公开(公告)号：US20220242725A1

公开(公告)日：2022-08-04

申请号：US17617151

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Joseph R. JOHNSON ,  Roger QUON ,  Archana KUMAR ,  Ryan Scott SMITH ,  Jeremiah HEBDING ,  Raghav SREENIVASAN

IPC: B82B3/00 ,  B81C1/00 ,  B82Y15/00 ,  B82Y40/00

Abstract: Embodiments of the present disclosure provide methods of forming solid state dual pore sensors which may be used for biopolymer sequencing and dual pore sensors formed therefrom. In one embodiment, a method of forming a dual pore sensor includes providing a pattern in a surface of a substrate. Generally, the pattern features two fluid reservoirs separated by a divider wall. The method further includes depositing a layer of sacrificial material into the two fluid reservoirs, depositing a membrane layer, patterning two nanopores through the membrane layer, removing the sacrificial material from the two fluid reservoirs, and patterning one or more fluid ports and a common chamber.

公开(公告)号：US20250125157A1

公开(公告)日：2025-04-17

申请号：US18634659

申请日：2024-04-12

Applicant: Applied Materials, Inc.

Inventor： Michael HAVERTY ,  Avgerinos V. GELATOS ,  Gaurav THAREJA ,  Lauren Mary BAGBY ,  Lakmal C. KALUTARAGE ,  Jeffrey W. ANTHIS ,  Archana KUMAR

IPC: H01L21/3205 ,  H01L21/48

Abstract: The methods of the present disclosure enable formation of highly conductive contacts that facilitate in increasing the device speed and lowering the operating voltages of semiconductor devices such as, but not limited to, metal-on-semiconductor (MOS) transistors and the like. In one embodiment, the methods create the optimal contacts, useful in N type or P type MOS devices, by forming metal-insulator-semiconductor (MIS) contact structure or a non-stoichiometric layer contact structure. It is noted that N type or P type contacts require different work function metals to achieve a low Schottky barrier height (SBH).

公开(公告)号：US20220236250A1

公开(公告)日：2022-07-28

申请号：US17617153

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Joseph R. JOHNSON ,  Roger QUON ,  Archana KUMAR ,  Ryan Scott SMITH ,  Jeremiah HEBDING ,  Raghav SREENIVASAN

IPC: G01N33/487

Abstract: Embodiments of the present disclosure provide methods of forming solid state dual pore sensors which may be used for biopolymer sequencing and dual pore sensors formed therefrom. In one embodiment, a dual pore sensor features a substrate having a patterned surface comprising two recessed regions spaced apart by a divider wall and a membrane layer disposed on the patterned surface. The membrane layer, the divider wall, and one or more surfaces of each of the two recessed regions collectively define a first fluid reservoir and a second fluid reservoir. A first nanopore is disposed through a portion of the membrane layer disposed over the first fluid reservoir and a second nanopore is disposed through a portion of the membrane layer disposed over the second fluid reservoir. Herein, opposing surfaces of the divider wall are sloped to each form an angle of less than 90° with a respective reservoir facing surface of the membrane layer.