments are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that completely coats the surface of each layer from which the probe is formed including interlayer regions. These first two groups of embodiments incorporate both the core material and the coating material during the formation of each layer. Still other embodiments are directed to the electrochemical fabrication of microprobe arrays that are partially encapsulated by a dielectric material during a post layer formation coating process. In even further embodiments, the electrochemical fabrication of microprobes from two or more materials may occur by incorporating a coating material around each layer of the structure without locating the coating material in inter-layer regions.