公开(公告)号：US20250069921A1

公开(公告)日：2025-02-27

申请号：US18943632

申请日：2024-11-11

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Yogananda SARODE ,  Xue CHANG ,  Kartik RAMASWAMY

IPC: H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  H10N10/13

Abstract: Methods and systems for in-situ temperature control are provided. The system includes a temperature-sensing dis. The temperature-sensing disc has a body, a front surface and a back surface opposing the front surface. One or more cameras are positioned on the front surface, the back surface, or both the front surface and the back surface. The one or more cameras are configured for performing infrared-based imaging of a surface of a processing chamber.

公开(公告)号：US20240290578A1

公开(公告)日：2024-08-29

申请号：US18115537

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Yang YANG ,  Nicolas J. BRIGHT

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/321

Abstract: A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.

公开(公告)号：US20240234087A1

公开(公告)日：2024-07-11

申请号：US18612757

申请日：2024-03-21

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO ,  Fernando SILVEIRA

IPC: H01J37/32 ,  H03K17/687

CPC classification number: H01J37/32091 ,  H03K17/687 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

公开(公告)号：US20240177968A1

公开(公告)日：2024-05-30

申请号：US18059658

申请日：2022-11-29

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yue GUO ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32128

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for processing a substrate in a plasma processing system. The apparatus includes a pulse voltage (PV) waveform generator comprising at least one synchronization signal and a plurality of pulsers to provide a plurality of TTL inputs. The PV waveform generator generates a waveform containing pulses or bursts which contain micropulses corresponding to the plurality of TTL input signals and the at least one synchronization signal. The method includes receiving a first TTL input signal and a synchronization waveform signal from a controller, delivering a first micropulse to an electrode assembly after receiving the first TTL input signal and synchronization signal, and delivering a second micropulse to the electrode assembly after receiving the second TTL input signal and the synchronization signal.

公开(公告)号：US20240118328A1

公开(公告)日：2024-04-11

申请号：US17960666

申请日：2022-10-05

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Fernando SILVEIRA ,  A N M Wasekul AZAD

IPC: G01R29/08

CPC classification number: G01R29/0885

Abstract: Embodiments of the disclosure include an electric field measurement system that includes a first light source, a first light sensor configured to receive electromagnetic energy transmitted from the first light source, an electro-optic sensor, and a controller. The electro-optic sensor may include a package comprising a first electro-optic crystal disposed within a body; and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the first light sensor from the at least one optical fiber. The controller is configured to generate a command signal based on a signal received from the first light sensor.

公开(公告)号：US20230335376A1

公开(公告)日：2023-10-19

申请号：US17723722

申请日：2022-04-19

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Fernando SILVEIRA ,  Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Imad YOUSIF

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/06375 ,  H01J2237/2007

Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.

公开(公告)号：US20230197495A1

公开(公告)日：2023-06-22

申请号：US17553305

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： James David CARDUCCI ,  Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  Silverst Antony RODRIGUES ,  Yang YANG

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01L21/68742 ,  H01L21/68735 ,  H01J37/32724 ,  H01J37/32642 ,  H01J37/32834 ,  H01J2237/334

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.

公开(公告)号：US20230187250A1

公开(公告)日：2023-06-15

申请号：US17550932

申请日：2021-12-14

Applicant: Applied Materials, Inc.

Inventor： Arvinder S. CHADHA ,  Kartik RAMASWAMY

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/6719

Abstract: Electrostatic chucks for use in substrate processing chambers are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes: a dielectric plate having an electrode disposed therein, the dielectric plate further including a central portion and a peripheral portion, wherein the peripheral portion comprises at least one of: an outer sidewall having at least one asperity; a porosity greater than a porosity of the central portion of the dielectric plate; or one or more coatings made of a material different than a material of the central portion.

公开(公告)号：US20220406581A1

公开(公告)日：2022-12-22

申请号：US17351355

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Methods for detecting arcs in power delivery systems for plasma process chambers leverage visible arc detection sensors to facilitate in locating the arc and shutting down a power source associated with arc location. In some embodiments, the method includes receiving an arc indication from an arc detection sensor operating in a visible light spectrum where the at least one arc detection sensor is positioned in an assembly of a power delivery system for a plasma process chamber, determining a location of the arc indication by an arc detection controller of the plasma process chamber, and activating a safety interlock signal to the power source of the power delivery system of the plasma process chamber when the at least one arc indication exceeds a threshold value. The safety interlock signal controls a power status of the power source and activating the safety interlock signal removes power source power.

公开(公告)号：US20220399186A1

公开(公告)日：2022-12-15

申请号：US17352165

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.