公开(公告)号：US20150041061A1

公开(公告)日：2015-02-12

申请号：US14452228

申请日：2014-08-05

Applicant: Applied Materials, Inc.

Inventor： Sergio Fukuda SHOJI ,  Hamid NOORBAKHSH ,  Jong Mun KIM ,  Jason Della ROSA ,  Ajit BALAKRISHNA

IPC: C23C16/455 ,  H01L21/67 ,  F15D1/02 ,  H01J37/32

CPC classification number: C23C16/45591 ,  C23C16/4412 ,  F15D1/025 ,  H01J37/32633 ,  H01J37/32834

Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.

Abstract translation: 本发明的实施例提供了用于在衬底处理期间减少不均匀性和/或偏斜的装置和方法。 本发明的一个实施例提供了一种流量均衡器组件，用于在处理室中的真空口和处理容积之间设置。 流量均衡组件包括具有至少一个第一开口的第一板和具有两个或更多个第二开口的第二板。 第一和第二板限定其间的流动再分布体积，并且至少一个第一开口和两个或更多个第二开口交错。

公开(公告)号：US20150001180A1

公开(公告)日：2015-01-01

申请号：US14020774

申请日：2013-09-06

Applicant: Applied Materials, Inc.

Inventor： Kenny Linh DOAN ,  Jason Della ROSA ,  Hamid NOORBAKHSH ,  Jong Mun KIM

IPC: H01J37/32 ,  B32B18/00

CPC classification number: H01J37/32642 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32651

Abstract: A tunable ring assembly, a plasma processing chamber having a tunable ring assembly and method for tuning a plasma process is provided. In one embodiment, a tunable ring assembly includes an outer ceramic ring having an exposed top surface and a bottom surface and an inner silicon ring configured to mate with the outer ceramic ring to define an overlap region, the inner silicon ring having an inner surface, a top surface and a notch formed between the inner surface and the top surface, the inner surface defining an inner diameter of the ring assembly, the notch is sized to accept an edge of a substrate, an outer portion of the top surface of the inner silicon ring configured to contact in the overlap region and underlying an inner portion of the bottom surface of the outer ceramic ring.

Abstract translation: 提供了一种可调环组件，具有可调环组件的等离子体处理室和用于调谐等离子体工艺的方法。 在一个实施例中，可调谐环组件包括具有暴露的顶表面和底表面的外陶瓷环和被配置为与外陶瓷环配合以限定重叠区域的内硅环，内硅环具有内表面， 在所述内表面和所述顶表面之间形成的顶表面和凹口，所述内表面限定所述环组件的内径，所述凹口的尺寸设置成接受基底的边缘，所述内表面的顶表面的外部 硅环构造成在重叠区域中接触并且位于外陶瓷环的底表面的内部下方。