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公开(公告)号：US20230183856A1
公开(公告)日：2023-06-15
申请号：US18097559
申请日：2023-01-17
申请人： ASM IP Holding B.V.
IPC分类号： C23C16/04 , H01L21/033 , C23C16/448 , C23C16/455 , C23C16/44 , C23C16/46 , C23C16/52 , G03F7/20 , H01L21/02
CPC分类号： C23C16/045 , H01L21/0337 , C23C16/4485 , C23C16/45523 , C23C16/4412 , C23C16/46 , H01L21/0332 , C23C16/4408 , C23C16/45561 , C23C16/45527 , C23C16/45544 , C23C16/52 , G03F7/2004 , H01L21/02205 , H01L21/0228 , H01L21/0273
摘要： Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:
a reaction chamber constructed and arranged to accommodate at least one substrate;
a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated;
a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated;
a removal flow path to allow removal of gas from the reaction chamber;
a removal flow controller to create a gas flow in the reaction chamber to the removal flow path
when the removal flow controller is activated; and,
a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.-
公开(公告)号：US11970766B2
公开(公告)日：2024-04-30
申请号：US18097559
申请日：2023-01-17
申请人： ASM IP Holding B.V.
IPC分类号： C23C16/04 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/52 , G03F7/20 , H01L21/02 , H01L21/027 , H01L21/033
CPC分类号： C23C16/045 , C23C16/4408 , C23C16/4412 , C23C16/4485 , C23C16/45523 , C23C16/45527 , C23C16/45544 , C23C16/45561 , C23C16/46 , C23C16/52 , G03F7/2004 , H01L21/02205 , H01L21/0228 , H01L21/0332 , H01L21/0337 , H01L21/0273
摘要： Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:
a reaction chamber constructed and arranged to accommodate at least one substrate;
a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated;
a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated;
a removal flow path to allow removal of gas from the reaction chamber;
a removal flow controller to create a gas flow in the reaction chamber to the removal flow path
when the removal flow controller is activated; and,
a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.-
公开(公告)号：US20220208542A1
公开(公告)日：2022-06-30
申请号：US17470177
申请日：2021-09-09
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
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4.发明公开公开(公告)号：US20240084446A1
公开(公告)日：2024-03-14
申请号：US18465787
申请日：2023-09-12
申请人： ASM IP Holding, B.V.
发明人： Iordan Iordanov , Christiaan Werkhoven , Loke Yuen Wong , Ivo Johannes Raaijmakers , Osama Khalil
IPC分类号： C23C16/40 , C23C16/32 , C23C16/34 , C23C16/455 , C23C16/458
CPC分类号： C23C16/40 , C23C16/325 , C23C16/34 , C23C16/45553 , C23C16/458
摘要： A reaction chamber component for use in a deposition apparatus for depositing a layer of a first material on a substrate is provided. The component may have a base material being partially coated with a liner of the first material. The component may have a protective layer of a second material different than the first material on top of the liner of the first material to protect the component. This may be useful during a removal process for removing a parasitic coating of the same first material deposited during use of the reaction chamber component.
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公开(公告)号：US11094535B2
公开(公告)日：2021-08-17
申请号：US15892728
申请日：2018-02-09
申请人： ASM IP HOLDING B.V.
发明人： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC分类号： H01L21/02 , H01L21/311 , H01L21/56 , H01L21/67 , H01L21/768 , H01L23/31 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/32 , H01L21/027 , H01L21/321 , H01L21/3105
摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
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公开(公告)号：US20180233350A1
公开(公告)日：2018-08-16
申请号：US15892728
申请日：2018-02-09
申请人： ASM IP HOLDING B.V.
发明人： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC分类号： H01L21/02 , H01L21/311 , H01L21/56 , H01L21/768 , H01L21/67 , H01L23/528 , H01L23/532 , H01L23/522 , H01L23/31
CPC分类号： H01L21/0228 , H01L21/02118 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0272 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/56 , H01L21/67069 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L21/76877 , H01L23/3171 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/53295
摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
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公开(公告)号：US20240175130A1
公开(公告)日：2024-05-30
申请号：US18523021
申请日：2023-11-29
申请人： ASM IP Holding B.V.
IPC分类号： C23C16/455 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/45546 , C23C16/4412 , C23C16/45553 , C23C16/45565 , H01L21/67098 , H01L21/67201 , H01L21/67248 , H01L21/67742
摘要： Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.
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公开(公告)号：US20240047197A1
公开(公告)日：2024-02-08
申请号：US18491428
申请日：2023-10-20
申请人： ASM IP Holding B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami J. Pore
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
CPC分类号： H01L21/0228 , H01L21/02669 , H01L21/324 , H01L21/67213 , H01L21/02315 , H01L21/02068 , H01L21/02178 , H01L21/02118
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
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公开(公告)号：US11830732B2
公开(公告)日：2023-11-28
申请号：US17470177
申请日：2021-09-09
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami Pore
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
CPC分类号： H01L21/0228 , H01L21/02068 , H01L21/02118 , H01L21/02178 , H01L21/02315 , H01L21/02669 , H01L21/324 , H01L21/67213
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
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公开(公告)号：US20210013037A1
公开(公告)日：2021-01-14
申请号：US16922520
申请日：2020-07-07
申请人： ASM IP Holding B.V.
发明人： Yiting Sun , David de Roest , Daniele Piumi , Ivo Johannes Raaijmakers , BokHeon Kim , Timothee Blanquart , Yoann Tomczak
IPC分类号： H01L21/033 , H01L21/311 , G03F7/20 , G03F7/38
摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.
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