知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.01 seconds)

    RECURSIVE PUMPING FOR SYMMETRICAL GAS EXHAUST TO CONTROL CRITICAL DIMENSION UNIFORMITY IN PLASMA REACTORS
    2.
    发明申请
    RECURSIVE PUMPING FOR SYMMETRICAL GAS EXHAUST TO CONTROL CRITICAL DIMENSION UNIFORMITY IN PLASMA REACTORS 有权
    用于对称气体排放以控制等离子体反应器中关键尺寸均匀性的循环泵

    公开(公告)号：US20150041061A1

    公开(公告)日：2015-02-12

    申请号：US14452228

    申请日：2014-08-05

    Applicant: Applied Materials, Inc.

    Inventor： Sergio Fukuda SHOJI ,  Hamid NOORBAKHSH ,  Jong Mun KIM ,  Jason Della ROSA ,  Ajit BALAKRISHNA

    IPC: C23C16/455 ,  H01L21/67 ,  F15D1/02 ,  H01J37/32

    CPC classification number: C23C16/45591 ,  C23C16/4412 ,  F15D1/025 ,  H01J37/32633 ,  H01J37/32834

    Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.

    Abstract translation: 本发明的实施例提供了用于在衬底处理期间减少不均匀性和/或偏斜的装置和方法。 本发明的一个实施例提供了一种流量均衡器组件，用于在处理室中的真空口和处理容积之间设置。 流量均衡组件包括具有至少一个第一开口的第一板和具有两个或更多个第二开口的第二板。 第一和第二板限定其间的流动再分布体积，并且至少一个第一开口和两个或更多个第二开口交错。

    SHOWERHEAD WITH REDUCED BACKSIDE PLASMA IGNITION
    3.
    发明申请
    SHOWERHEAD WITH REDUCED BACKSIDE PLASMA IGNITION 审中-公开

    公开(公告)号：US20190271082A1

    公开(公告)日：2019-09-05

    申请号：US16418994

    申请日：2019-05-21

    Applicant: Applied Materials, Inc.

    Inventor： Haitao WANG ,  Hamid NOORBAKHSH ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Kartik RAMASWAMY ,  Roland SMITH ,  Brad L. MAYS

    IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32

    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

    METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES
    4.
    发明申请
    METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES 有权
    使用同步RF脉冲蚀刻材料的方法

    公开(公告)号：US20150072530A1

    公开(公告)日：2015-03-12

    申请号：US14020773

    申请日：2013-09-06

    Applicant: Applied Materials, Inc.

    Inventor： Jong Mun KIM ,  Daisuke SHIMIZU ,  Katsumasa KAWASAKI ,  Sergio Fukuda SHOJI

    IPC: H01L21/3065 ,  H01L21/311

    CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/31116

    Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

    Abstract translation: 本发明的实施例提供了使用同步RF脉冲来蚀刻材料层的方法。 在一个实施例中，一种方法包括将气体混合物提供到处理室中，在第一时间点将第一RF源功率施加到处理室以在气体混合物中形成等离子体，在第二时间施加第一RF偏置功率 指向处理室，以对基板执行蚀刻处理，在第三时间点关闭第一RF偏置功率，同时从第一时间点到第二时间点和第三时间点持续保持第一RF源功率接通，以及 在第四时间点关闭第一RF源功率，同时从第一时间点到第二，第三和第四时间点连续地将气体混合物提供到处理室。

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
    5.
    发明申请
    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 有权

    公开(公告)号：US20220130642A1

    公开(公告)日：2022-04-28

    申请号：US17078728

    申请日：2020-10-23

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yue GUO ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Jorge ZANINOVICH ,  Smbat KARTASHYAN

    IPC: H01J37/32 ,  H01J37/244 ,  G01R25/02

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency.

    SHOWERHEAD WITH REDUCED BACKSIDE PLASMA IGNITION
    6.
    发明申请
    SHOWERHEAD WITH REDUCED BACKSIDE PLASMA IGNITION 审中-公开

    公开(公告)号：US20170101713A1

    公开(公告)日：2017-04-13

    申请号：US15219758

    申请日：2016-07-26

    Applicant: Applied Materials, Inc.

    Inventor： Haitao WANG ,  Hamid NOORBAKHSH ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Kartik RAMASWAMY ,  Roland SMITH ,  Brad L. MAYS

    IPC: C23C16/455

    CPC classification number: C23C16/45565 ,  C23C16/4401 ,  H01J37/3244

    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

Patent Agency Ranking