MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES
    1.
    发明申请
    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES 有权
    管理衬底退火中的热预算

    公开(公告)号:US20140209583A1

    公开(公告)日:2014-07-31

    申请号:US14229238

    申请日:2014-03-28

    Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要,预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源,例如激光器,加热灯,白光灯或闪光灯。

    METHODS FOR FORMING LOW RESISTIVITY INTERCONNECTS
    2.
    发明申请
    METHODS FOR FORMING LOW RESISTIVITY INTERCONNECTS 有权
    形成低电阻互连的方法

    公开(公告)号:US20160372371A1

    公开(公告)日:2016-12-22

    申请号:US15189768

    申请日:2016-06-22

    CPC classification number: H01L21/28518 H01L23/485 H01L23/53209 H01L23/53219

    Abstract: Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.

    Abstract translation: 本文所述的实施方案一般涉及形成硅化物材料的方法。 根据本文所述的实施方案形成的硅化物材料可以用作接触和/或互连结构,并且可以提供优于常规硅化物形成方法的优点。 在一个实施例中,一个或多个过渡金属和铝层可以沉积在含硅衬底上,并且过渡金属层可以沉积在一个或多个过渡金属和铝层上。 可以进行退火工艺以形成金属硅化物材料。

    THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION
    3.
    发明申请
    THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
    具有改善气体流量分布的热反应器

    公开(公告)号:US20140079376A1

    公开(公告)日:2014-03-20

    申请号:US14088013

    申请日:2013-11-22

    CPC classification number: H01L21/67115 F27D7/06 H01L21/67017 H01L21/67098

    Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

    Abstract translation: 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置,其包括限定处理体积的室主体,设置在处理容积中的衬底支撑件,其中衬底支撑件构造成支撑和旋转衬底;气体入口组件, 室主体的入口并且被配置为向处理容积提供第一气流,以及联接到室主体的出口的排气组件,其中气体入口组件和排气组件设置在室主体的相对侧上 ,并且排气组件限定了被配置为延长处理量的排气量。

    PROCESSING MULTILAYER SEMICONDUCTORS WITH MULTIPLE HEAT SOURCES
    4.
    发明申请
    PROCESSING MULTILAYER SEMICONDUCTORS WITH MULTIPLE HEAT SOURCES 审中-公开
    用多个热源处理多层半导体

    公开(公告)号:US20140003800A1

    公开(公告)日:2014-01-02

    申请号:US14014947

    申请日:2013-08-30

    CPC classification number: H01L21/02 H01L21/268 H01L21/324 H01L21/67115

    Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

    Abstract translation: 一种用于快速热退火的方法和装置,包括固定到室的盖上的多个灯,其提供至少一个波长的光,延伸到腔室中的激光源,位于腔室的基座内的基底支撑件, 固定到基板支撑件的环,以及与盖和基座的底部连通的气体分配组件。 一种用于快速热退火的方法和装置,包括多个灯,其包括灯的区域控制和固定到所述室的盖的冷却气体分配系统,具有延伸穿过所述室的基部的磁悬浮的加热衬底支撑件, 固定到基板支撑件的环,以及与盖和基座的底部连通的气体分配组件。

    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES
    5.
    发明申请
    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES 有权
    管理衬底退火中的热预算

    公开(公告)号:US20150357215A1

    公开(公告)日:2015-12-10

    申请号:US14832564

    申请日:2015-08-21

    Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要,预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源,例如激光器,加热灯,白光灯或闪光灯。

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