公开(公告)号：US20180096834A1

公开(公告)日：2018-04-05

申请号：US15833728

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： David KNAPP ,  Simon HUANG ,  Jeffrey W. ANTHIS ,  Philip Alan KRAUS ,  David THOMPSON

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/0332 ,  B82Y30/00 ,  C08K3/04 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/0206 ,  H01L21/0335 ,  H01L21/0337

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20240186181A1

公开(公告)日：2024-06-06

申请号：US18074335

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Ge QU ,  Qihao ZHU ,  Zheng JU ,  Yang ZHOU ,  Jiajie CEN ,  Feng Q. LIU ,  Zhiyuan WU ,  Feng CHEN ,  Kevin KASHEFI ,  Xianmin TANG ,  Jeffrey W. ANTHIS ,  Mark Joseph SALY

IPC: H01L21/768 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

公开(公告)号：US20250125157A1

公开(公告)日：2025-04-17

申请号：US18634659

申请日：2024-04-12

Applicant: Applied Materials, Inc.

Inventor： Michael HAVERTY ,  Avgerinos V. GELATOS ,  Gaurav THAREJA ,  Lauren Mary BAGBY ,  Lakmal C. KALUTARAGE ,  Jeffrey W. ANTHIS ,  Archana KUMAR

IPC: H01L21/3205 ,  H01L21/48

Abstract: The methods of the present disclosure enable formation of highly conductive contacts that facilitate in increasing the device speed and lowering the operating voltages of semiconductor devices such as, but not limited to, metal-on-semiconductor (MOS) transistors and the like. In one embodiment, the methods create the optimal contacts, useful in N type or P type MOS devices, by forming metal-insulator-semiconductor (MIS) contact structure or a non-stoichiometric layer contact structure. It is noted that N type or P type contacts require different work function metals to achieve a low Schottky barrier height (SBH).