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公开(公告)号：US11094535B2
公开(公告)日：2021-08-17
申请号：US15892728
申请日：2018-02-09
申请人： ASM IP HOLDING B.V.
发明人： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC分类号： H01L21/02 , H01L21/311 , H01L21/56 , H01L21/67 , H01L21/768 , H01L23/31 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/32 , H01L21/027 , H01L21/321 , H01L21/3105
摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
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公开(公告)号：US20180233350A1
公开(公告)日：2018-08-16
申请号：US15892728
申请日：2018-02-09
申请人： ASM IP HOLDING B.V.
发明人： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC分类号： H01L21/02 , H01L21/311 , H01L21/56 , H01L21/768 , H01L21/67 , H01L23/528 , H01L23/532 , H01L23/522 , H01L23/31
CPC分类号： H01L21/0228 , H01L21/02118 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0272 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/56 , H01L21/67069 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L21/76877 , H01L23/3171 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/53295
摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
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公开(公告)号：US11965238B2
公开(公告)日：2024-04-23
申请号：US16836151
申请日：2020-03-31
申请人： ASM IP Holding B.V.
IPC分类号： C23C16/04 , C23C16/40 , C23C16/455
CPC分类号： C23C16/04 , C23C16/403 , C23C16/45525
摘要： Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.
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公开(公告)号：US20220208542A1
公开(公告)日：2022-06-30
申请号：US17470177
申请日：2021-09-09
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
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公开(公告)号：US20220181163A1
公开(公告)日：2022-06-09
申请号：US17457764
申请日：2021-12-06
申请人： ASM IP HOLDING B.V.
发明人： Andrea Illiberi , Varun Sharma , Michael Givens , Marko Tuominen , Shaoren Deng
IPC分类号： H01L21/311 , H01L21/02 , C23C16/04 , C23C16/455 , C23C16/46 , C23C16/56
摘要： The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.
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公开(公告)号：US20200325573A1
公开(公告)日：2020-10-15
申请号：US16836151
申请日：2020-03-31
申请人： ASM IP Holding B.V.
IPC分类号： C23C16/04 , C23C16/40 , C23C16/455
摘要： Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.
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公开(公告)号：US20240047197A1
公开(公告)日：2024-02-08
申请号：US18491428
申请日：2023-10-20
申请人： ASM IP Holding B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami J. Pore
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
CPC分类号： H01L21/0228 , H01L21/02669 , H01L21/324 , H01L21/67213 , H01L21/02315 , H01L21/02068 , H01L21/02178 , H01L21/02118
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
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公开(公告)号：US11830732B2
公开(公告)日：2023-11-28
申请号：US17470177
申请日：2021-09-09
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami Pore
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
CPC分类号： H01L21/0228 , H01L21/02068 , H01L21/02118 , H01L21/02178 , H01L21/02315 , H01L21/02669 , H01L21/324 , H01L21/67213
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
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公开(公告)号：US20230377877A1
公开(公告)日：2023-11-23
申请号：US18319933
申请日：2023-05-18
申请人： ASM IP Holding, B.V.
发明人： Alessandra Leonhardt , Matthew Surman , Perttu Sippola , Ranjith Karuparambil Ramachandran , Charles Dezelah , Michael Givens , Andrea Illiberi , Tatiana Ivanova , Leo Lukose , Lorenzo Bottiglieri , Suvidyakumar Vinod Homkar , Vivek Koladi Mootheri
IPC分类号： H01L21/02 , C23C16/40 , C23C16/56 , C23C16/455
CPC分类号： H01L21/0228 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/02318 , C23C16/405 , C23C16/56 , C23C16/45527 , C23C16/45553 , H01L29/0673
摘要： Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.
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公开(公告)号：US11643720B2
公开(公告)日：2023-05-09
申请号：US17216249
申请日：2021-03-29
申请人： ASM IP Holding B.V.
发明人： Andrea Illiberi , Giuseppe Alessio Verni , Shaoren Deng , Daniele Chiappe , Eva Tois , Marko Tuominen , Michael Givens
IPC分类号： C23C16/40 , C23C16/455 , B01J31/12
CPC分类号： C23C16/401 , B01J31/122 , C23C16/45534 , C23C16/45553
摘要： Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.
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