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公开(公告)号：US20240151669A1
公开(公告)日：2024-05-09
申请号：US17984041
申请日：2022-11-09
发明人： Alex Goldenshtein , Dan Tuvia Fuchs
IPC分类号： G01N27/02
CPC分类号： G01N27/021 , G01N27/028
摘要： A method for evaluating an impedance related value of a structure of a sample, the method includes: (i) performing a first illumination iteration that includes charging the structure with an illumination iteration charge; (ii) performing a second illumination iteration that includes imaging the structure to provide an image of the structure; a value of the illumination iteration charge and a value of a time difference between step (i) and step (ii) are determined to introduce a dependency between an impedance of the structure and the image of the structure; wherein steps (i) and (ii) are executed using an electron beam, and (iii) determining the impedance related value of the structure based on the image of the structure. There may be three or more values of the impedance related value.
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公开(公告)号：US09366954B2
公开(公告)日：2016-06-14
申请号：US13948975
申请日：2013-07-23
CPC分类号： G03F1/86 , G03F1/62 , G21K1/062 , H01J37/28 , H01J2237/164 , H01J2237/2002 , H01J2237/244 , H01J2237/2449 , H01J2237/2809 , H01J2237/2817
摘要： A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.
摘要翻译： 一种用于评估光刻掩模的系统和方法，该系统可以包括：（a）用于将一次电子引导到位于电子光学器件和光刻掩模之间的防护薄膜的电子光学器件; 其中所述一次电子显示出允许所述一次电子通过所述防护薄膜并撞击所述光刻掩模的能级; （b）至少一个检测器，用于检测检测到的发射电子并产生检测信号; 其中由于一次电子撞击在光刻掩模上而产生检测到的发射电子; 和（c）用于处理检测信号以提供关于光刻掩模的信息的处理器。
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公开(公告)号：US09673023B2
公开(公告)日：2017-06-06
申请号：US14710297
申请日：2015-05-12
发明人： Alex Goldenshtein
CPC分类号： H01J37/073 , H01J37/026 , H01J37/226 , H01J37/28 , H01J2237/0047 , H01J2237/04 , H01J2237/063 , H01J2237/2801 , H01J2237/2817
摘要： A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.
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4.发明申请INSPECTION OF A LITHOGRAPHIC MASK THAT IS PROTECTED BY A PELLICLE 有权检查由PELLICLE保护的LITHOGRAPHIC MASK公开(公告)号：US20150028203A1
公开(公告)日：2015-01-29
申请号：US13948975
申请日：2013-07-23
CPC分类号： G03F1/86 , G03F1/62 , G21K1/062 , H01J37/28 , H01J2237/164 , H01J2237/2002 , H01J2237/244 , H01J2237/2449 , H01J2237/2809 , H01J2237/2817
摘要： A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask
摘要翻译： 一种用于评估光刻掩模的系统和方法，该系统可以包括：（a）用于将一次电子引导到位于电子光学器件和光刻掩模之间的防护薄膜的电子光学器件; 其中所述一次电子表现出允许所述一次电子通过所述防护薄膜并撞击所述光刻掩模的能级; （b）至少一个检测器，用于检测检测到的发射电子并产生检测信号; 其中由于一次电子撞击在光刻掩模上而产生检测到的发射电子; 和（c）用于处理检测信号以提供关于光刻掩模的信息的处理器
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公开(公告)号：US10153126B2
公开(公告)日：2018-12-11
申请号：US15595214
申请日：2017-05-15
发明人： Alex Goldenshtein
IPC分类号： H01J37/073 , H01J37/22 , H01J37/28 , H01J37/02
摘要： A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.
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6.发明授权公开(公告)号：US10168614B1
公开(公告)日：2019-01-01
申请号：US15643271
申请日：2017-07-06
申请人： APPLIED MATERIALS ISRAEL LTD. , ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Alex Goldenshtein , Stefan Lanio
IPC分类号： H01J37/28 , H01J37/22 , G03F1/86 , H01J37/304 , G03F9/00 , H01J37/30 , H01J37/317
摘要： A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.
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7.发明申请公开(公告)号：US20180364564A1
公开(公告)日：2018-12-20
申请号：US15643271
申请日：2017-07-06
申请人： APPLIED MATERIALS ISRAEL LTD. , ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Alex Goldenshtein , Stefan Lanio
IPC分类号： G03F1/86 , H01J37/304 , G03F9/00 , H01J37/30 , H01J37/317 , H01J37/22
CPC分类号： G03F1/86 , G03F9/7073 , H01J37/222 , H01J37/3007 , H01J37/3045 , H01J37/3174 , H01J2237/063 , H01J2237/30433
摘要： A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.
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公开(公告)号：US10156785B2
公开(公告)日：2018-12-18
申请号：US15177226
申请日：2016-06-08
摘要： A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.
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公开(公告)号：US20160282714A1
公开(公告)日：2016-09-29
申请号：US15177226
申请日：2016-06-08
CPC分类号： G03F1/86 , G03F1/62 , G21K1/062 , H01J37/28 , H01J2237/164 , H01J2237/2002 , H01J2237/244 , H01J2237/2449 , H01J2237/2809 , H01J2237/2817
摘要： A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask
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