公开(公告)号：US20140003800A1

公开(公告)日：2014-01-02

申请号：US14014947

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Sundar RAMAMURTHY ,  Andreas G. HEGEDUS ,  Randhir P.S. THAKUR

IPC: H01L21/02

CPC classification number: H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

Abstract translation: 一种用于快速热退火的方法和装置，包括固定到室的盖上的多个灯，其提供至少一个波长的光，延伸到腔室中的激光源，位于腔室的基座内的基底支撑件， 固定到基板支撑件的环，以及与盖和基座的底部连通的气体分配组件。 一种用于快速热退火的方法和装置，包括多个灯，其包括灯的区域控制和固定到所述室的盖的冷却气体分配系统，具有延伸穿过所述室的基部的磁悬浮的加热衬底支撑件， 固定到基板支撑件的环，以及与盖和基座的底部连通的气体分配组件。

公开(公告)号：US20160372351A1

公开(公告)日：2016-12-22

申请号：US15188103

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. SINGH ,  Deepak JADHAV ,  Ashutosh AGARWAL ,  Ashish GOEL ,  Vijay PARIHAR ,  Er-Xuan PING ,  Randhir P.S. THAKUR

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/475 ,  H01L21/441 ,  H01L21/02 ,  H01L21/4757

CPC classification number: C23C16/45525 ,  C23C14/56 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02381 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

Abstract: Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

Abstract translation: 本文所述的实施例提供了利用微波源的远程等离子体系统。 另外，公开了利用微波辅助生成自由基的具有大面积均匀性的二维过渡金属硫族化物的生成和沉积技术。 可以使用微波源远程产生等离子体。 还公开了一种配置成沉积2D过渡金属硫属化物的处理平台。