BOWED SUBSTRATE CLAMPING METHOD, APPARATUS, AND SYSTEM

    公开(公告)号:US20240162066A1

    公开(公告)日:2024-05-16

    申请号:US17984357

    申请日:2022-11-10

    CPC classification number: H01L21/67288 H01L21/6831 H01J37/32715

    Abstract: Methods and apparatus for clamping a substrate comprise i. placing a substrate on a clamping surface of a substrate support having a plurality of electrodes spaced from one another including a first electrode and a second electrode; ii. measuring substrate bow of the substrate; iii. determining, based on the measured substrate bow, a first voltage to be applied to the first electrode and a second voltage to be applied to the second electrode, wherein the first voltage is an AC voltage and the second voltage is an AC or a DC voltage; and iv. applying the first voltage to the first electrode and the second voltage to the second electrode to clamp the substrate to the substrate support.

    Bowed Substrate Clamping Method, Apparatus, and System

    公开(公告)号:US20250149361A1

    公开(公告)日:2025-05-08

    申请号:US19013048

    申请日:2025-01-08

    Abstract: Methods and apparatus for clamping a substrate comprise i. placing a substrate on a clamping surface of a substrate support having a plurality of electrodes spaced from one another including a first electrode and a second electrode; ii. measuring substrate bow of the substrate; iii. determining, based on the measured substrate bow, a first voltage to be applied to the first electrode and a second voltage to be applied to the second electrode, wherein the first voltage is an AC voltage and the second voltage is an AC or a DC voltage; and iv. applying the first voltage to the first electrode and the second voltage to the second electrode to clamp the substrate to the substrate support.

    WAFER TO BASEPLATE ARC PREVENTION USING TEXTURED DIELECTRIC

    公开(公告)号:US20230187250A1

    公开(公告)日:2023-06-15

    申请号:US17550932

    申请日:2021-12-14

    CPC classification number: H01L21/6833 H01L21/6719

    Abstract: Electrostatic chucks for use in substrate processing chambers are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes: a dielectric plate having an electrode disposed therein, the dielectric plate further including a central portion and a peripheral portion, wherein the peripheral portion comprises at least one of: an outer sidewall having at least one asperity; a porosity greater than a porosity of the central portion of the dielectric plate; or one or more coatings made of a material different than a material of the central portion.

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