公开(公告)号：US20200176677A1

公开(公告)日：2020-06-04

申请号：US16725907

申请日：2019-12-23

Applicant: Arm Limited

Inventor： Kimberly Gay Reid ,  Lucian Shifren

IPC: H01L49/00 ,  H01L45/00 ,  C23C16/34 ,  C23C16/30 ,  C23C16/56

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.

公开(公告)号：US10593880B2

公开(公告)日：2020-03-17

申请号：US16261413

申请日：2019-01-29

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L45/00 ,  H01L49/00 ,  H01L49/02

Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.

公开(公告)号：US20200013954A1

公开(公告)日：2020-01-09

申请号：US16572521

申请日：2019-09-16

Applicant: Arm Limited

Inventor： Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Christopher Randolph McWilliams

IPC: H01L45/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

公开(公告)号：US09859003B1

公开(公告)日：2018-01-02

申请号：US15334747

申请日：2016-10-26

Applicant: ARM Limited

Inventor： Shidhartha Das ,  Andreas Hansson ,  Akshay Kumar ,  Piyush Agarwal ,  Azeez Jennudin Bhavnagarwala ,  Lucian Shifren

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2207/2263 ,  G11C2213/31

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

公开(公告)号：US10763433B2

公开(公告)日：2020-09-01

申请号：US16284901

申请日：2019-02-25

Applicant: Arm Limited

Inventor： Lucian Shifren ,  Greg Yeric

IPC: G11C13/00 ,  H01L49/00 ,  H01L45/00 ,  G11C7/20

Abstract: Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.

公开(公告)号：US10734805B2

公开(公告)日：2020-08-04

申请号：US15381393

申请日：2016-12-16

Applicant: ARM Limited

Inventor： Bal S. Sandhu ,  Lucian Shifren ,  Glen Arnold Rosendale

IPC: H02H9/04 ,  H01L23/64 ,  H01L27/02 ,  H03K5/08

Abstract: A circuit is provided for limiting an applied voltage applied between a power line and an electrical ground. The circuit includes a transistive element connected between the power line and the electrical ground to provide a channel, where current flow through the channel is controlled by a control voltage provided to a control terminal of the transistive element. A first Correlated Electron Material (CEM) device having an impedance state is coupled between the power line and a first node, and a sensing circuit coupled between the first node and the control terminal of the transistive element. The sensing circuit is configured to detect a voltage drop across the CEM device and to provide the control voltage. The channel of the transistive element is opened when the detected voltage drop across the CEM device exceeds a threshold. The CEM device may contain a transition metal oxide (TMO), for example.

公开(公告)号：US10727408B2

公开(公告)日：2020-07-28

申请号：US16195765

申请日：2018-11-19

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Lucian Shifren

IPC: H01L21/20 ,  H01L27/02 ,  H01L49/00 ,  H01L45/00 ,  H01L27/24 ,  H01L27/08 ,  H01L29/93 ,  H01L29/861 ,  H01L29/24

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

公开(公告)号：US20200227515A1

公开(公告)日：2020-07-16

申请号：US16248496

申请日：2019-01-15

Applicant: Arm Limited

Inventor： Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Saurabh Vinayak Suryavanshi

IPC: H01L49/02 ,  H01L27/11502 ,  H01L29/78

Abstract: Briefly, embodiments of claimed subject matter relate to devices and methods for formation of ferroelectric materials utilizing transition metals, transition metal oxides, post transition metals, and/or post transition metal oxides, which may be doped with bismuth (Bi) in a concentration of between about 0.001% to about 25.0%. Alternatively, a dopant may include bismuth oxide (Bi2O3) or may include bismuth aluminum oxide ((BixAl1−x)2O3). In particular embodiments, such utilization of bismuth and/or related dopants may bring about stabilization of relatively thin ferroelectric devices.

公开(公告)号：US10700280B2

公开(公告)日：2020-06-30

申请号：US16459518

申请日：2019-07-01

Applicant: Arm Limited

Inventor： Glen Arnold Rosendale ,  Lucian Shifren

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.

公开(公告)号：US10580981B1

公开(公告)日：2020-03-03

申请号：US16057515

申请日：2018-08-07

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L45/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

Abstract: A method for the manufacture of a correlated electron material device which method comprises forming a conductive substrate and forming a layer of a correlated electron material on the conductive substrate, wherein the forming of the correlated electron material layer comprises: forming a layer of a metal rich transition or other metal compound; and annealing the layer of the metal rich transition or other metal compound in an atmosphere containing a gaseous precursor for an electron-back donating extrinsic ligand capable of occupying an anion vacancy within the transition or other metal compound; wherein the annealing provides that an anion vacancy within the transition or other metal compound is occupied by an electron back-donating extrinsic ligand; and wherein the annealing is carried out at a predetermined temperature and for a predetermined time whereby to activate electron back-donation from a transition or other metal cation to the electron back-donating extrinsic ligand occupying the anion vacancy.